Transferable graphene oxide by stamping nanotechnology: Electron-transport layer for efficient bulk-heterojunction solar cells

Dong Hwan Wang, Jung Kyu Kim, Jung Hwa Seo, Insun Park, Byung Hee Hong, Jong Hyeok Park, Alan J. Heeger

Research output: Contribution to journalArticle

101 Citations (Scopus)

Abstract

Layer by layer: Electron-transport layers (ETLs) of transferable graphene oxide (GO) inserted by using a stamping nanotechnology (see picture) result in bulk-heterojunction (BHJ) solar cells with enhanced power conversion efficiency because of enhanced electron-charge transport and reduced electronic charge barrier with low series resistance. The GO ETL also increases the stability of the device in air.

Original languageEnglish
Pages (from-to)2874-2880
Number of pages7
JournalAngewandte Chemie - International Edition
Volume52
Issue number10
DOIs
Publication statusPublished - 2013 Mar 11

Fingerprint

Graphite
Stamping
Nanotechnology
Oxides
Graphene
Heterojunctions
Solar cells
Conversion efficiency
Charge transfer
Electrons
Air
Electron Transport

All Science Journal Classification (ASJC) codes

  • Catalysis
  • Chemistry(all)

Cite this

Wang, Dong Hwan ; Kim, Jung Kyu ; Seo, Jung Hwa ; Park, Insun ; Hong, Byung Hee ; Park, Jong Hyeok ; Heeger, Alan J. / Transferable graphene oxide by stamping nanotechnology : Electron-transport layer for efficient bulk-heterojunction solar cells. In: Angewandte Chemie - International Edition. 2013 ; Vol. 52, No. 10. pp. 2874-2880.
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Transferable graphene oxide by stamping nanotechnology : Electron-transport layer for efficient bulk-heterojunction solar cells. / Wang, Dong Hwan; Kim, Jung Kyu; Seo, Jung Hwa; Park, Insun; Hong, Byung Hee; Park, Jong Hyeok; Heeger, Alan J.

In: Angewandte Chemie - International Edition, Vol. 52, No. 10, 11.03.2013, p. 2874-2880.

Research output: Contribution to journalArticle

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AU - Park, Insun

AU - Hong, Byung Hee

AU - Park, Jong Hyeok

AU - Heeger, Alan J.

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