In this study, we examine the possibility of using Ti/Cu bilayer as source/drain electrodes for SiNx -passivated Hf-In-Zn-O (HIZO) thin film transistors by comparing their electrical properties with devices that use Mo electrodes. The Mo devices operate in depletion mode with a higher field effect mobility, while the Ti/Cu devices exhibit an improved subthreshold swing and operate in enhancement mode. Transmission electron microscopy characterization reveals the formation of an amorphous TiOx layer at the Ti/HIZO interface, which is suggested to be responsible for the disparate device characteristics in terms of contact resistance and threshold delay.
|Journal||Applied Physics Letters|
|Publication status||Published - 2010 Oct 18|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)