Abstract
We report on the fabrication of ultraviolet (UV)-sensing top-gate ZnO thin-film transistors (TFTs) with a poly-4-vinylphenol (PVP) polymer gate dielectric on glass substrate. Our top-gate ZnO-TFT showed a field-effect mobility of 0.05 cm2/V s, maximum saturation current of 0.11 μA at a gate bias of 10 V and an on/off ratio of ∼103 in the dark. Under UV illumination with a wavelength of 364 nm the ZnO-TFT exhibited ∼4.7 μA for a drain current (at the same gate bias of 10 V), which is ∼50 times higher than without UV. Such photo-transistor action appeared more pronounced under a depletion regime of 0 V gate bias and the photo-to-dark current ratio was more than about 104. By adopting this high UV-sensitivity, our inverter device with the top-gate ZnO-TFT and a load resistance well demonstrated its optical gating behavior.
| Original language | English |
|---|---|
| Pages (from-to) | 69-73 |
| Number of pages | 5 |
| Journal | Sensors and Actuators, A: Physical |
| Volume | 144 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2008 May 28 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Instrumentation
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering
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Top-gate ZnO thin-film transistors with a polymer dielectric designed for ultraviolet optical gating. / Lee, Kimoon; Choi, Jeong M.; Hwang, D. K.; Oh, Min Suk; Kim, J. K.; Jung, Y.; Oh, K.; Im, Seongil.
In: Sensors and Actuators, A: Physical, Vol. 144, No. 1, 28.05.2008, p. 69-73.Research output: Contribution to journal › Article
TY - JOUR
T1 - Top-gate ZnO thin-film transistors with a polymer dielectric designed for ultraviolet optical gating
AU - Lee, Kimoon
AU - Choi, Jeong M.
AU - Hwang, D. K.
AU - Oh, Min Suk
AU - Kim, J. K.
AU - Jung, Y.
AU - Oh, K.
AU - Im, Seongil
PY - 2008/5/28
Y1 - 2008/5/28
N2 - We report on the fabrication of ultraviolet (UV)-sensing top-gate ZnO thin-film transistors (TFTs) with a poly-4-vinylphenol (PVP) polymer gate dielectric on glass substrate. Our top-gate ZnO-TFT showed a field-effect mobility of 0.05 cm2/V s, maximum saturation current of 0.11 μA at a gate bias of 10 V and an on/off ratio of ∼103 in the dark. Under UV illumination with a wavelength of 364 nm the ZnO-TFT exhibited ∼4.7 μA for a drain current (at the same gate bias of 10 V), which is ∼50 times higher than without UV. Such photo-transistor action appeared more pronounced under a depletion regime of 0 V gate bias and the photo-to-dark current ratio was more than about 104. By adopting this high UV-sensitivity, our inverter device with the top-gate ZnO-TFT and a load resistance well demonstrated its optical gating behavior.
AB - We report on the fabrication of ultraviolet (UV)-sensing top-gate ZnO thin-film transistors (TFTs) with a poly-4-vinylphenol (PVP) polymer gate dielectric on glass substrate. Our top-gate ZnO-TFT showed a field-effect mobility of 0.05 cm2/V s, maximum saturation current of 0.11 μA at a gate bias of 10 V and an on/off ratio of ∼103 in the dark. Under UV illumination with a wavelength of 364 nm the ZnO-TFT exhibited ∼4.7 μA for a drain current (at the same gate bias of 10 V), which is ∼50 times higher than without UV. Such photo-transistor action appeared more pronounced under a depletion regime of 0 V gate bias and the photo-to-dark current ratio was more than about 104. By adopting this high UV-sensitivity, our inverter device with the top-gate ZnO-TFT and a load resistance well demonstrated its optical gating behavior.
UR - http://www.scopus.com/inward/record.url?scp=42949151791&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=42949151791&partnerID=8YFLogxK
U2 - 10.1016/j.sna.2008.01.012
DO - 10.1016/j.sna.2008.01.012
M3 - Article
AN - SCOPUS:42949151791
VL - 144
SP - 69
EP - 73
JO - Sensors and Actuators, A: Physical
JF - Sensors and Actuators, A: Physical
SN - 0924-4247
IS - 1
ER -