In this study, atomic layer deposition processes were developed for application of chalcogenide GeTex and GeTexS1−x thin films in threshold switching devices. Owing to the low controllability of chemical compositions of thin films with a given precursor, and to achieve an optimal chemical composition for favorable electrical performance of threshold switching devices, the super-cyclic atomic layer deposition process was adopted using a combination of Ge-Te, Te-Te, and Ge-S sub-cycles. In the electrical test, the S-doped GeTex thin film-based threshold switching device showed an enhanced electrical performance than that without S. By analyzing the temperature dependent current-voltage characteristics and X-ray photoelectron spectroscopy, it was discovered that the improved electrical characteristics in the S-doped GeTex thin film are caused by the narrow energy distribution and increased energy depth of electron traps. The results of this study can guide the fabrication of 3D structured electronic devices with high integration densities in the fields of next-generation memory and brain-inspired neuromorphic applications.
|Journal||Journal of Materials Chemistry C|
|Publication status||Published - 2022|
Bibliographical noteFunding Information:
This work was supported by the National Research Foundation of Korea (NRF-2020 M3F3A2A01082498). This research was conducted as Project No. SS2221-10 (Development of smart chemical materials for IoT devices) and was supported by the Korea Research Institute of Chemical Technology.
© 2022 The Royal Society of Chemistry.
All Science Journal Classification (ASJC) codes
- Materials Chemistry