Threshold voltage control of Amorphous gallium indium zinc oxide TFTs by suppressing back-channel current

Kyoung Seok Son, Tae Sang Kim, Ji Sim Jung, Myung Kwan Ryu, Kyung Bae Park, Byung Wook Yoo, Keechan Park, Jang Yeon Kwon, Sang Yoon Lee, Jong Min Kim

Research output: Contribution to journalArticle

57 Citations (Scopus)

Abstract

Effects of plasma treatments on the back-channel of amorphous Ga2 O3 - In2 O3 -ZnO (GIZO) thin film transistors (TFTs) are compared for N2 and N2 O plasma. Acceptor-like states originating from the oxygen adsorbed on the back-channel of the GIZO TFTs suppress the back-channel current by capturing the electrons in the GIZO active layer and thus shift the threshold voltage to the positive direction. It is also shown that the oxygen in a silicon oxide passivation layer reduces the back-channel current. An enhancement-mode GIZO TFT has been successfully fabricated by combining the N2 O plasma treatment and the silicon oxide passivation layer.

Original languageEnglish
Pages (from-to)H26-H28
JournalElectrochemical and Solid-State Letters
Volume12
Issue number1
DOIs
Publication statusPublished - 2008 Nov 19

Fingerprint

Zinc Oxide
Gallium
Indium
Thin film transistors
Zinc oxide
Threshold voltage
Voltage control
threshold voltage
zinc oxides
indium oxides
Oxide films
gallium
transistors
Silicon oxides
Plasmas
Passivation
thin films
silicon oxides
Oxygen
passivity

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Son, Kyoung Seok ; Kim, Tae Sang ; Jung, Ji Sim ; Ryu, Myung Kwan ; Park, Kyung Bae ; Yoo, Byung Wook ; Park, Keechan ; Kwon, Jang Yeon ; Lee, Sang Yoon ; Kim, Jong Min. / Threshold voltage control of Amorphous gallium indium zinc oxide TFTs by suppressing back-channel current. In: Electrochemical and Solid-State Letters. 2008 ; Vol. 12, No. 1. pp. H26-H28.
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Threshold voltage control of Amorphous gallium indium zinc oxide TFTs by suppressing back-channel current. / Son, Kyoung Seok; Kim, Tae Sang; Jung, Ji Sim; Ryu, Myung Kwan; Park, Kyung Bae; Yoo, Byung Wook; Park, Keechan; Kwon, Jang Yeon; Lee, Sang Yoon; Kim, Jong Min.

In: Electrochemical and Solid-State Letters, Vol. 12, No. 1, 19.11.2008, p. H26-H28.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Threshold voltage control of Amorphous gallium indium zinc oxide TFTs by suppressing back-channel current

AU - Son, Kyoung Seok

AU - Kim, Tae Sang

AU - Jung, Ji Sim

AU - Ryu, Myung Kwan

AU - Park, Kyung Bae

AU - Yoo, Byung Wook

AU - Park, Keechan

AU - Kwon, Jang Yeon

AU - Lee, Sang Yoon

AU - Kim, Jong Min

PY - 2008/11/19

Y1 - 2008/11/19

N2 - Effects of plasma treatments on the back-channel of amorphous Ga2 O3 - In2 O3 -ZnO (GIZO) thin film transistors (TFTs) are compared for N2 and N2 O plasma. Acceptor-like states originating from the oxygen adsorbed on the back-channel of the GIZO TFTs suppress the back-channel current by capturing the electrons in the GIZO active layer and thus shift the threshold voltage to the positive direction. It is also shown that the oxygen in a silicon oxide passivation layer reduces the back-channel current. An enhancement-mode GIZO TFT has been successfully fabricated by combining the N2 O plasma treatment and the silicon oxide passivation layer.

AB - Effects of plasma treatments on the back-channel of amorphous Ga2 O3 - In2 O3 -ZnO (GIZO) thin film transistors (TFTs) are compared for N2 and N2 O plasma. Acceptor-like states originating from the oxygen adsorbed on the back-channel of the GIZO TFTs suppress the back-channel current by capturing the electrons in the GIZO active layer and thus shift the threshold voltage to the positive direction. It is also shown that the oxygen in a silicon oxide passivation layer reduces the back-channel current. An enhancement-mode GIZO TFT has been successfully fabricated by combining the N2 O plasma treatment and the silicon oxide passivation layer.

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