Time Integrated/Resolved Photoluminescence of ZnO Films Deposited on Sapphire and GaAs

Kee Sun Sohn; Deuk Kyu Hwang; Jae Min Myoung

doi:10.1143/jjap.42.7376

Time Integrated/Resolved Photoluminescence of ZnO Films Deposited on Sapphire and GaAs

Kee Sun Sohn, Deuk Kyu Hwang, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

3 Citations (Scopus)

Abstract

ZnO films were deposited on sapphire (0001) and single crystalline GaAs (001) substrates using a metal-organic chemical vapor deposition (MOCVD) technique, and systematically analyzed in terms of time integrated and resolved photo-luminescence (TIPL and TRPL) as well as electrical properties. The TIPL, TRPL and electrical properties showed significant differences depending on the nature of the substrate. The correlation between TIPL, TRPL and electrical properties was also investigated based on defects in the ZnO films.

Original language	English
Pages (from-to)	7376-7378
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	42
Issue number	12
DOIs	https://doi.org/10.1143/jjap.42.7376
Publication status	Published - 2003 Dec

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.42.7376

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Sohn, K. S., Hwang, D. K., & Myoung, J. M. (2003). Time Integrated/Resolved Photoluminescence of ZnO Films Deposited on Sapphire and GaAs. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 42(12), 7376-7378. https://doi.org/10.1143/jjap.42.7376

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