Thin film transistors by solution-based indium gallium zinc oxide/carbon nanotubes blend

Keun Woo Lee, Kon Yi Heo, Sang Hoon Oh, Abderrafia Moujoud, Gun Hee Kim, Hyun Jae Kim

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Solution-based indium gallium zinc oxide (IGZO)/single-walled carbon nanotubes (SWNTs) blend have been used to fabricate the channel of thin film transistors (TFTs). The electrical characteristics of the fabricated devices were examined. We found a low leakage current and a higher on/off currents ratio for TFT with SWNTs compared to solution-based TFTs made without SWNTs. The saturation field effect mobility (μsat) of about 0.22 cm2/Vs, the current on/off ratio is ~ 105, the subthreshod swing is ~ 2.58 V/decade and the threshold voltage (Vth) is less than - 2.3 V. We demonstrated that the solution-based blend active layer provides the possibility of producing higher performance TFTs for low-cost large area electronic and flexible devices.

Original languageEnglish
Pages (from-to)4011-4014
Number of pages4
JournalThin Solid Films
Volume517
Issue number14
DOIs
Publication statusPublished - 2009 May 29

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Thin film transistors by solution-based indium gallium zinc oxide/carbon nanotubes blend'. Together they form a unique fingerprint.

  • Cite this