Threshold Switching of Ag-Ga₂Te₃ Selector with High Endurance for Applications to Cross-Point Arrays

Threshold switching in chalcogenides has attracted considerable attention because of their potential application to high-density and three-dimensional stackable cross-point array structures. However, despite their excellent threshold switching characteristics, the selectivity and endurance characteristics of such selectors should be improved for practical application. In this study, the effect of Ag on the threshold switching behavior of a Ga₂Te₃ selector was investigated in terms of selectivity and endurance. The Ag-Ga₂Te₃ selector exhibited a high selectivity of 10⁸ with low off-state current of < 100 fA, steep turn-on slope of 0.19 mV/dec, and high endurance of 10⁹ cycles. The transient response was verified to depend on the pulse input voltage and measurement temperature. Considering its excellent threshold switching characteristics, the Ag-Ga₂Te₃ selector is a promising candidate for applications in cross-point array structures.