Threshold voltage control by gate electrode in Ga-Sn-Zn-O thin-film transistors for logic inverter application

Hee Sung Lee, Chan Ho Park, Kwang H. Lee, Dong Ho Kim, Hye Ri Kim, Gun Hwan Lee, Seongil Im

Research output: Contribution to journalArticle

3 Citations (Scopus)


We report on the fabrication of Ga-Sn-Zn-O thin-film transistors (GTZO-TFTs) and their inverter application. For the most stable and highly-performing GTZO-TFT, an optimal oxygen pressure condition was extracted out during co-sputter deposition of Ga-doped ZnO and SnO2. Using the oxygen pressure condition, we fabricated top-gate GTZO-TFTs for a logic inverter, which has two serially-connected top-gate TFTs with different gate electrodes: conducting NiOx and Al. Since the electrodes have very different work functions controlling the threshold voltages of TFTs, our inverter demonstrated a nice operation at less than 5 V with a high voltage gain of over 25. (

Original languageEnglish
Pages (from-to)211-213
Number of pages3
JournalPhysica Status Solidi - Rapid Research Letters
Issue number5-6
Publication statusPublished - 2011 Jun 1


All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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