Abstract
The integration of III-V and Ge materials on Si surface causes many issues with complexity such as lattice mismatch with silicon. In particular, the surface preparation and passivation of InGaAs is very challenging, because the formation of InGaAs/high-K interface is important, but not well understood. For the systematical study of InGaAs surface during wet processes, the effect of various wet etching processes on the surfaces of binary III-V compound semiconductors (GaAs, InAs, GaSb and InSb) was studied from the viewpoints of surface oxidation, material loss (dissolution), and passivation. Based on that, further effort to understand the surface reactions on ternary InGaAs compound semiconductor was made. In addition, process sequential effect on the InGaAs surface was investigated.
| Original language | English |
|---|---|
| Title of host publication | Ultra Clean Processing of Semiconductor Surfaces XIV |
| Editors | Marc Heyns, Marc Meuris, Marc Meuris, Paul Mertens |
| Publisher | Trans Tech Publications Ltd |
| Pages | 39-42 |
| Number of pages | 4 |
| ISBN (Print) | 9783035714173 |
| DOIs | |
| Publication status | Published - 2018 Jan 1 |
| Event | 14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018 - Leuven, Belgium Duration: 2018 Sep 3 → 2018 Sep 5 |
Publication series
| Name | Solid State Phenomena |
|---|---|
| Volume | 282 SSP |
| ISSN (Electronic) | 1662-9779 |
Other
| Other | 14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2018 |
|---|---|
| Country | Belgium |
| City | Leuven |
| Period | 18/9/3 → 18/9/5 |
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All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Materials Science(all)
- Condensed Matter Physics
Cite this
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Toward the surface preparation of ingaas for the future cmos integration. / Lim, Sangwoo.
Ultra Clean Processing of Semiconductor Surfaces XIV. ed. / Marc Heyns; Marc Meuris; Marc Meuris; Paul Mertens. Trans Tech Publications Ltd, 2018. p. 39-42 (Solid State Phenomena; Vol. 282 SSP).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Toward the surface preparation of ingaas for the future cmos integration
AU - Lim, Sangwoo
PY - 2018/1/1
Y1 - 2018/1/1
N2 - The integration of III-V and Ge materials on Si surface causes many issues with complexity such as lattice mismatch with silicon. In particular, the surface preparation and passivation of InGaAs is very challenging, because the formation of InGaAs/high-K interface is important, but not well understood. For the systematical study of InGaAs surface during wet processes, the effect of various wet etching processes on the surfaces of binary III-V compound semiconductors (GaAs, InAs, GaSb and InSb) was studied from the viewpoints of surface oxidation, material loss (dissolution), and passivation. Based on that, further effort to understand the surface reactions on ternary InGaAs compound semiconductor was made. In addition, process sequential effect on the InGaAs surface was investigated.
AB - The integration of III-V and Ge materials on Si surface causes many issues with complexity such as lattice mismatch with silicon. In particular, the surface preparation and passivation of InGaAs is very challenging, because the formation of InGaAs/high-K interface is important, but not well understood. For the systematical study of InGaAs surface during wet processes, the effect of various wet etching processes on the surfaces of binary III-V compound semiconductors (GaAs, InAs, GaSb and InSb) was studied from the viewpoints of surface oxidation, material loss (dissolution), and passivation. Based on that, further effort to understand the surface reactions on ternary InGaAs compound semiconductor was made. In addition, process sequential effect on the InGaAs surface was investigated.
UR - http://www.scopus.com/inward/record.url?scp=85055413429&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85055413429&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/SSP.282.39
DO - 10.4028/www.scientific.net/SSP.282.39
M3 - Conference contribution
AN - SCOPUS:85055413429
SN - 9783035714173
T3 - Solid State Phenomena
SP - 39
EP - 42
BT - Ultra Clean Processing of Semiconductor Surfaces XIV
A2 - Heyns, Marc
A2 - Meuris, Marc
A2 - Meuris, Marc
A2 - Mertens, Paul
PB - Trans Tech Publications Ltd
ER -