Top-gate ZnO thin-film transistors with a polymer dielectric designed for ultraviolet optical gating

Kimoon Lee; Jeong M. Choi; D. K. Hwang; Min Suk Oh; J. K. Kim; Y. Jung; K. Oh; Seongil Im

doi:10.1016/j.sna.2008.01.012

Top-gate ZnO thin-film transistors with a polymer dielectric designed for ultraviolet optical gating

Kimoon Lee, Jeong M. Choi, D. K. Hwang, Min Suk Oh, J. K. Kim, Y. Jung, K. Oh, Seongil Im

Department of Physics

Research output: Contribution to journal › Article

11 Citations (Scopus)

Abstract

We report on the fabrication of ultraviolet (UV)-sensing top-gate ZnO thin-film transistors (TFTs) with a poly-4-vinylphenol (PVP) polymer gate dielectric on glass substrate. Our top-gate ZnO-TFT showed a field-effect mobility of 0.05 cm²/V s, maximum saturation current of 0.11 μA at a gate bias of 10 V and an on/off ratio of ∼10³ in the dark. Under UV illumination with a wavelength of 364 nm the ZnO-TFT exhibited ∼4.7 μA for a drain current (at the same gate bias of 10 V), which is ∼50 times higher than without UV. Such photo-transistor action appeared more pronounced under a depletion regime of 0 V gate bias and the photo-to-dark current ratio was more than about 10⁴. By adopting this high UV-sensitivity, our inverter device with the top-gate ZnO-TFT and a load resistance well demonstrated its optical gating behavior.

Original language	English
Pages (from-to)	69-73
Number of pages	5
Journal	Sensors and Actuators, A: Physical
Volume	144
Issue number	1
DOIs	https://doi.org/10.1016/j.sna.2008.01.012
Publication status	Published - 2008 May 28

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering

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10.1016/j.sna.2008.01.012

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Lee, K., Choi, J. M., Hwang, D. K., Oh, M. S., Kim, J. K., Jung, Y., Oh, K., & Im, S. (2008). Top-gate ZnO thin-film transistors with a polymer dielectric designed for ultraviolet optical gating. Sensors and Actuators, A: Physical, 144(1), 69-73. https://doi.org/10.1016/j.sna.2008.01.012

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abstract = "We report on the fabrication of ultraviolet (UV)-sensing top-gate ZnO thin-film transistors (TFTs) with a poly-4-vinylphenol (PVP) polymer gate dielectric on glass substrate. Our top-gate ZnO-TFT showed a field-effect mobility of 0.05 cm2/V s, maximum saturation current of 0.11 μA at a gate bias of 10 V and an on/off ratio of ∼103 in the dark. Under UV illumination with a wavelength of 364 nm the ZnO-TFT exhibited ∼4.7 μA for a drain current (at the same gate bias of 10 V), which is ∼50 times higher than without UV. Such photo-transistor action appeared more pronounced under a depletion regime of 0 V gate bias and the photo-to-dark current ratio was more than about 104. By adopting this high UV-sensitivity, our inverter device with the top-gate ZnO-TFT and a load resistance well demonstrated its optical gating behavior.",

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AU - Lee, Kimoon

AU - Choi, Jeong M.

AU - Hwang, D. K.

AU - Oh, Min Suk

AU - Kim, J. K.

AU - Jung, Y.

AU - Oh, K.

AU - Im, Seongil

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N2 - We report on the fabrication of ultraviolet (UV)-sensing top-gate ZnO thin-film transistors (TFTs) with a poly-4-vinylphenol (PVP) polymer gate dielectric on glass substrate. Our top-gate ZnO-TFT showed a field-effect mobility of 0.05 cm2/V s, maximum saturation current of 0.11 μA at a gate bias of 10 V and an on/off ratio of ∼103 in the dark. Under UV illumination with a wavelength of 364 nm the ZnO-TFT exhibited ∼4.7 μA for a drain current (at the same gate bias of 10 V), which is ∼50 times higher than without UV. Such photo-transistor action appeared more pronounced under a depletion regime of 0 V gate bias and the photo-to-dark current ratio was more than about 104. By adopting this high UV-sensitivity, our inverter device with the top-gate ZnO-TFT and a load resistance well demonstrated its optical gating behavior.

AB - We report on the fabrication of ultraviolet (UV)-sensing top-gate ZnO thin-film transistors (TFTs) with a poly-4-vinylphenol (PVP) polymer gate dielectric on glass substrate. Our top-gate ZnO-TFT showed a field-effect mobility of 0.05 cm2/V s, maximum saturation current of 0.11 μA at a gate bias of 10 V and an on/off ratio of ∼103 in the dark. Under UV illumination with a wavelength of 364 nm the ZnO-TFT exhibited ∼4.7 μA for a drain current (at the same gate bias of 10 V), which is ∼50 times higher than without UV. Such photo-transistor action appeared more pronounced under a depletion regime of 0 V gate bias and the photo-to-dark current ratio was more than about 104. By adopting this high UV-sensitivity, our inverter device with the top-gate ZnO-TFT and a load resistance well demonstrated its optical gating behavior.

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