Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory

Jong Ho Lee; Gun Hwan Kim; Young Bae Ahn; Ji Woon Park; Seung Wook Ryu; Cheol Seong Hwang; Hyeong Joon Kim

doi:10.1063/1.3696077

Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory

Jong Ho Lee, Gun Hwan Kim, Young Bae Ahn, Ji Woon Park, Seung Wook Ryu, Cheol Seong Hwang, Hyeong Joon Kim

School of System & Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Threshold-switching (TS) and selector performances of Si-As-Te thin films for crossbar resistive memory were studied. Composition of the film was the major factor determining the emergence of TS. On-state conduction was found to occur at localized regions. The change of threshold voltage and off-state current by varying composition was observed, which were explained by the change in the concentration of defects and generation efficiency of carriers. The serially connected TiO ₂ unipolar switching memory and Si-As-Te threshold switch showed the resistance switching of the memory layer with the leakage current lowered by ∼120 times at 0.5 V.

Original language	English
Article number	123505
Journal	Applied Physics Letters
Volume	100
Issue number	12
DOIs	https://doi.org/10.1063/1.3696077
Publication status	Published - 2012 Mar 19

Bibliographical note

Funding Information:
This work was supported by R&D Program (#:10039191), and National Research Program for Nano Semiconductor Apparatus Development sponsored by the Korean Ministry of Knowledge and Economy.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3696077

Cite this

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title = "Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory",

abstract = "Threshold-switching (TS) and selector performances of Si-As-Te thin films for crossbar resistive memory were studied. Composition of the film was the major factor determining the emergence of TS. On-state conduction was found to occur at localized regions. The change of threshold voltage and off-state current by varying composition was observed, which were explained by the change in the concentration of defects and generation efficiency of carriers. The serially connected TiO 2 unipolar switching memory and Si-As-Te threshold switch showed the resistance switching of the memory layer with the leakage current lowered by ∼120 times at 0.5 V.",

author = "{Ho Lee}, Jong and {Hwan Kim}, Gun and {Bae Ahn}, Young and {Woon Park}, Ji and {Wook Ryu}, Seung and {Seong Hwang}, Cheol and {Joon Kim}, Hyeong",

note = "Funding Information: This work was supported by R&D Program (#:10039191), and National Research Program for Nano Semiconductor Apparatus Development sponsored by the Korean Ministry of Knowledge and Economy.",

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doi = "10.1063/1.3696077",

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AU - Ho Lee, Jong

AU - Hwan Kim, Gun

AU - Bae Ahn, Young

AU - Woon Park, Ji

AU - Wook Ryu, Seung

AU - Seong Hwang, Cheol

AU - Joon Kim, Hyeong

N1 - Funding Information: This work was supported by R&D Program (#:10039191), and National Research Program for Nano Semiconductor Apparatus Development sponsored by the Korean Ministry of Knowledge and Economy.

PY - 2012/3/19

Y1 - 2012/3/19

N2 - Threshold-switching (TS) and selector performances of Si-As-Te thin films for crossbar resistive memory were studied. Composition of the film was the major factor determining the emergence of TS. On-state conduction was found to occur at localized regions. The change of threshold voltage and off-state current by varying composition was observed, which were explained by the change in the concentration of defects and generation efficiency of carriers. The serially connected TiO 2 unipolar switching memory and Si-As-Te threshold switch showed the resistance switching of the memory layer with the leakage current lowered by ∼120 times at 0.5 V.

AB - Threshold-switching (TS) and selector performances of Si-As-Te thin films for crossbar resistive memory were studied. Composition of the film was the major factor determining the emergence of TS. On-state conduction was found to occur at localized regions. The change of threshold voltage and off-state current by varying composition was observed, which were explained by the change in the concentration of defects and generation efficiency of carriers. The serially connected TiO 2 unipolar switching memory and Si-As-Te threshold switch showed the resistance switching of the memory layer with the leakage current lowered by ∼120 times at 0.5 V.

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Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory

Abstract

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