Thin film transistor using amorphous InGaZnO films as both channel and source/drain electrodes

Kyung Park, Ju Yun Choi, Hoo Jeong Lee, Jang Yeon Kwon, Hyoungsub Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

For the fabrication of a low-cost and transparent amorphous InGaZnO (a-IGZO) thin film transistor (TFT), the possibility of using semiconducting and conducting, a-IGZO films as the channel and source/drain (S/D) electrode layers, respectively, was investigated, as was their effect on the device performance. Although the a-IGZO S/D electrodes' transistor performance was somewhat degraded, possibly due to the ex-situ integration process, acceptable TFT characteristics and transparency were obtained for the next-generation, transparent active matrix displays. The post-fabrication annealing ambient significantly affected the electrical properties of the a-IGZO S/D and channel layers, as the carrier concentration exhibited a close dependency on the amount of oxygen in the annealing ambient.

Original languageEnglish
Article number096504
JournalJapanese journal of applied physics
Volume50
Issue number9 PART 1
DOIs
Publication statusPublished - 2011 Sep

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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