Ti/Cu bilayer electrodes for SiNx -passivated Hf-In-Zn-O thin film transistors: Device performance and contact resistance

Joon Seok Park, Tae Sang Kim, Kyoung Seok Son, Eunha Lee, Ji Sim Jung, Kwang Hee Lee, Wan Joo Maeng, Hyun Suk Kim, Eok Su Kim, Kyung Bae Park, Jang Yeon Kwon, Myung Kwan Ryu, Sang Yoon Lee

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

In this study, we examine the possibility of using Ti/Cu bilayer as source/drain electrodes for SiNx -passivated Hf-In-Zn-O (HIZO) thin film transistors by comparing their electrical properties with devices that use Mo electrodes. The Mo devices operate in depletion mode with a higher field effect mobility, while the Ti/Cu devices exhibit an improved subthreshold swing and operate in enhancement mode. Transmission electron microscopy characterization reveals the formation of an amorphous TiOx layer at the Ti/HIZO interface, which is suggested to be responsible for the disparate device characteristics in terms of contact resistance and threshold delay.

Original languageEnglish
Article number162105
JournalApplied Physics Letters
Volume97
Issue number16
DOIs
Publication statusPublished - 2010 Oct 18

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contact resistance
transistors
electrodes
thin films
depletion
electrical properties
transmission electron microscopy
thresholds
augmentation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Park, Joon Seok ; Kim, Tae Sang ; Son, Kyoung Seok ; Lee, Eunha ; Jung, Ji Sim ; Lee, Kwang Hee ; Maeng, Wan Joo ; Kim, Hyun Suk ; Kim, Eok Su ; Park, Kyung Bae ; Kwon, Jang Yeon ; Ryu, Myung Kwan ; Lee, Sang Yoon. / Ti/Cu bilayer electrodes for SiNx -passivated Hf-In-Zn-O thin film transistors : Device performance and contact resistance. In: Applied Physics Letters. 2010 ; Vol. 97, No. 16.
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abstract = "In this study, we examine the possibility of using Ti/Cu bilayer as source/drain electrodes for SiNx -passivated Hf-In-Zn-O (HIZO) thin film transistors by comparing their electrical properties with devices that use Mo electrodes. The Mo devices operate in depletion mode with a higher field effect mobility, while the Ti/Cu devices exhibit an improved subthreshold swing and operate in enhancement mode. Transmission electron microscopy characterization reveals the formation of an amorphous TiOx layer at the Ti/HIZO interface, which is suggested to be responsible for the disparate device characteristics in terms of contact resistance and threshold delay.",
author = "Park, {Joon Seok} and Kim, {Tae Sang} and Son, {Kyoung Seok} and Eunha Lee and Jung, {Ji Sim} and Lee, {Kwang Hee} and Maeng, {Wan Joo} and Kim, {Hyun Suk} and Kim, {Eok Su} and Park, {Kyung Bae} and Kwon, {Jang Yeon} and Ryu, {Myung Kwan} and Lee, {Sang Yoon}",
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Park, JS, Kim, TS, Son, KS, Lee, E, Jung, JS, Lee, KH, Maeng, WJ, Kim, HS, Kim, ES, Park, KB, Kwon, JY, Ryu, MK & Lee, SY 2010, 'Ti/Cu bilayer electrodes for SiNx -passivated Hf-In-Zn-O thin film transistors: Device performance and contact resistance', Applied Physics Letters, vol. 97, no. 16, 162105. https://doi.org/10.1063/1.3505151

Ti/Cu bilayer electrodes for SiNx -passivated Hf-In-Zn-O thin film transistors : Device performance and contact resistance. / Park, Joon Seok; Kim, Tae Sang; Son, Kyoung Seok; Lee, Eunha; Jung, Ji Sim; Lee, Kwang Hee; Maeng, Wan Joo; Kim, Hyun Suk; Kim, Eok Su; Park, Kyung Bae; Kwon, Jang Yeon; Ryu, Myung Kwan; Lee, Sang Yoon.

In: Applied Physics Letters, Vol. 97, No. 16, 162105, 18.10.2010.

Research output: Contribution to journalArticle

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AU - Park, Joon Seok

AU - Kim, Tae Sang

AU - Son, Kyoung Seok

AU - Lee, Eunha

AU - Jung, Ji Sim

AU - Lee, Kwang Hee

AU - Maeng, Wan Joo

AU - Kim, Hyun Suk

AU - Kim, Eok Su

AU - Park, Kyung Bae

AU - Kwon, Jang Yeon

AU - Ryu, Myung Kwan

AU - Lee, Sang Yoon

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Y1 - 2010/10/18

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