Abstract
We investigated the influence of the thickness of printed Ga-In-Zn-O (GIZO) channel on transistor performance. Semiconductor layers were inkjet printed using sol-gel derived GIZO solution and the thickness of the resulting active layers varied depending on the pre-heated substrate temperature. We found that GIZO film thickness significantly influences device performance. Thin film transistors (TFTs) with thicker active layers showed higher on-current/off- current mobility and a threshold voltage shift in the negative direction. The dependence of the electric characteristics on thickness resulted from the increased intrinsic free charge carriers as the active layer thickness increased. Ink-jet printing conditions need to be carefully controlled to maximize device performance.
| Original language | English |
|---|---|
| Pages (from-to) | 05EB061-05EB064 |
| Journal | Japanese journal of applied physics |
| Volume | 49 |
| Issue number | 5 PART 2 |
| DOIs | |
| Publication status | Published - 2010 May 1 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
Cite this
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Thin film transistors with ink-jet printed amorphous oxide semiconductors. / Kim, Dongjo; Jeong, Youngmin; Koo, Chang Young; Song, Keunkyu; Moon, Joohoj.
In: Japanese journal of applied physics, Vol. 49, No. 5 PART 2, 01.05.2010, p. 05EB061-05EB064.Research output: Contribution to journal › Article
TY - JOUR
T1 - Thin film transistors with ink-jet printed amorphous oxide semiconductors
AU - Kim, Dongjo
AU - Jeong, Youngmin
AU - Koo, Chang Young
AU - Song, Keunkyu
AU - Moon, Joohoj
PY - 2010/5/1
Y1 - 2010/5/1
N2 - We investigated the influence of the thickness of printed Ga-In-Zn-O (GIZO) channel on transistor performance. Semiconductor layers were inkjet printed using sol-gel derived GIZO solution and the thickness of the resulting active layers varied depending on the pre-heated substrate temperature. We found that GIZO film thickness significantly influences device performance. Thin film transistors (TFTs) with thicker active layers showed higher on-current/off- current mobility and a threshold voltage shift in the negative direction. The dependence of the electric characteristics on thickness resulted from the increased intrinsic free charge carriers as the active layer thickness increased. Ink-jet printing conditions need to be carefully controlled to maximize device performance.
AB - We investigated the influence of the thickness of printed Ga-In-Zn-O (GIZO) channel on transistor performance. Semiconductor layers were inkjet printed using sol-gel derived GIZO solution and the thickness of the resulting active layers varied depending on the pre-heated substrate temperature. We found that GIZO film thickness significantly influences device performance. Thin film transistors (TFTs) with thicker active layers showed higher on-current/off- current mobility and a threshold voltage shift in the negative direction. The dependence of the electric characteristics on thickness resulted from the increased intrinsic free charge carriers as the active layer thickness increased. Ink-jet printing conditions need to be carefully controlled to maximize device performance.
UR - http://www.scopus.com/inward/record.url?scp=77952987116&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77952987116&partnerID=8YFLogxK
U2 - 10.1143/JJAP.49.05EB06
DO - 10.1143/JJAP.49.05EB06
M3 - Article
AN - SCOPUS:77952987116
VL - 49
SP - 05EB061-05EB064
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - 5 PART 2
ER -