Solution-based indium gallium zinc oxide (IGZO)/single-walled carbon nanotubes (SWNTs) blend have been used to fabricate the channel of thin film transistors (TFTs). The electrical characteristics of the fabricated devices were examined. We found a low leakage current and a higher on/off currents ratio for TFT with SWNTs compared to solution-based TFTs made without SWNTs. The saturation field effect mobility (μsat) of about 0.22 cm2/Vs, the current on/off ratio is ~ 105, the subthreshod swing is ~ 2.58 V/decade and the threshold voltage (Vth) is less than - 2.3 V. We demonstrated that the solution-based blend active layer provides the possibility of producing higher performance TFTs for low-cost large area electronic and flexible devices.
Bibliographical noteFunding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (No. R0A-2007-000-10044-0 (2007)).
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry