Effects of plasma treatments on the back-channel of amorphous Ga2 O3 - In2 O3 -ZnO (GIZO) thin film transistors (TFTs) are compared for N2 and N2 O plasma. Acceptor-like states originating from the oxygen adsorbed on the back-channel of the GIZO TFTs suppress the back-channel current by capturing the electrons in the GIZO active layer and thus shift the threshold voltage to the positive direction. It is also shown that the oxygen in a silicon oxide passivation layer reduces the back-channel current. An enhancement-mode GIZO TFT has been successfully fabricated by combining the N2 O plasma treatment and the silicon oxide passivation layer.
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering