Time Integrated/Resolved Photoluminescence of ZnO Films Deposited on Sapphire and GaAs

Kee Sun Sohn, Deuk Kyu Hwang, Jae Min Myoung

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

ZnO films were deposited on sapphire (0001) and single crystalline GaAs (001) substrates using a metal-organic chemical vapor deposition (MOCVD) technique, and systematically analyzed in terms of time integrated and resolved photo-luminescence (TIPL and TRPL) as well as electrical properties. The TIPL, TRPL and electrical properties showed significant differences depending on the nature of the substrate. The correlation between TIPL, TRPL and electrical properties was also investigated based on defects in the ZnO films.

Original languageEnglish
Pages (from-to)7376-7378
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number12
Publication statusPublished - 2003 Dec 1

Fingerprint

Sapphire
Photoluminescence
sapphire
Electric properties
photoluminescence
electrical properties
Organic chemicals
Substrates
Chemical vapor deposition
Crystalline materials
metalorganic chemical vapor deposition
Defects
Metals
defects

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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Time Integrated/Resolved Photoluminescence of ZnO Films Deposited on Sapphire and GaAs. / Sohn, Kee Sun; Hwang, Deuk Kyu; Myoung, Jae Min.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, No. 12, 01.12.2003, p. 7376-7378.

Research output: Contribution to journalArticle

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