Trade-off relationship of size and density of platinum nanocrystal in nonvolatile memory characteristics

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The replacement of metal nanocrystal (NC)-based nonvolatile memories (NVMs) with polycrystalline silicon floating-gate memories is very attractive, since they demonstrate superior capability of charge localization and a reduction in cell-to-cell interference. Varying the size (ranging from 15.1 to 55.2 nm) and density (from 5.6 × 1011 to 3.2 × 1010cm -2) of the metal NC affects the entire memory properties such as the charging/discharging process, retention characteristic, and charge storage capability. Here, we investigated the effects of the size and density of platinum (Pt) NCs on the aforementioned memory characteristics by fabricating Pt-NC-embedded metal oxide semiconductor (MOS) capacitors using a direct self-assemble method. The flatband voltage shift, a measure of charge storage capability for NC-based NVMs, increased from 5.75 to 13.05 V as the mean size of the NCs was varied from 15.1 to 55.2 nm, which was relatively higher than that of other NC-based NVMs. Our studies revealed that the flatband voltage shift depends on not only the size and density of the NCs, but also the tunneling probability of the electrons, which is closely related to the applied electric field at a tunneling oxide. The relationships among the flatband voltage shift, the size and density of the NCs, and the applied electric field, which are revealed in this study, can be generally applicable to other NVMs based on various metal and semiconducting NCs.

Original languageEnglish
Pages (from-to)1040031-1040035
Number of pages5
JournalJapanese journal of applied physics
Volume49
Issue number10
DOIs
Publication statusPublished - 2010 Oct 1

Fingerprint

Nanocrystals
Platinum
nanocrystals
platinum
Data storage equipment
Metals
shift
Electric potential
electric potential
Electric fields
metals
electric fields
cells
Polysilicon
metal oxide semiconductors
floating
charging
capacitors
Capacitors
interference

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

@article{2012ec64b8c74158a5d815b028faa205,
title = "Trade-off relationship of size and density of platinum nanocrystal in nonvolatile memory characteristics",
abstract = "The replacement of metal nanocrystal (NC)-based nonvolatile memories (NVMs) with polycrystalline silicon floating-gate memories is very attractive, since they demonstrate superior capability of charge localization and a reduction in cell-to-cell interference. Varying the size (ranging from 15.1 to 55.2 nm) and density (from 5.6 × 1011 to 3.2 × 1010cm -2) of the metal NC affects the entire memory properties such as the charging/discharging process, retention characteristic, and charge storage capability. Here, we investigated the effects of the size and density of platinum (Pt) NCs on the aforementioned memory characteristics by fabricating Pt-NC-embedded metal oxide semiconductor (MOS) capacitors using a direct self-assemble method. The flatband voltage shift, a measure of charge storage capability for NC-based NVMs, increased from 5.75 to 13.05 V as the mean size of the NCs was varied from 15.1 to 55.2 nm, which was relatively higher than that of other NC-based NVMs. Our studies revealed that the flatband voltage shift depends on not only the size and density of the NCs, but also the tunneling probability of the electrons, which is closely related to the applied electric field at a tunneling oxide. The relationships among the flatband voltage shift, the size and density of the NCs, and the applied electric field, which are revealed in this study, can be generally applicable to other NVMs based on various metal and semiconducting NCs.",
author = "Jungmok Seo and Taeyoon Lee",
year = "2010",
month = "10",
day = "1",
doi = "10.1143/JJAP.49.104003",
language = "English",
volume = "49",
pages = "1040031--1040035",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "10",

}

Trade-off relationship of size and density of platinum nanocrystal in nonvolatile memory characteristics. / Seo, Jungmok; Lee, Taeyoon.

In: Japanese journal of applied physics, Vol. 49, No. 10, 01.10.2010, p. 1040031-1040035.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Trade-off relationship of size and density of platinum nanocrystal in nonvolatile memory characteristics

AU - Seo, Jungmok

AU - Lee, Taeyoon

PY - 2010/10/1

Y1 - 2010/10/1

N2 - The replacement of metal nanocrystal (NC)-based nonvolatile memories (NVMs) with polycrystalline silicon floating-gate memories is very attractive, since they demonstrate superior capability of charge localization and a reduction in cell-to-cell interference. Varying the size (ranging from 15.1 to 55.2 nm) and density (from 5.6 × 1011 to 3.2 × 1010cm -2) of the metal NC affects the entire memory properties such as the charging/discharging process, retention characteristic, and charge storage capability. Here, we investigated the effects of the size and density of platinum (Pt) NCs on the aforementioned memory characteristics by fabricating Pt-NC-embedded metal oxide semiconductor (MOS) capacitors using a direct self-assemble method. The flatband voltage shift, a measure of charge storage capability for NC-based NVMs, increased from 5.75 to 13.05 V as the mean size of the NCs was varied from 15.1 to 55.2 nm, which was relatively higher than that of other NC-based NVMs. Our studies revealed that the flatband voltage shift depends on not only the size and density of the NCs, but also the tunneling probability of the electrons, which is closely related to the applied electric field at a tunneling oxide. The relationships among the flatband voltage shift, the size and density of the NCs, and the applied electric field, which are revealed in this study, can be generally applicable to other NVMs based on various metal and semiconducting NCs.

AB - The replacement of metal nanocrystal (NC)-based nonvolatile memories (NVMs) with polycrystalline silicon floating-gate memories is very attractive, since they demonstrate superior capability of charge localization and a reduction in cell-to-cell interference. Varying the size (ranging from 15.1 to 55.2 nm) and density (from 5.6 × 1011 to 3.2 × 1010cm -2) of the metal NC affects the entire memory properties such as the charging/discharging process, retention characteristic, and charge storage capability. Here, we investigated the effects of the size and density of platinum (Pt) NCs on the aforementioned memory characteristics by fabricating Pt-NC-embedded metal oxide semiconductor (MOS) capacitors using a direct self-assemble method. The flatband voltage shift, a measure of charge storage capability for NC-based NVMs, increased from 5.75 to 13.05 V as the mean size of the NCs was varied from 15.1 to 55.2 nm, which was relatively higher than that of other NC-based NVMs. Our studies revealed that the flatband voltage shift depends on not only the size and density of the NCs, but also the tunneling probability of the electrons, which is closely related to the applied electric field at a tunneling oxide. The relationships among the flatband voltage shift, the size and density of the NCs, and the applied electric field, which are revealed in this study, can be generally applicable to other NVMs based on various metal and semiconducting NCs.

UR - http://www.scopus.com/inward/record.url?scp=78650101568&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78650101568&partnerID=8YFLogxK

U2 - 10.1143/JJAP.49.104003

DO - 10.1143/JJAP.49.104003

M3 - Article

VL - 49

SP - 1040031

EP - 1040035

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 10

ER -