Abstract
ZnO films were deposited on sapphire (0001) and single crystalline GaAs (001) substrates using a metal-organic chemical vapor deposition (MOCVD) technique, and systematically analyzed in terms of time integrated and resolved photo-luminescence (TIPL and TRPL) as well as electrical properties. The TIPL, TRPL and electrical properties showed significant differences depending on the nature of the substrate. The correlation between TIPL, TRPL and electrical properties was also investigated based on defects in the ZnO films.
| Original language | English |
|---|---|
| Pages (from-to) | 7376-7378 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 42 |
| Issue number | 12 |
| Publication status | Published - 2003 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Time Integrated/Resolved Photoluminescence of ZnO Films Deposited on Sapphire and GaAs. / Sohn, Kee Sun; Hwang, Deuk Kyu; Myoung, Jae Min.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, No. 12, 01.12.2003, p. 7376-7378.Research output: Contribution to journal › Article
TY - JOUR
T1 - Time Integrated/Resolved Photoluminescence of ZnO Films Deposited on Sapphire and GaAs
AU - Sohn, Kee Sun
AU - Hwang, Deuk Kyu
AU - Myoung, Jae Min
PY - 2003/12/1
Y1 - 2003/12/1
N2 - ZnO films were deposited on sapphire (0001) and single crystalline GaAs (001) substrates using a metal-organic chemical vapor deposition (MOCVD) technique, and systematically analyzed in terms of time integrated and resolved photo-luminescence (TIPL and TRPL) as well as electrical properties. The TIPL, TRPL and electrical properties showed significant differences depending on the nature of the substrate. The correlation between TIPL, TRPL and electrical properties was also investigated based on defects in the ZnO films.
AB - ZnO films were deposited on sapphire (0001) and single crystalline GaAs (001) substrates using a metal-organic chemical vapor deposition (MOCVD) technique, and systematically analyzed in terms of time integrated and resolved photo-luminescence (TIPL and TRPL) as well as electrical properties. The TIPL, TRPL and electrical properties showed significant differences depending on the nature of the substrate. The correlation between TIPL, TRPL and electrical properties was also investigated based on defects in the ZnO films.
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M3 - Article
AN - SCOPUS:1242287992
VL - 42
SP - 7376
EP - 7378
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 12
ER -