Abstract
Electrodes formation method has been found to be very important in electronic devices using ferroelectric P(VDF-TrFE) copolymer. Depending on the deposition system used, vacuum-based deposition methods such as e-beam or thermal evaporation of metal electrodes has resulted in the performance deterioration, due to damages on the fragile organic surface by highly energetic particles such as intensive short-wavelength radiation, secondary electrons, etc. On the other hand, the transfer-printing of electrodes, which is formed on other substrates, onto the organic surface does not involve any such damages, leading to high-performance devices. Further, the transfer-printing process allows additional advantages of electrode surface tailoring or device fabrication on non-flat micro-rough surfaces. The proposed technique has led to much better performance of InGaZnO-based non-volatile memory transistors, compared to devices based on the direct evaporation of metal electrode. Transfer-printing of electrodes, instead of direct vacuum-based deposition, may lead to higher performing devices based on other organic electronic materials.
| Original language | English |
|---|---|
| Pages (from-to) | 2491-2495 |
| Number of pages | 5 |
| Journal | Polymer |
| Volume | 55 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2014 May 13 |
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All Science Journal Classification (ASJC) codes
- Organic Chemistry
- Polymers and Plastics
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Transfer-printed thin film metal electrodes for high-performance ferroelectric P(VDF-TrFE) devices. / Kim, Donyoung; Khang, Dahl-Young.
In: Polymer, Vol. 55, No. 10, 13.05.2014, p. 2491-2495.Research output: Contribution to journal › Article
TY - JOUR
T1 - Transfer-printed thin film metal electrodes for high-performance ferroelectric P(VDF-TrFE) devices
AU - Kim, Donyoung
AU - Khang, Dahl-Young
PY - 2014/5/13
Y1 - 2014/5/13
N2 - Electrodes formation method has been found to be very important in electronic devices using ferroelectric P(VDF-TrFE) copolymer. Depending on the deposition system used, vacuum-based deposition methods such as e-beam or thermal evaporation of metal electrodes has resulted in the performance deterioration, due to damages on the fragile organic surface by highly energetic particles such as intensive short-wavelength radiation, secondary electrons, etc. On the other hand, the transfer-printing of electrodes, which is formed on other substrates, onto the organic surface does not involve any such damages, leading to high-performance devices. Further, the transfer-printing process allows additional advantages of electrode surface tailoring or device fabrication on non-flat micro-rough surfaces. The proposed technique has led to much better performance of InGaZnO-based non-volatile memory transistors, compared to devices based on the direct evaporation of metal electrode. Transfer-printing of electrodes, instead of direct vacuum-based deposition, may lead to higher performing devices based on other organic electronic materials.
AB - Electrodes formation method has been found to be very important in electronic devices using ferroelectric P(VDF-TrFE) copolymer. Depending on the deposition system used, vacuum-based deposition methods such as e-beam or thermal evaporation of metal electrodes has resulted in the performance deterioration, due to damages on the fragile organic surface by highly energetic particles such as intensive short-wavelength radiation, secondary electrons, etc. On the other hand, the transfer-printing of electrodes, which is formed on other substrates, onto the organic surface does not involve any such damages, leading to high-performance devices. Further, the transfer-printing process allows additional advantages of electrode surface tailoring or device fabrication on non-flat micro-rough surfaces. The proposed technique has led to much better performance of InGaZnO-based non-volatile memory transistors, compared to devices based on the direct evaporation of metal electrode. Transfer-printing of electrodes, instead of direct vacuum-based deposition, may lead to higher performing devices based on other organic electronic materials.
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U2 - 10.1016/j.polymer.2014.03.054
DO - 10.1016/j.polymer.2014.03.054
M3 - Article
VL - 55
SP - 2491
EP - 2495
JO - Polymer
JF - Polymer
SN - 0032-3861
IS - 10
ER -