Thin film transistors with ink-jet printed amorphous oxide semiconductors

Dongjo Kim; Youngmin Jeong; Chang Young Koo; Keunkyu Song; Joohoj Moon

doi:10.1143/JJAP.49.05EB06

Thin film transistors with ink-jet printed amorphous oxide semiconductors

Dongjo Kim, Youngmin Jeong, Chang Young Koo, Keunkyu Song, Joohoj Moon

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

We investigated the influence of the thickness of printed Ga-In-Zn-O (GIZO) channel on transistor performance. Semiconductor layers were inkjet printed using sol-gel derived GIZO solution and the thickness of the resulting active layers varied depending on the pre-heated substrate temperature. We found that GIZO film thickness significantly influences device performance. Thin film transistors (TFTs) with thicker active layers showed higher on-current/off- current mobility and a threshold voltage shift in the negative direction. The dependence of the electric characteristics on thickness resulted from the increased intrinsic free charge carriers as the active layer thickness increased. Ink-jet printing conditions need to be carefully controlled to maximize device performance.

Original language	English
Pages (from-to)	05EB061-05EB064
Journal	Japanese journal of applied physics
Volume	49
Issue number	5 PART 2
DOIs	https://doi.org/10.1143/JJAP.49.05EB06
Publication status	Published - 2010 May

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.49.05EB06

Fingerprint Dive into the research topics of 'Thin film transistors with ink-jet printed amorphous oxide semiconductors'. Together they form a unique fingerprint.

Cite this

@article{60888a7f026544bdb76c10b9ead252fe,

title = "Thin film transistors with ink-jet printed amorphous oxide semiconductors",

abstract = "We investigated the influence of the thickness of printed Ga-In-Zn-O (GIZO) channel on transistor performance. Semiconductor layers were inkjet printed using sol-gel derived GIZO solution and the thickness of the resulting active layers varied depending on the pre-heated substrate temperature. We found that GIZO film thickness significantly influences device performance. Thin film transistors (TFTs) with thicker active layers showed higher on-current/off- current mobility and a threshold voltage shift in the negative direction. The dependence of the electric characteristics on thickness resulted from the increased intrinsic free charge carriers as the active layer thickness increased. Ink-jet printing conditions need to be carefully controlled to maximize device performance.",

author = "Dongjo Kim and Youngmin Jeong and Koo, {Chang Young} and Keunkyu Song and Joohoj Moon",

year = "2010",

month = may,

doi = "10.1143/JJAP.49.05EB06",

language = "English",

volume = "49",

pages = "05EB061--05EB064",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

number = "5 PART 2",

}

TY - JOUR

T1 - Thin film transistors with ink-jet printed amorphous oxide semiconductors

AU - Kim, Dongjo

AU - Jeong, Youngmin

AU - Koo, Chang Young

AU - Song, Keunkyu

AU - Moon, Joohoj

PY - 2010/5

Y1 - 2010/5

N2 - We investigated the influence of the thickness of printed Ga-In-Zn-O (GIZO) channel on transistor performance. Semiconductor layers were inkjet printed using sol-gel derived GIZO solution and the thickness of the resulting active layers varied depending on the pre-heated substrate temperature. We found that GIZO film thickness significantly influences device performance. Thin film transistors (TFTs) with thicker active layers showed higher on-current/off- current mobility and a threshold voltage shift in the negative direction. The dependence of the electric characteristics on thickness resulted from the increased intrinsic free charge carriers as the active layer thickness increased. Ink-jet printing conditions need to be carefully controlled to maximize device performance.

AB - We investigated the influence of the thickness of printed Ga-In-Zn-O (GIZO) channel on transistor performance. Semiconductor layers were inkjet printed using sol-gel derived GIZO solution and the thickness of the resulting active layers varied depending on the pre-heated substrate temperature. We found that GIZO film thickness significantly influences device performance. Thin film transistors (TFTs) with thicker active layers showed higher on-current/off- current mobility and a threshold voltage shift in the negative direction. The dependence of the electric characteristics on thickness resulted from the increased intrinsic free charge carriers as the active layer thickness increased. Ink-jet printing conditions need to be carefully controlled to maximize device performance.

UR - http://www.scopus.com/inward/record.url?scp=77952987116&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77952987116&partnerID=8YFLogxK

U2 - 10.1143/JJAP.49.05EB06

DO - 10.1143/JJAP.49.05EB06

M3 - Article

AN - SCOPUS:77952987116

VL - 49

SP - 05EB061-05EB064

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 5 PART 2

ER -

Thin film transistors with ink-jet printed amorphous oxide semiconductors

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Cite this