We investigated the low current resistive switching behavior using Ti-doped Al2O3 and sub-stoichiometric TaOx layers. The optimized concentrations of Ti and O in each Al2O3 and TaOx layer can make the resistive switching device show the stable retention characteristic and 3-bit operation in the current regime under 1 μA. Doped Ti in the Al2O3 layer generated oxygen vacancies to facilitate fluent resistive switching, and the TaOx layer with an appropriate oxygen concentration played the role of an oxygen reservoir and load resistance for reliable retention and electric pulse compatible characteristics, respectively. We presented the materials optimization processes and comparative resistive switching characteristics in detail.
Bibliographical noteFunding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant, funded by the Korea Government (MSIT No. NRF-2019R1F1A1060272).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)