Analyzed herein is the effect of different germanium (Ge) concentrations on negative bias temperature instability (NBTI) and channel hot carrier (CHC) degradations in high-performance Si1 - xGex pMOSFETs. It is shown that higher concentrations result in less NBTI degradation due to the increased barrier height between the SiGe and high- κ dielectric interface, but it causes greater CHC degradation due to the decreased channel bandgap with higher Ge concentrations. Therefore, the tradeoff between NBTI and HC degradations for different Ge concentrations should be considered when developing high-performance Si1 - xGex pMOSFETs.
Bibliographical noteFunding Information:
Manuscript received April 18, 2010; revised August 10, 2010; accepted August 22, 2010. Date of publication October 7, 2010; date of current version October 22, 2010. This work was supported in part by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) under Grant KRF-2007-612-D00107 and in part by the Ministry of Knowledge Economy and the Korea Institute for Advancement in Technology through the Workforce Development Program in Strategic Technology. The review of this letter was arranged by Editor C.-P. Chang.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering