Top and back gate molybdenum disulfide transistors coupled for logic and photo-inverter operation

Atiye Pezeshki, Seyed Hossein Hosseini Shokouh, Syed Raza Ali Raza, Jin Sung Kim, Sung Wook Min, Iman Shackery, Seong Chan Jun, Seongil Im

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

We demonstrate an inverter type nanodevice based on 2-dimensional semiconducting molybdenum disulfide (MoS2) nanoflakes. The inverter device was comprised of back-gate and top-gate field-effect transistors (FETs) which work respectively as a load and a driver for a logic inverter in the dark but switch their roles for photo-inverter operation. Our logic inverter shows a relatively high voltage gain of more than 12. When the back-gate FET controls the circuit as a driver to sensitively detect visible light using its open channel, the device effectively operates as a photo-inverter detecting visible photons. Our inverter based on top- and back-gate MoS2 FETs would be quite promising for both logic and photo-sensing applications due to its performance and simple device configuration as well. This journal is

Original languageEnglish
Pages (from-to)8023-8028
Number of pages6
JournalJournal of Materials Chemistry C
Volume2
Issue number38
DOIs
Publication statusPublished - 2014 Oct 14

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

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