TY - JOUR
T1 - Time Integrated/Resolved Photoluminescence of ZnO Films Deposited on Sapphire and GaAs
AU - Sohn, Kee Sun
AU - Hwang, Deuk Kyu
AU - Myoung, Jae Min
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2003/12
Y1 - 2003/12
N2 - ZnO films were deposited on sapphire (0001) and single crystalline GaAs (001) substrates using a metal-organic chemical vapor deposition (MOCVD) technique, and systematically analyzed in terms of time integrated and resolved photo-luminescence (TIPL and TRPL) as well as electrical properties. The TIPL, TRPL and electrical properties showed significant differences depending on the nature of the substrate. The correlation between TIPL, TRPL and electrical properties was also investigated based on defects in the ZnO films.
AB - ZnO films were deposited on sapphire (0001) and single crystalline GaAs (001) substrates using a metal-organic chemical vapor deposition (MOCVD) technique, and systematically analyzed in terms of time integrated and resolved photo-luminescence (TIPL and TRPL) as well as electrical properties. The TIPL, TRPL and electrical properties showed significant differences depending on the nature of the substrate. The correlation between TIPL, TRPL and electrical properties was also investigated based on defects in the ZnO films.
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U2 - 10.1143/jjap.42.7376
DO - 10.1143/jjap.42.7376
M3 - Article
AN - SCOPUS:1242287992
VL - 42
SP - 7376
EP - 7378
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 12
ER -