Toward the surface preparation of ingaas for the future cmos integration

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The integration of III-V and Ge materials on Si surface causes many issues with complexity such as lattice mismatch with silicon. In particular, the surface preparation and passivation of InGaAs is very challenging, because the formation of InGaAs/high-K interface is important, but not well understood. For the systematical study of InGaAs surface during wet processes, the effect of various wet etching processes on the surfaces of binary III-V compound semiconductors (GaAs, InAs, GaSb and InSb) was studied from the viewpoints of surface oxidation, material loss (dissolution), and passivation. Based on that, further effort to understand the surface reactions on ternary InGaAs compound semiconductor was made. In addition, process sequential effect on the InGaAs surface was investigated.

Original languageEnglish
Title of host publicationUltra Clean Processing of Semiconductor Surfaces XIV
EditorsMarc Heyns, Marc Meuris, Marc Meuris, Paul Mertens
PublisherTrans Tech Publications Ltd
Pages39-42
Number of pages4
ISBN (Print)9783035714173
DOIs
Publication statusPublished - 2018 Jan 1
Event14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018 - Leuven, Belgium
Duration: 2018 Sep 32018 Sep 5

Publication series

NameSolid State Phenomena
Volume282 SSP
ISSN (Electronic)1662-9779

Other

Other14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018
CountryBelgium
CityLeuven
Period18/9/318/9/5

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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  • Cite this

    Lim, S. (2018). Toward the surface preparation of ingaas for the future cmos integration. In M. Heyns, M. Meuris, M. Meuris, & P. Mertens (Eds.), Ultra Clean Processing of Semiconductor Surfaces XIV (pp. 39-42). (Solid State Phenomena; Vol. 282 SSP). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.282.39