Abstract
ZnO films were deposited on sapphire (0001) and single crystalline GaAs (001) substrates using a metal-organic chemical vapor deposition (MOCVD) technique, and systematically analyzed in terms of time integrated and resolved photo-luminescence (TIPL and TRPL) as well as electrical properties. The TIPL, TRPL and electrical properties showed significant differences depending on the nature of the substrate. The correlation between TIPL, TRPL and electrical properties was also investigated based on defects in the ZnO films.
| Original language | English |
|---|---|
| Pages (from-to) | 7376-7378 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 42 |
| Issue number | 12 |
| Publication status | Published - 2003 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Sohn, K. S., Hwang, D. K., & Myoung, J. M. (2003). Time Integrated/Resolved Photoluminescence of ZnO Films Deposited on Sapphire and GaAs. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 42(12), 7376-7378.