Abstract
For the fabrication of a low-cost and transparent amorphous InGaZnO (a-IGZO) thin film transistor (TFT), the possibility of using semiconducting and conducting, a-IGZO films as the channel and source/drain (S/D) electrode layers, respectively, was investigated, as was their effect on the device performance. Although the a-IGZO S/D electrodes' transistor performance was somewhat degraded, possibly due to the ex-situ integration process, acceptable TFT characteristics and transparency were obtained for the next-generation, transparent active matrix displays. The post-fabrication annealing ambient significantly affected the electrical properties of the a-IGZO S/D and channel layers, as the carrier concentration exhibited a close dependency on the amount of oxygen in the annealing ambient.
| Original language | English |
|---|---|
| Article number | 096504 |
| Journal | Japanese journal of applied physics |
| Volume | 50 |
| Issue number | 9 PART 1 |
| DOIs | |
| Publication status | Published - 2011 Sep 1 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Thin film transistor using amorphous InGaZnO films as both channel and source/drain electrodes. / Park, Kyung; Choi, Ju Yun; Lee, Hoo Jeong; Kwon, Jang Yeon; Kim, Hyoungsub.
In: Japanese journal of applied physics, Vol. 50, No. 9 PART 1, 096504, 01.09.2011.Research output: Contribution to journal › Article
TY - JOUR
T1 - Thin film transistor using amorphous InGaZnO films as both channel and source/drain electrodes
AU - Park, Kyung
AU - Choi, Ju Yun
AU - Lee, Hoo Jeong
AU - Kwon, Jang Yeon
AU - Kim, Hyoungsub
PY - 2011/9/1
Y1 - 2011/9/1
N2 - For the fabrication of a low-cost and transparent amorphous InGaZnO (a-IGZO) thin film transistor (TFT), the possibility of using semiconducting and conducting, a-IGZO films as the channel and source/drain (S/D) electrode layers, respectively, was investigated, as was their effect on the device performance. Although the a-IGZO S/D electrodes' transistor performance was somewhat degraded, possibly due to the ex-situ integration process, acceptable TFT characteristics and transparency were obtained for the next-generation, transparent active matrix displays. The post-fabrication annealing ambient significantly affected the electrical properties of the a-IGZO S/D and channel layers, as the carrier concentration exhibited a close dependency on the amount of oxygen in the annealing ambient.
AB - For the fabrication of a low-cost and transparent amorphous InGaZnO (a-IGZO) thin film transistor (TFT), the possibility of using semiconducting and conducting, a-IGZO films as the channel and source/drain (S/D) electrode layers, respectively, was investigated, as was their effect on the device performance. Although the a-IGZO S/D electrodes' transistor performance was somewhat degraded, possibly due to the ex-situ integration process, acceptable TFT characteristics and transparency were obtained for the next-generation, transparent active matrix displays. The post-fabrication annealing ambient significantly affected the electrical properties of the a-IGZO S/D and channel layers, as the carrier concentration exhibited a close dependency on the amount of oxygen in the annealing ambient.
UR - http://www.scopus.com/inward/record.url?scp=80053005172&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=80053005172&partnerID=8YFLogxK
U2 - 10.1143/JJAP.50.096504
DO - 10.1143/JJAP.50.096504
M3 - Article
AN - SCOPUS:80053005172
VL - 50
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - 9 PART 1
M1 - 096504
ER -