Threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment

jin woo Park, Hong Koo Baik, Taekyung Lim, Sanghyun Ju

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

In developing complementary metal-oxide semiconductor logic circuits using N-type semiconducting nanowires, threshold voltage (Vth) control is crucial because the driving voltage should be established in relation to the Vth dispersion of transistors. In this study, using N2 plasma treatment, positive shifts of SnO2 nanowire transistor (NWT) devices were produced as desired without degrading the nanowire surfaces. The NWT devices exhibited positive Vth shifts of ∼0.9 and ∼1.5 V and decreases in on-currents of ∼20% and ∼40% at plasma source powers of 200 and 400 W, respectively, without any changes in subthreshold slope or off-current. The positive Vth shifts and decreases in on-current can be explained by assuming that nitrogen ions (N3-) filled in for the existing oxygen vacancies (Vo, Vo+, and Vo ++) and that consequently, the amount of oxygen vacancies playing a role in electron-trapping decreased.

Original languageEnglish
Article number203508
JournalApplied Physics Letters
Volume97
Issue number20
DOIs
Publication statusPublished - 2010 Nov 15

Fingerprint

nitrogen plasma
threshold voltage
nanowires
transistors
oxides
shift
plasma power sources
logic circuits
nitrogen ions
oxygen
CMOS
trapping
slopes
electric potential
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "In developing complementary metal-oxide semiconductor logic circuits using N-type semiconducting nanowires, threshold voltage (Vth) control is crucial because the driving voltage should be established in relation to the Vth dispersion of transistors. In this study, using N2 plasma treatment, positive shifts of SnO2 nanowire transistor (NWT) devices were produced as desired without degrading the nanowire surfaces. The NWT devices exhibited positive Vth shifts of ∼0.9 and ∼1.5 V and decreases in on-currents of ∼20{\%} and ∼40{\%} at plasma source powers of 200 and 400 W, respectively, without any changes in subthreshold slope or off-current. The positive Vth shifts and decreases in on-current can be explained by assuming that nitrogen ions (N3-) filled in for the existing oxygen vacancies (Vo, Vo+, and Vo ++) and that consequently, the amount of oxygen vacancies playing a role in electron-trapping decreased.",
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Threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment. / Park, jin woo; Baik, Hong Koo; Lim, Taekyung; Ju, Sanghyun.

In: Applied Physics Letters, Vol. 97, No. 20, 203508, 15.11.2010.

Research output: Contribution to journalArticle

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