Threshold voltage shift prediction for gate bias stress on amorphous InGaZnO thin film transistors

Suehye Park; Edward Namkyu Cho; Ilgu Yun

doi:10.1016/j.microrel.2012.07.005

Threshold voltage shift prediction for gate bias stress on amorphous InGaZnO thin film transistors

Suehye Park, Edward Namkyu Cho, Ilgu Yun

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

The demand for amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) has increased due to the high mobility and suitability for low temperature fabrication. A prediction of the threshold voltage shift (ΔV _th) under bias stress is required for the commercial use of a-IGZO TFTs. We have investigated effects of the channel length and alternating pulse bias (positive and negative gate bias stress in sequence) with different positive gate bias values (V _GS+) on ΔV _th. We found that ΔV _th increases as the channel length decreases or V _GS+ increases, due to the increase in the charge trapping rate. Finally, the degradation behaviors of a-IGZO TFTs are predicted.

Original language	English
Pages (from-to)	2215-2219
Number of pages	5
Journal	Microelectronics Reliability
Volume	52
Issue number	9-10
DOIs	https://doi.org/10.1016/j.microrel.2012.07.005
Publication status	Published - 2012 Sep

Bibliographical note

Funding Information:
This work was supported by Yonsei University, Institute of TMS Information Technology, a Brain Korea 21 program, Korea.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Safety, Risk, Reliability and Quality
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.microrel.2012.07.005

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abstract = "The demand for amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) has increased due to the high mobility and suitability for low temperature fabrication. A prediction of the threshold voltage shift (ΔV th) under bias stress is required for the commercial use of a-IGZO TFTs. We have investigated effects of the channel length and alternating pulse bias (positive and negative gate bias stress in sequence) with different positive gate bias values (V GS+) on ΔV th. We found that ΔV th increases as the channel length decreases or V GS+ increases, due to the increase in the charge trapping rate. Finally, the degradation behaviors of a-IGZO TFTs are predicted.",

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AU - Park, Suehye

AU - Cho, Edward Namkyu

AU - Yun, Ilgu

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AB - The demand for amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) has increased due to the high mobility and suitability for low temperature fabrication. A prediction of the threshold voltage shift (ΔV th) under bias stress is required for the commercial use of a-IGZO TFTs. We have investigated effects of the channel length and alternating pulse bias (positive and negative gate bias stress in sequence) with different positive gate bias values (V GS+) on ΔV th. We found that ΔV th increases as the channel length decreases or V GS+ increases, due to the increase in the charge trapping rate. Finally, the degradation behaviors of a-IGZO TFTs are predicted.

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Threshold voltage shift prediction for gate bias stress on amorphous InGaZnO thin film transistors

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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