Threshold voltage change due to organic-inorganic interface in pentacene thin-film transistors

Jiyoul Lee, J. H. Kim, Seongil Im, Duk Young Jung

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32 Citations (Scopus)

Abstract

A 270nm thick Al2O3+x gate dielectric deposited on indium tin oxide glass was used to construct the pentacene-based organic thin-film transistors (OTFT). Two different deposition techniques, traditional thermal evaporation (TE) and energetic cluster evaporation (ECE), were used for the investigation. The TE-depsoited pentacene channel appeared superior to the ECE-deposited pentacene in regard to hole mobility and crystallinity. However, the ECE-prepared OTFT show a threshold voltage shift which is more prominent with proper chemical treatment on the surface of Al2O3+x gate oxide.

Original languageEnglish
Pages (from-to)2301-2304
Number of pages4
JournalJournal of Applied Physics
Volume96
Issue number4
DOIs
Publication statusPublished - 2004 Aug 15

Bibliographical note

Funding Information:
The authors acknowledge the financial support from KISTEP (Grant No. M1-0214-00-0228) and the BK 21 Program. J.H.K. acknowledges support from eSSC at Postech funded by KOSEF.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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