Threshold voltage control by gate electrode in Ga-Sn-Zn-O thin-film transistors for logic inverter application

Hee Sung Lee; Chan Ho Park; Kwang H. Lee; Dong Ho Kim; Hye Ri Kim; Gun Hwan Lee; Seongil Im

doi:10.1002/pssr.201105158

Threshold voltage control by gate electrode in Ga-Sn-Zn-O thin-film transistors for logic inverter application

Hee Sung Lee, Chan Ho Park, Kwang H. Lee, Dong Ho Kim, Hye Ri Kim, Gun Hwan Lee, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We report on the fabrication of Ga-Sn-Zn-O thin-film transistors (GTZO-TFTs) and their inverter application. For the most stable and highly-performing GTZO-TFT, an optimal oxygen pressure condition was extracted out during co-sputter deposition of Ga-doped ZnO and SnO₂. Using the oxygen pressure condition, we fabricated top-gate GTZO-TFTs for a logic inverter, which has two serially-connected top-gate TFTs with different gate electrodes: conducting NiO_x and Al. Since the electrodes have very different work functions controlling the threshold voltages of TFTs, our inverter demonstrated a nice operation at less than 5 V with a high voltage gain of over 25. (

Original language	English
Pages (from-to)	211-213
Number of pages	3
Journal	Physica Status Solidi - Rapid Research Letters
Volume	5
Issue number	5-6
DOIs	https://doi.org/10.1002/pssr.201105158
Publication status	Published - 2011 Jun

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics

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10.1002/pssr.201105158

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title = "Threshold voltage control by gate electrode in Ga-Sn-Zn-O thin-film transistors for logic inverter application",

abstract = "We report on the fabrication of Ga-Sn-Zn-O thin-film transistors (GTZO-TFTs) and their inverter application. For the most stable and highly-performing GTZO-TFT, an optimal oxygen pressure condition was extracted out during co-sputter deposition of Ga-doped ZnO and SnO2. Using the oxygen pressure condition, we fabricated top-gate GTZO-TFTs for a logic inverter, which has two serially-connected top-gate TFTs with different gate electrodes: conducting NiOx and Al. Since the electrodes have very different work functions controlling the threshold voltages of TFTs, our inverter demonstrated a nice operation at less than 5 V with a high voltage gain of over 25. (",

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AU - Lee, Hee Sung

AU - Park, Chan Ho

AU - Lee, Kwang H.

AU - Kim, Dong Ho

AU - Kim, Hye Ri

AU - Lee, Gun Hwan

AU - Im, Seongil

PY - 2011/6

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AB - We report on the fabrication of Ga-Sn-Zn-O thin-film transistors (GTZO-TFTs) and their inverter application. For the most stable and highly-performing GTZO-TFT, an optimal oxygen pressure condition was extracted out during co-sputter deposition of Ga-doped ZnO and SnO2. Using the oxygen pressure condition, we fabricated top-gate GTZO-TFTs for a logic inverter, which has two serially-connected top-gate TFTs with different gate electrodes: conducting NiOx and Al. Since the electrodes have very different work functions controlling the threshold voltages of TFTs, our inverter demonstrated a nice operation at less than 5 V with a high voltage gain of over 25. (

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Threshold voltage control by gate electrode in Ga-Sn-Zn-O thin-film transistors for logic inverter application

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