Thin film transistors with ink-jet printed amorphous oxide semiconductors

Dongjo Kim, Youngmin Jeong, Chang Young Koo, Keunkyu Song, Joohoj Moon

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)


We investigated the influence of the thickness of printed Ga-In-Zn-O (GIZO) channel on transistor performance. Semiconductor layers were inkjet printed using sol-gel derived GIZO solution and the thickness of the resulting active layers varied depending on the pre-heated substrate temperature. We found that GIZO film thickness significantly influences device performance. Thin film transistors (TFTs) with thicker active layers showed higher on-current/off- current mobility and a threshold voltage shift in the negative direction. The dependence of the electric characteristics on thickness resulted from the increased intrinsic free charge carriers as the active layer thickness increased. Ink-jet printing conditions need to be carefully controlled to maximize device performance.

Original languageEnglish
Pages (from-to)05EB061-05EB064
JournalJapanese journal of applied physics
Issue number5 PART 2
Publication statusPublished - 2010 May

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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