Toward the surface preparation of ingaas for the future cmos integration

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The integration of III-V and Ge materials on Si surface causes many issues with complexity such as lattice mismatch with silicon. In particular, the surface preparation and passivation of InGaAs is very challenging, because the formation of InGaAs/high-K interface is important, but not well understood. For the systematical study of InGaAs surface during wet processes, the effect of various wet etching processes on the surfaces of binary III-V compound semiconductors (GaAs, InAs, GaSb and InSb) was studied from the viewpoints of surface oxidation, material loss (dissolution), and passivation. Based on that, further effort to understand the surface reactions on ternary InGaAs compound semiconductor was made. In addition, process sequential effect on the InGaAs surface was investigated.

Original languageEnglish
Title of host publicationUltra Clean Processing of Semiconductor Surfaces XIV
EditorsMarc Heyns, Marc Meuris, Marc Meuris, Paul Mertens
PublisherTrans Tech Publications Ltd
Pages39-42
Number of pages4
ISBN (Print)9783035714173
DOIs
Publication statusPublished - 2018 Jan 1
Event14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018 - Leuven, Belgium
Duration: 2018 Sep 32018 Sep 5

Publication series

NameSolid State Phenomena
Volume282 SSP
ISSN (Electronic)1662-9779

Other

Other14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018
CountryBelgium
CityLeuven
Period18/9/318/9/5

Fingerprint

preparation
Passivation
passivity
Lattice mismatch
Wet etching
Surface reactions
Silicon
surface reactions
dissolving
Dissolution
etching
Semiconductor materials
Oxidation
oxidation
causes
silicon

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Lim, S. (2018). Toward the surface preparation of ingaas for the future cmos integration. In M. Heyns, M. Meuris, M. Meuris, & P. Mertens (Eds.), Ultra Clean Processing of Semiconductor Surfaces XIV (pp. 39-42). (Solid State Phenomena; Vol. 282 SSP). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.282.39
Lim, Sangwoo. / Toward the surface preparation of ingaas for the future cmos integration. Ultra Clean Processing of Semiconductor Surfaces XIV. editor / Marc Heyns ; Marc Meuris ; Marc Meuris ; Paul Mertens. Trans Tech Publications Ltd, 2018. pp. 39-42 (Solid State Phenomena).
@inproceedings{17f85651cf51431bad50d27508731b03,
title = "Toward the surface preparation of ingaas for the future cmos integration",
abstract = "The integration of III-V and Ge materials on Si surface causes many issues with complexity such as lattice mismatch with silicon. In particular, the surface preparation and passivation of InGaAs is very challenging, because the formation of InGaAs/high-K interface is important, but not well understood. For the systematical study of InGaAs surface during wet processes, the effect of various wet etching processes on the surfaces of binary III-V compound semiconductors (GaAs, InAs, GaSb and InSb) was studied from the viewpoints of surface oxidation, material loss (dissolution), and passivation. Based on that, further effort to understand the surface reactions on ternary InGaAs compound semiconductor was made. In addition, process sequential effect on the InGaAs surface was investigated.",
author = "Sangwoo Lim",
year = "2018",
month = "1",
day = "1",
doi = "10.4028/www.scientific.net/SSP.282.39",
language = "English",
isbn = "9783035714173",
series = "Solid State Phenomena",
publisher = "Trans Tech Publications Ltd",
pages = "39--42",
editor = "Marc Heyns and Marc Meuris and Marc Meuris and Paul Mertens",
booktitle = "Ultra Clean Processing of Semiconductor Surfaces XIV",

}

Lim, S 2018, Toward the surface preparation of ingaas for the future cmos integration. in M Heyns, M Meuris, M Meuris & P Mertens (eds), Ultra Clean Processing of Semiconductor Surfaces XIV. Solid State Phenomena, vol. 282 SSP, Trans Tech Publications Ltd, pp. 39-42, 14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018, Leuven, Belgium, 18/9/3. https://doi.org/10.4028/www.scientific.net/SSP.282.39

Toward the surface preparation of ingaas for the future cmos integration. / Lim, Sangwoo.

Ultra Clean Processing of Semiconductor Surfaces XIV. ed. / Marc Heyns; Marc Meuris; Marc Meuris; Paul Mertens. Trans Tech Publications Ltd, 2018. p. 39-42 (Solid State Phenomena; Vol. 282 SSP).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Toward the surface preparation of ingaas for the future cmos integration

AU - Lim, Sangwoo

PY - 2018/1/1

Y1 - 2018/1/1

N2 - The integration of III-V and Ge materials on Si surface causes many issues with complexity such as lattice mismatch with silicon. In particular, the surface preparation and passivation of InGaAs is very challenging, because the formation of InGaAs/high-K interface is important, but not well understood. For the systematical study of InGaAs surface during wet processes, the effect of various wet etching processes on the surfaces of binary III-V compound semiconductors (GaAs, InAs, GaSb and InSb) was studied from the viewpoints of surface oxidation, material loss (dissolution), and passivation. Based on that, further effort to understand the surface reactions on ternary InGaAs compound semiconductor was made. In addition, process sequential effect on the InGaAs surface was investigated.

AB - The integration of III-V and Ge materials on Si surface causes many issues with complexity such as lattice mismatch with silicon. In particular, the surface preparation and passivation of InGaAs is very challenging, because the formation of InGaAs/high-K interface is important, but not well understood. For the systematical study of InGaAs surface during wet processes, the effect of various wet etching processes on the surfaces of binary III-V compound semiconductors (GaAs, InAs, GaSb and InSb) was studied from the viewpoints of surface oxidation, material loss (dissolution), and passivation. Based on that, further effort to understand the surface reactions on ternary InGaAs compound semiconductor was made. In addition, process sequential effect on the InGaAs surface was investigated.

UR - http://www.scopus.com/inward/record.url?scp=85055413429&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85055413429&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/SSP.282.39

DO - 10.4028/www.scientific.net/SSP.282.39

M3 - Conference contribution

AN - SCOPUS:85055413429

SN - 9783035714173

T3 - Solid State Phenomena

SP - 39

EP - 42

BT - Ultra Clean Processing of Semiconductor Surfaces XIV

A2 - Heyns, Marc

A2 - Meuris, Marc

A2 - Meuris, Marc

A2 - Mertens, Paul

PB - Trans Tech Publications Ltd

ER -

Lim S. Toward the surface preparation of ingaas for the future cmos integration. In Heyns M, Meuris M, Meuris M, Mertens P, editors, Ultra Clean Processing of Semiconductor Surfaces XIV. Trans Tech Publications Ltd. 2018. p. 39-42. (Solid State Phenomena). https://doi.org/10.4028/www.scientific.net/SSP.282.39