Topological insulator bismuth selenide grown on black phosphorus for sensitive broadband photodetection

Dae Kyoung Kim, Seok Bo Hong, Jonghoon Kim, Mann Ho Cho

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3 Citations (Scopus)


The photovoltaic characteristics of high-quality Bi2Se3 grown on black phosphorus (BP) heterostructure via modulated elemental reactants (MER, annealed in situ at 220 °C for 20 min in a vacuum of 10-9 torr) growth of a Bi2Se3 topological insulator (TI) film on an exfoliated BP two-dimensional (2D) nanosheet was investigated. The Bi2Se3/BP heterostructure showed high-efficiency photocharacteristics (responsivity: 12.1 mA W-1, rise time: 1.3 ms, and broadband detection range: λ = 350-950 nm), which are attributed to the narrow band gap of the bulk state and mobility of the Dirac surface state. Moreover, the Bi2Se3/BP heterostructure can produce heterojunctions in the sharp interface region, thereby resulting in the contribution of a strong built-in electric field and photoexcited carrier tunnel through the interactive interfacial region at the TI/2D heterostructure based on the photovoltaic device. This work demonstrates practical photovoltaic applications, as well as the integration of such TIs on 2D materials, which can offer great opportunities for the realization of next-generation optoelectronic devices.

Original languageEnglish
Pages (from-to)15150-15157
Number of pages8
JournalJournal of Materials Chemistry C
Issue number42
Publication statusPublished - 2021 Nov 14

Bibliographical note

Funding Information:
The authors acknowledge financial support provided by the National Research Foundation of Korea (NRF) grant funded by the Korea government (No. 2020R1I1A1A01072546 and 2017R1A5A1014862 for SRC program vdWMRC center).

Publisher Copyright:
© 2021 The Royal Society of Chemistry.

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry


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