Threshold voltage control of Amorphous gallium indium zinc oxide TFTs by suppressing back-channel current

Kyoung Seok Son, Tae Sang Kim, Ji Sim Jung, Myung Kwan Ryu, Kyung Bae Park, Byung Wook Yoo, Keechan Park, Jang Yeon Kwon, Sang Yoon Lee, Jong Min Kim

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59 Citations (Scopus)

Abstract

Effects of plasma treatments on the back-channel of amorphous Ga2 O3 - In2 O3 -ZnO (GIZO) thin film transistors (TFTs) are compared for N2 and N2 O plasma. Acceptor-like states originating from the oxygen adsorbed on the back-channel of the GIZO TFTs suppress the back-channel current by capturing the electrons in the GIZO active layer and thus shift the threshold voltage to the positive direction. It is also shown that the oxygen in a silicon oxide passivation layer reduces the back-channel current. An enhancement-mode GIZO TFT has been successfully fabricated by combining the N2 O plasma treatment and the silicon oxide passivation layer.

Original languageEnglish
Pages (from-to)H26-H28
JournalElectrochemical and Solid-State Letters
Volume12
Issue number1
DOIs
Publication statusPublished - 2008 Nov 19

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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    Son, K. S., Kim, T. S., Jung, J. S., Ryu, M. K., Park, K. B., Yoo, B. W., Park, K., Kwon, J. Y., Lee, S. Y., & Kim, J. M. (2008). Threshold voltage control of Amorphous gallium indium zinc oxide TFTs by suppressing back-channel current. Electrochemical and Solid-State Letters, 12(1), H26-H28. https://doi.org/10.1149/1.3020766