Toward the surface preparation of ingaas for the future cmos integration

Sangwoo Lim

doi:10.4028/www.scientific.net/SSP.282.39

Toward the surface preparation of ingaas for the future cmos integration

Sangwoo Lim

Department of Chemical and Biomolecular Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The integration of III-V and Ge materials on Si surface causes many issues with complexity such as lattice mismatch with silicon. In particular, the surface preparation and passivation of InGaAs is very challenging, because the formation of InGaAs/high-K interface is important, but not well understood. For the systematical study of InGaAs surface during wet processes, the effect of various wet etching processes on the surfaces of binary III-V compound semiconductors (GaAs, InAs, GaSb and InSb) was studied from the viewpoints of surface oxidation, material loss (dissolution), and passivation. Based on that, further effort to understand the surface reactions on ternary InGaAs compound semiconductor was made. In addition, process sequential effect on the InGaAs surface was investigated.

Original language	English
Title of host publication	Ultra Clean Processing of Semiconductor Surfaces XIV
Editors	Paul Mertens, Marc Meuris, Marc Meuris, Marc Heyns
Publisher	Trans Tech Publications Ltd
Pages	39-42
Number of pages	4
ISBN (Print)	9783035714173
DOIs	https://doi.org/10.4028/www.scientific.net/SSP.282.39
Publication status	Published - 2018
Event	14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018 - Leuven, Belgium Duration: 2018 Sep 3 → 2018 Sep 5

Publication series

Name	Solid State Phenomena
Volume	282 SSP
ISSN (Print)	1012-0394
ISSN (Electronic)	1662-9779

Other

Other	14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018
Country	Belgium
City	Leuven
Period	18/9/3 → 18/9/5

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Materials Science(all)
Condensed Matter Physics

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Cite this

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title = "Toward the surface preparation of ingaas for the future cmos integration",

abstract = "The integration of III-V and Ge materials on Si surface causes many issues with complexity such as lattice mismatch with silicon. In particular, the surface preparation and passivation of InGaAs is very challenging, because the formation of InGaAs/high-K interface is important, but not well understood. For the systematical study of InGaAs surface during wet processes, the effect of various wet etching processes on the surfaces of binary III-V compound semiconductors (GaAs, InAs, GaSb and InSb) was studied from the viewpoints of surface oxidation, material loss (dissolution), and passivation. Based on that, further effort to understand the surface reactions on ternary InGaAs compound semiconductor was made. In addition, process sequential effect on the InGaAs surface was investigated.",

author = "Sangwoo Lim",

note = "Publisher Copyright: {\textcopyright} 2018 Trans Tech Publications, Switzerland. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018 ; Conference date: 03-09-2018 Through 05-09-2018",

year = "2018",

doi = "10.4028/www.scientific.net/SSP.282.39",

language = "English",

isbn = "9783035714173",

series = "Solid State Phenomena",

publisher = "Trans Tech Publications Ltd",

pages = "39--42",

editor = "Paul Mertens and Marc Meuris and Marc Meuris and Marc Heyns",

booktitle = "Ultra Clean Processing of Semiconductor Surfaces XIV",

}

Lim, S 2018, Toward the surface preparation of ingaas for the future cmos integration. in P Mertens, M Meuris, M Meuris & M Heyns (eds), Ultra Clean Processing of Semiconductor Surfaces XIV. Solid State Phenomena, vol. 282 SSP, Trans Tech Publications Ltd, pp. 39-42, 14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018, Leuven, Belgium, 18/9/3. https://doi.org/10.4028/www.scientific.net/SSP.282.39

Toward the surface preparation of ingaas for the future cmos integration. / Lim, Sangwoo.

Ultra Clean Processing of Semiconductor Surfaces XIV. ed. / Paul Mertens; Marc Meuris; Marc Meuris; Marc Heyns. Trans Tech Publications Ltd, 2018. p. 39-42 (Solid State Phenomena; Vol. 282 SSP).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - The integration of III-V and Ge materials on Si surface causes many issues with complexity such as lattice mismatch with silicon. In particular, the surface preparation and passivation of InGaAs is very challenging, because the formation of InGaAs/high-K interface is important, but not well understood. For the systematical study of InGaAs surface during wet processes, the effect of various wet etching processes on the surfaces of binary III-V compound semiconductors (GaAs, InAs, GaSb and InSb) was studied from the viewpoints of surface oxidation, material loss (dissolution), and passivation. Based on that, further effort to understand the surface reactions on ternary InGaAs compound semiconductor was made. In addition, process sequential effect on the InGaAs surface was investigated.

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