Top and back gate molybdenum disulfide transistors coupled for logic and photo-inverter operation

Atiye Pezeshki, Seyed Hossein Hosseini Shokouh, Syed Raza Ali Raza, Jin Sung Kim, Sung Wook Min, Iman Shackery, Seong Chan Jun, Seongil Im

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

We demonstrate an inverter type nanodevice based on 2-dimensional semiconducting molybdenum disulfide (MoS2) nanoflakes. The inverter device was comprised of back-gate and top-gate field-effect transistors (FETs) which work respectively as a load and a driver for a logic inverter in the dark but switch their roles for photo-inverter operation. Our logic inverter shows a relatively high voltage gain of more than 12. When the back-gate FET controls the circuit as a driver to sensitively detect visible light using its open channel, the device effectively operates as a photo-inverter detecting visible photons. Our inverter based on top- and back-gate MoS2 FETs would be quite promising for both logic and photo-sensing applications due to its performance and simple device configuration as well. This journal is

Original languageEnglish
Pages (from-to)8023-8028
Number of pages6
JournalJournal of Materials Chemistry C
Volume2
Issue number38
DOIs
Publication statusPublished - 2014 Oct 14

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Gates (transistor)
Molybdenum
Transistors
Photons
Switches
Networks (circuits)
Electric potential
molybdenum disulfide

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

Cite this

Pezeshki, A., Hosseini Shokouh, S. H., Raza, S. R. A., Kim, J. S., Min, S. W., Shackery, I., ... Im, S. (2014). Top and back gate molybdenum disulfide transistors coupled for logic and photo-inverter operation. Journal of Materials Chemistry C, 2(38), 8023-8028. https://doi.org/10.1039/c4tc01673d
Pezeshki, Atiye ; Hosseini Shokouh, Seyed Hossein ; Raza, Syed Raza Ali ; Kim, Jin Sung ; Min, Sung Wook ; Shackery, Iman ; Jun, Seong Chan ; Im, Seongil. / Top and back gate molybdenum disulfide transistors coupled for logic and photo-inverter operation. In: Journal of Materials Chemistry C. 2014 ; Vol. 2, No. 38. pp. 8023-8028.
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Top and back gate molybdenum disulfide transistors coupled for logic and photo-inverter operation. / Pezeshki, Atiye; Hosseini Shokouh, Seyed Hossein; Raza, Syed Raza Ali; Kim, Jin Sung; Min, Sung Wook; Shackery, Iman; Jun, Seong Chan; Im, Seongil.

In: Journal of Materials Chemistry C, Vol. 2, No. 38, 14.10.2014, p. 8023-8028.

Research output: Contribution to journalArticle

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Pezeshki A, Hosseini Shokouh SH, Raza SRA, Kim JS, Min SW, Shackery I et al. Top and back gate molybdenum disulfide transistors coupled for logic and photo-inverter operation. Journal of Materials Chemistry C. 2014 Oct 14;2(38):8023-8028. https://doi.org/10.1039/c4tc01673d