Abstract
We investigated the influence of the thickness of printed Ga-In-Zn-O (GIZO) channel on transistor performance. Semiconductor layers were inkjet printed using sol-gel derived GIZO solution and the thickness of the resulting active layers varied depending on the pre-heated substrate temperature. We found that GIZO film thickness significantly influences device performance. Thin film transistors (TFTs) with thicker active layers showed higher on-current/off- current mobility and a threshold voltage shift in the negative direction. The dependence of the electric characteristics on thickness resulted from the increased intrinsic free charge carriers as the active layer thickness increased. Ink-jet printing conditions need to be carefully controlled to maximize device performance.
Original language | English |
---|---|
Pages (from-to) | 05EB061-05EB064 |
Journal | Japanese journal of applied physics |
Volume | 49 |
Issue number | 5 PART 2 |
DOIs | |
Publication status | Published - 2010 May |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)