Toward the surface preparation of ingaas for the future cmos integration

Sangwoo Lim

doi:10.4028/www.scientific.net/SSP.282.39

Toward the surface preparation of ingaas for the future cmos integration

Sangwoo Lim

Department of Chemical and Biomolecular Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The integration of III-V and Ge materials on Si surface causes many issues with complexity such as lattice mismatch with silicon. In particular, the surface preparation and passivation of InGaAs is very challenging, because the formation of InGaAs/high-K interface is important, but not well understood. For the systematical study of InGaAs surface during wet processes, the effect of various wet etching processes on the surfaces of binary III-V compound semiconductors (GaAs, InAs, GaSb and InSb) was studied from the viewpoints of surface oxidation, material loss (dissolution), and passivation. Based on that, further effort to understand the surface reactions on ternary InGaAs compound semiconductor was made. In addition, process sequential effect on the InGaAs surface was investigated.

Original language	English
Title of host publication	Ultra Clean Processing of Semiconductor Surfaces XIV
Editors	Marc Heyns, Marc Meuris, Marc Meuris, Paul Mertens
Publisher	Trans Tech Publications Ltd
Pages	39-42
Number of pages	4
ISBN (Print)	9783035714173
DOIs	https://doi.org/10.4028/www.scientific.net/SSP.282.39
Publication status	Published - 2018 Jan 1
Event	14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018 - Leuven, Belgium Duration: 2018 Sep 3 → 2018 Sep 5

Publication series

Name	Solid State Phenomena
Volume	282 SSP
ISSN (Electronic)	1662-9779

Other

Other	14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018
Country	Belgium
City	Leuven
Period	18/9/3 → 18/9/5

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Materials Science(all)
Condensed Matter Physics

Access to Document

10.4028/www.scientific.net/SSP.282.39

Fingerprint Dive into the research topics of 'Toward the surface preparation of ingaas for the future cmos integration'. Together they form a unique fingerprint.

Cite this

Lim, S. (2018). Toward the surface preparation of ingaas for the future cmos integration. In M. Heyns, M. Meuris, M. Meuris, & P. Mertens (Eds.), Ultra Clean Processing of Semiconductor Surfaces XIV (pp. 39-42). (Solid State Phenomena; Vol. 282 SSP). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.282.39

@inproceedings{17f85651cf51431bad50d27508731b03,

title = "Toward the surface preparation of ingaas for the future cmos integration",

abstract = "The integration of III-V and Ge materials on Si surface causes many issues with complexity such as lattice mismatch with silicon. In particular, the surface preparation and passivation of InGaAs is very challenging, because the formation of InGaAs/high-K interface is important, but not well understood. For the systematical study of InGaAs surface during wet processes, the effect of various wet etching processes on the surfaces of binary III-V compound semiconductors (GaAs, InAs, GaSb and InSb) was studied from the viewpoints of surface oxidation, material loss (dissolution), and passivation. Based on that, further effort to understand the surface reactions on ternary InGaAs compound semiconductor was made. In addition, process sequential effect on the InGaAs surface was investigated.",

author = "Sangwoo Lim",

year = "2018",

month = jan,

day = "1",

doi = "10.4028/www.scientific.net/SSP.282.39",

language = "English",

isbn = "9783035714173",

series = "Solid State Phenomena",

publisher = "Trans Tech Publications Ltd",

pages = "39--42",

editor = "Marc Heyns and Marc Meuris and Marc Meuris and Paul Mertens",

booktitle = "Ultra Clean Processing of Semiconductor Surfaces XIV",

note = "14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018 ; Conference date: 03-09-2018 Through 05-09-2018",

}

Lim, S 2018, Toward the surface preparation of ingaas for the future cmos integration. in M Heyns, M Meuris, M Meuris & P Mertens (eds), Ultra Clean Processing of Semiconductor Surfaces XIV. Solid State Phenomena, vol. 282 SSP, Trans Tech Publications Ltd, pp. 39-42, 14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018, Leuven, Belgium, 18/9/3. https://doi.org/10.4028/www.scientific.net/SSP.282.39

Toward the surface preparation of ingaas for the future cmos integration. / Lim, Sangwoo.

Ultra Clean Processing of Semiconductor Surfaces XIV. ed. / Marc Heyns; Marc Meuris; Marc Meuris; Paul Mertens. Trans Tech Publications Ltd, 2018. p. 39-42 (Solid State Phenomena; Vol. 282 SSP).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Toward the surface preparation of ingaas for the future cmos integration

AU - Lim, Sangwoo

PY - 2018/1/1

Y1 - 2018/1/1

N2 - The integration of III-V and Ge materials on Si surface causes many issues with complexity such as lattice mismatch with silicon. In particular, the surface preparation and passivation of InGaAs is very challenging, because the formation of InGaAs/high-K interface is important, but not well understood. For the systematical study of InGaAs surface during wet processes, the effect of various wet etching processes on the surfaces of binary III-V compound semiconductors (GaAs, InAs, GaSb and InSb) was studied from the viewpoints of surface oxidation, material loss (dissolution), and passivation. Based on that, further effort to understand the surface reactions on ternary InGaAs compound semiconductor was made. In addition, process sequential effect on the InGaAs surface was investigated.

AB - The integration of III-V and Ge materials on Si surface causes many issues with complexity such as lattice mismatch with silicon. In particular, the surface preparation and passivation of InGaAs is very challenging, because the formation of InGaAs/high-K interface is important, but not well understood. For the systematical study of InGaAs surface during wet processes, the effect of various wet etching processes on the surfaces of binary III-V compound semiconductors (GaAs, InAs, GaSb and InSb) was studied from the viewpoints of surface oxidation, material loss (dissolution), and passivation. Based on that, further effort to understand the surface reactions on ternary InGaAs compound semiconductor was made. In addition, process sequential effect on the InGaAs surface was investigated.

UR - http://www.scopus.com/inward/record.url?scp=85055413429&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85055413429&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/SSP.282.39

DO - 10.4028/www.scientific.net/SSP.282.39

M3 - Conference contribution

AN - SCOPUS:85055413429

SN - 9783035714173

T3 - Solid State Phenomena

SP - 39

EP - 42

BT - Ultra Clean Processing of Semiconductor Surfaces XIV

A2 - Heyns, Marc

A2 - Meuris, Marc

A2 - Mertens, Paul

PB - Trans Tech Publications Ltd

T2 - 14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018

Y2 - 3 September 2018 through 5 September 2018

ER -