Ti/Cu bilayer electrodes for SiNx -passivated Hf-In-Zn-O thin film transistors: Device performance and contact resistance

Joon Seok Park, Tae Sang Kim, Kyoung Seok Son, Eunha Lee, Ji Sim Jung, Kwang Hee Lee, Wan Joo Maeng, Hyun Suk Kim, Eok Su Kim, Kyung Bae Park, Jang Yeon Kwon, Myung Kwan Ryu, Sang Yoon Lee

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

In this study, we examine the possibility of using Ti/Cu bilayer as source/drain electrodes for SiNx -passivated Hf-In-Zn-O (HIZO) thin film transistors by comparing their electrical properties with devices that use Mo electrodes. The Mo devices operate in depletion mode with a higher field effect mobility, while the Ti/Cu devices exhibit an improved subthreshold swing and operate in enhancement mode. Transmission electron microscopy characterization reveals the formation of an amorphous TiOx layer at the Ti/HIZO interface, which is suggested to be responsible for the disparate device characteristics in terms of contact resistance and threshold delay.

Original languageEnglish
Article number162105
JournalApplied Physics Letters
Volume97
Issue number16
DOIs
Publication statusPublished - 2010 Oct 18

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Ti/Cu bilayer electrodes for SiN<sub>x</sub> -passivated Hf-In-Zn-O thin film transistors: Device performance and contact resistance'. Together they form a unique fingerprint.

  • Cite this

    Park, J. S., Kim, T. S., Son, K. S., Lee, E., Jung, J. S., Lee, K. H., Maeng, W. J., Kim, H. S., Kim, E. S., Park, K. B., Kwon, J. Y., Ryu, M. K., & Lee, S. Y. (2010). Ti/Cu bilayer electrodes for SiNx -passivated Hf-In-Zn-O thin film transistors: Device performance and contact resistance. Applied Physics Letters, 97(16), [162105]. https://doi.org/10.1063/1.3505151