Three-dimensional optical bit memory in Sm(DBM)3Phen-doped and un-doped poly(methyl methacrylate)

Zhaogang Nie, Xinzhong Li, Yuping Tai, Ki Soo Lim, Myeongkyu Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The feasibility of three-dimensional optical bit memory is demonstrated by using the change of fluorescence and refractive index in Sm(DBM) 3Phen-doped and un-doped Poly(methyl methacrylate). After a femtosecond pulsed laser irradiation, a refractive-index bit and a fluorescent bit can be formed at the same position inside the bulk sample. Multilayer patterns recorded by tightly focusing the pulsed laser beam were read out by a reflection-type fluorescent confocal microscope, which can detect the reflection signal and also the fluorescent signal of the stored bits. The signal-to-noise ratio via the two retrieval modes was compared as a function of recording depth. The stored bits were retrieved with a high signal-to-noise ratio in the absence of any crosstalk and the detection of the fluorescent signal enables retrieval of the stored bits with a higher S/N ratio.

Original languageEnglish
Title of host publicationMaterials and Design
Pages2251-2254
Number of pages4
DOIs
Publication statusPublished - 2011 Aug 1
Event2011 International Conference on Advanced Engineering Materials and Technology, AEMT 2011 - Sanya, China
Duration: 2011 Jul 292011 Jul 31

Publication series

NameAdvanced Materials Research
Volume284-286
ISSN (Print)1022-6680

Other

Other2011 International Conference on Advanced Engineering Materials and Technology, AEMT 2011
CountryChina
CitySanya
Period11/7/2911/7/31

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Nie, Z., Li, X., Tai, Y., Lim, K. S., & Lee, M. (2011). Three-dimensional optical bit memory in Sm(DBM)3Phen-doped and un-doped poly(methyl methacrylate). In Materials and Design (pp. 2251-2254). (Advanced Materials Research; Vol. 284-286). https://doi.org/10.4028/www.scientific.net/AMR.284-286.2251