Thin film transistor using amorphous InGaZnO films as both channel and source/drain electrodes

Kyung Park, Ju Yun Choi, Hoo Jeong Lee, Jang Yeon Kwon, Hyoungsub Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

For the fabrication of a low-cost and transparent amorphous InGaZnO (a-IGZO) thin film transistor (TFT), the possibility of using semiconducting and conducting, a-IGZO films as the channel and source/drain (S/D) electrode layers, respectively, was investigated, as was their effect on the device performance. Although the a-IGZO S/D electrodes' transistor performance was somewhat degraded, possibly due to the ex-situ integration process, acceptable TFT characteristics and transparency were obtained for the next-generation, transparent active matrix displays. The post-fabrication annealing ambient significantly affected the electrical properties of the a-IGZO S/D and channel layers, as the carrier concentration exhibited a close dependency on the amount of oxygen in the annealing ambient.

Original languageEnglish
Article number096504
JournalJapanese journal of applied physics
Volume50
Issue number9 PART 1
DOIs
Publication statusPublished - 2011 Sep 1

Fingerprint

Amorphous films
Thin film transistors
transistors
Annealing
Fabrication
Electrodes
electrodes
thin films
Transparency
Carrier concentration
Transistors
fabrication
Electric properties
annealing
Display devices
Oxygen
electrical properties
Costs
conduction
oxygen

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Park, Kyung ; Choi, Ju Yun ; Lee, Hoo Jeong ; Kwon, Jang Yeon ; Kim, Hyoungsub. / Thin film transistor using amorphous InGaZnO films as both channel and source/drain electrodes. In: Japanese journal of applied physics. 2011 ; Vol. 50, No. 9 PART 1.
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Thin film transistor using amorphous InGaZnO films as both channel and source/drain electrodes. / Park, Kyung; Choi, Ju Yun; Lee, Hoo Jeong; Kwon, Jang Yeon; Kim, Hyoungsub.

In: Japanese journal of applied physics, Vol. 50, No. 9 PART 1, 096504, 01.09.2011.

Research output: Contribution to journalArticle

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