Titanium oxide films on Si(100) deposited by e-beam evaporation

H. K. Jang, S. W. Whangbo, Y. K. Choi, Y. D. Chung, K. Jeong, C. N. Whang, Y. S. Lee, H. S. Lee, J. Y. Choi, G. H. Kim, T. K. Kim

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18 Citations (Scopus)

Abstract

E-beam evaporation was used to deposit the titanium oxide films with a thickness of 400 nm on silicon (Si) (100) at room temperature. The effect of oxygen on the surface roughness, composition and chemical states was studied by evaporating the titanium dioxide in the oxygen environment. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and X-ray absorption near-edge spectroscopy (XANES) were used for the analysis.

Original languageEnglish
Pages (from-to)2932-2936
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume18
Issue number6
DOIs
Publication statusPublished - 2000 Nov

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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    Jang, H. K., Whangbo, S. W., Choi, Y. K., Chung, Y. D., Jeong, K., Whang, C. N., Lee, Y. S., Lee, H. S., Choi, J. Y., Kim, G. H., & Kim, T. K. (2000). Titanium oxide films on Si(100) deposited by e-beam evaporation. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 18(6), 2932-2936. https://doi.org/10.1116/1.1312377