Time Integrated/Resolved Photoluminescence of ZnO Films Deposited on Sapphire and GaAs

Kee Sun Sohn, Deuk Kyu Hwang, Jae Min Myoung

Research output: Contribution to journalArticle

3 Citations (Scopus)


ZnO films were deposited on sapphire (0001) and single crystalline GaAs (001) substrates using a metal-organic chemical vapor deposition (MOCVD) technique, and systematically analyzed in terms of time integrated and resolved photo-luminescence (TIPL and TRPL) as well as electrical properties. The TIPL, TRPL and electrical properties showed significant differences depending on the nature of the substrate. The correlation between TIPL, TRPL and electrical properties was also investigated based on defects in the ZnO films.

Original languageEnglish
Pages (from-to)7376-7378
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number12
Publication statusPublished - 2003 Dec 1


All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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