Time-resolved spectroscopy of InAs quantum dots using one-side modulation-doping technique: Renormalization and screening

Joo In Lee, Hyung Gyoo Lee, Eun Joo Shin, Sungkyu Yu, Kasi Viswanath, Dongho Kim, Gukhyung Ihm

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We present the optical properties of modulation-doped InAs/GaAs quantum dots (QDs). Bandgap renormalization is clearly observed from a red shift of the emission peaks on the QDs with various modulation-doping concentrations, demonstrating that exchange interactions of electrons within single states have no effect on renormalization. Screening due to the electrons at modulation-doped layer as well as the photo-generated carriers in GaAs matrix plays an important role in reducing the radiative recombination rate.

Original languageEnglish
Pages (from-to)122-126
Number of pages5
JournalMaterials Science and Engineering B
Volume51
Issue number1-3
Publication statusPublished - 1998 Feb 27

Fingerprint

modulation doping
Semiconductor quantum dots
Screening
screening
quantum dots
Doping (additives)
Modulation
Spectroscopy
modulation
radiative recombination
red shift
spectroscopy
electrons
Electrons
Exchange interactions
optical properties
Energy gap
matrices
Optical properties
interactions

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lee, Joo In ; Lee, Hyung Gyoo ; Shin, Eun Joo ; Yu, Sungkyu ; Viswanath, Kasi ; Kim, Dongho ; Ihm, Gukhyung. / Time-resolved spectroscopy of InAs quantum dots using one-side modulation-doping technique : Renormalization and screening. In: Materials Science and Engineering B. 1998 ; Vol. 51, No. 1-3. pp. 122-126.
@article{bb914593e49d400184a48296ad9b456d,
title = "Time-resolved spectroscopy of InAs quantum dots using one-side modulation-doping technique: Renormalization and screening",
abstract = "We present the optical properties of modulation-doped InAs/GaAs quantum dots (QDs). Bandgap renormalization is clearly observed from a red shift of the emission peaks on the QDs with various modulation-doping concentrations, demonstrating that exchange interactions of electrons within single states have no effect on renormalization. Screening due to the electrons at modulation-doped layer as well as the photo-generated carriers in GaAs matrix plays an important role in reducing the radiative recombination rate.",
author = "Lee, {Joo In} and Lee, {Hyung Gyoo} and Shin, {Eun Joo} and Sungkyu Yu and Kasi Viswanath and Dongho Kim and Gukhyung Ihm",
year = "1998",
month = "2",
day = "27",
language = "English",
volume = "51",
pages = "122--126",
journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",
issn = "0921-5107",
publisher = "Elsevier BV",
number = "1-3",

}

Time-resolved spectroscopy of InAs quantum dots using one-side modulation-doping technique : Renormalization and screening. / Lee, Joo In; Lee, Hyung Gyoo; Shin, Eun Joo; Yu, Sungkyu; Viswanath, Kasi; Kim, Dongho; Ihm, Gukhyung.

In: Materials Science and Engineering B, Vol. 51, No. 1-3, 27.02.1998, p. 122-126.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Time-resolved spectroscopy of InAs quantum dots using one-side modulation-doping technique

T2 - Renormalization and screening

AU - Lee, Joo In

AU - Lee, Hyung Gyoo

AU - Shin, Eun Joo

AU - Yu, Sungkyu

AU - Viswanath, Kasi

AU - Kim, Dongho

AU - Ihm, Gukhyung

PY - 1998/2/27

Y1 - 1998/2/27

N2 - We present the optical properties of modulation-doped InAs/GaAs quantum dots (QDs). Bandgap renormalization is clearly observed from a red shift of the emission peaks on the QDs with various modulation-doping concentrations, demonstrating that exchange interactions of electrons within single states have no effect on renormalization. Screening due to the electrons at modulation-doped layer as well as the photo-generated carriers in GaAs matrix plays an important role in reducing the radiative recombination rate.

AB - We present the optical properties of modulation-doped InAs/GaAs quantum dots (QDs). Bandgap renormalization is clearly observed from a red shift of the emission peaks on the QDs with various modulation-doping concentrations, demonstrating that exchange interactions of electrons within single states have no effect on renormalization. Screening due to the electrons at modulation-doped layer as well as the photo-generated carriers in GaAs matrix plays an important role in reducing the radiative recombination rate.

UR - http://www.scopus.com/inward/record.url?scp=0012035649&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0012035649&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0012035649

VL - 51

SP - 122

EP - 126

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

IS - 1-3

ER -