TY - GEN
T1 - Toward the surface preparation of ingaas for the future cmos integration
AU - Lim, Sangwoo
N1 - Publisher Copyright:
© 2018 Trans Tech Publications, Switzerland.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2018
Y1 - 2018
N2 - The integration of III-V and Ge materials on Si surface causes many issues with complexity such as lattice mismatch with silicon. In particular, the surface preparation and passivation of InGaAs is very challenging, because the formation of InGaAs/high-K interface is important, but not well understood. For the systematical study of InGaAs surface during wet processes, the effect of various wet etching processes on the surfaces of binary III-V compound semiconductors (GaAs, InAs, GaSb and InSb) was studied from the viewpoints of surface oxidation, material loss (dissolution), and passivation. Based on that, further effort to understand the surface reactions on ternary InGaAs compound semiconductor was made. In addition, process sequential effect on the InGaAs surface was investigated.
AB - The integration of III-V and Ge materials on Si surface causes many issues with complexity such as lattice mismatch with silicon. In particular, the surface preparation and passivation of InGaAs is very challenging, because the formation of InGaAs/high-K interface is important, but not well understood. For the systematical study of InGaAs surface during wet processes, the effect of various wet etching processes on the surfaces of binary III-V compound semiconductors (GaAs, InAs, GaSb and InSb) was studied from the viewpoints of surface oxidation, material loss (dissolution), and passivation. Based on that, further effort to understand the surface reactions on ternary InGaAs compound semiconductor was made. In addition, process sequential effect on the InGaAs surface was investigated.
UR - http://www.scopus.com/inward/record.url?scp=85055413429&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85055413429&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/SSP.282.39
DO - 10.4028/www.scientific.net/SSP.282.39
M3 - Conference contribution
AN - SCOPUS:85055413429
SN - 9783035714173
T3 - Solid State Phenomena
SP - 39
EP - 42
BT - Ultra Clean Processing of Semiconductor Surfaces XIV
A2 - Mertens, Paul
A2 - Meuris, Marc
A2 - Meuris, Marc
A2 - Heyns, Marc
PB - Trans Tech Publications Ltd
T2 - 14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018
Y2 - 3 September 2018 through 5 September 2018
ER -