Transfer-printed thin film metal electrodes for high-performance ferroelectric P(VDF-TrFE) devices

Donyoung Kim, Dahl-Young Khang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Electrodes formation method has been found to be very important in electronic devices using ferroelectric P(VDF-TrFE) copolymer. Depending on the deposition system used, vacuum-based deposition methods such as e-beam or thermal evaporation of metal electrodes has resulted in the performance deterioration, due to damages on the fragile organic surface by highly energetic particles such as intensive short-wavelength radiation, secondary electrons, etc. On the other hand, the transfer-printing of electrodes, which is formed on other substrates, onto the organic surface does not involve any such damages, leading to high-performance devices. Further, the transfer-printing process allows additional advantages of electrode surface tailoring or device fabrication on non-flat micro-rough surfaces. The proposed technique has led to much better performance of InGaZnO-based non-volatile memory transistors, compared to devices based on the direct evaporation of metal electrode. Transfer-printing of electrodes, instead of direct vacuum-based deposition, may lead to higher performing devices based on other organic electronic materials.

Original languageEnglish
Pages (from-to)2491-2495
Number of pages5
JournalPolymer
Volume55
Issue number10
DOIs
Publication statusPublished - 2014 May 13

Fingerprint

Ferroelectric materials
Metals
Thin films
Electrodes
Printing
Ferroelectric devices
Vacuum
Thermal evaporation
Deterioration
Transistors
Evaporation
Copolymers
Radiation
Data storage equipment
Fabrication
Wavelength
Electrons
Substrates

All Science Journal Classification (ASJC) codes

  • Organic Chemistry
  • Polymers and Plastics

Cite this

@article{fe46b61af9784993a3989086c5440596,
title = "Transfer-printed thin film metal electrodes for high-performance ferroelectric P(VDF-TrFE) devices",
abstract = "Electrodes formation method has been found to be very important in electronic devices using ferroelectric P(VDF-TrFE) copolymer. Depending on the deposition system used, vacuum-based deposition methods such as e-beam or thermal evaporation of metal electrodes has resulted in the performance deterioration, due to damages on the fragile organic surface by highly energetic particles such as intensive short-wavelength radiation, secondary electrons, etc. On the other hand, the transfer-printing of electrodes, which is formed on other substrates, onto the organic surface does not involve any such damages, leading to high-performance devices. Further, the transfer-printing process allows additional advantages of electrode surface tailoring or device fabrication on non-flat micro-rough surfaces. The proposed technique has led to much better performance of InGaZnO-based non-volatile memory transistors, compared to devices based on the direct evaporation of metal electrode. Transfer-printing of electrodes, instead of direct vacuum-based deposition, may lead to higher performing devices based on other organic electronic materials.",
author = "Donyoung Kim and Dahl-Young Khang",
year = "2014",
month = "5",
day = "13",
doi = "10.1016/j.polymer.2014.03.054",
language = "English",
volume = "55",
pages = "2491--2495",
journal = "Polymer",
issn = "0032-3861",
publisher = "Elsevier BV",
number = "10",

}

Transfer-printed thin film metal electrodes for high-performance ferroelectric P(VDF-TrFE) devices. / Kim, Donyoung; Khang, Dahl-Young.

In: Polymer, Vol. 55, No. 10, 13.05.2014, p. 2491-2495.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Transfer-printed thin film metal electrodes for high-performance ferroelectric P(VDF-TrFE) devices

AU - Kim, Donyoung

AU - Khang, Dahl-Young

PY - 2014/5/13

Y1 - 2014/5/13

N2 - Electrodes formation method has been found to be very important in electronic devices using ferroelectric P(VDF-TrFE) copolymer. Depending on the deposition system used, vacuum-based deposition methods such as e-beam or thermal evaporation of metal electrodes has resulted in the performance deterioration, due to damages on the fragile organic surface by highly energetic particles such as intensive short-wavelength radiation, secondary electrons, etc. On the other hand, the transfer-printing of electrodes, which is formed on other substrates, onto the organic surface does not involve any such damages, leading to high-performance devices. Further, the transfer-printing process allows additional advantages of electrode surface tailoring or device fabrication on non-flat micro-rough surfaces. The proposed technique has led to much better performance of InGaZnO-based non-volatile memory transistors, compared to devices based on the direct evaporation of metal electrode. Transfer-printing of electrodes, instead of direct vacuum-based deposition, may lead to higher performing devices based on other organic electronic materials.

AB - Electrodes formation method has been found to be very important in electronic devices using ferroelectric P(VDF-TrFE) copolymer. Depending on the deposition system used, vacuum-based deposition methods such as e-beam or thermal evaporation of metal electrodes has resulted in the performance deterioration, due to damages on the fragile organic surface by highly energetic particles such as intensive short-wavelength radiation, secondary electrons, etc. On the other hand, the transfer-printing of electrodes, which is formed on other substrates, onto the organic surface does not involve any such damages, leading to high-performance devices. Further, the transfer-printing process allows additional advantages of electrode surface tailoring or device fabrication on non-flat micro-rough surfaces. The proposed technique has led to much better performance of InGaZnO-based non-volatile memory transistors, compared to devices based on the direct evaporation of metal electrode. Transfer-printing of electrodes, instead of direct vacuum-based deposition, may lead to higher performing devices based on other organic electronic materials.

UR - http://www.scopus.com/inward/record.url?scp=84899935342&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84899935342&partnerID=8YFLogxK

U2 - 10.1016/j.polymer.2014.03.054

DO - 10.1016/j.polymer.2014.03.054

M3 - Article

VL - 55

SP - 2491

EP - 2495

JO - Polymer

JF - Polymer

SN - 0032-3861

IS - 10

ER -