Transition Metal Dichalcogenide-Based Transistor Circuits for Gray Scale Organic Light-Emitting Displays

Sanghyuck Yu, Jin Sung Kim, Pyo Jin Jeon, Jongtae Ahn, Jae Chul Park, Seongil Im

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Two types of transition metal dichalcogenide (TMD) transistors are applied to demonstrate their possibility as switching/driving elements for the pixel of organic light-emitting diode (OLED) display. Such TMD materials are 6 nm thin WSe2 and MoS2 as a p-type and n-type channel, respectively, and the pixel is thus composed of external green OLED and nanoscale thin channel field effect transistors (FETs) for switching and driving. The maximum mobility of WSe2-FETs either as switch or as driver is ≈30 cm2 V−1 s−1, in linear regime of the gate voltage sweep range. Digital (ON/OFF-switching) and gray-scale analogue operations of OLED pixel are nicely demonstrated. MoS2 nanosheet FET-based pixel is also demonstrated, although limited to alternating gray scale operation of OLED. Device stability issue is still remaining for future study but TMD channel FETs are very promising and novel for their applications to OLED pixel because of their high mobility and ID ON/OFF ratio.

Original languageEnglish
Article number1603682
JournalAdvanced Functional Materials
Volume27
Issue number2
DOIs
Publication statusPublished - 2017 Jan 12

Fingerprint

transistor circuits
gray scale
Organic light emitting diodes (OLED)
Transition metals
Field effect transistors
Transistors
light emitting diodes
Pixels
transition metals
pixels
Display devices
field effect transistors
Networks (circuits)
switching circuits
Nanosheets
transistors
switches
Switches
analogs
Electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Condensed Matter Physics
  • Electrochemistry

Cite this

Yu, Sanghyuck ; Kim, Jin Sung ; Jeon, Pyo Jin ; Ahn, Jongtae ; Park, Jae Chul ; Im, Seongil. / Transition Metal Dichalcogenide-Based Transistor Circuits for Gray Scale Organic Light-Emitting Displays. In: Advanced Functional Materials. 2017 ; Vol. 27, No. 2.
@article{ec6492cc9d3d4c4995bbbe429700eab0,
title = "Transition Metal Dichalcogenide-Based Transistor Circuits for Gray Scale Organic Light-Emitting Displays",
abstract = "Two types of transition metal dichalcogenide (TMD) transistors are applied to demonstrate their possibility as switching/driving elements for the pixel of organic light-emitting diode (OLED) display. Such TMD materials are 6 nm thin WSe2 and MoS2 as a p-type and n-type channel, respectively, and the pixel is thus composed of external green OLED and nanoscale thin channel field effect transistors (FETs) for switching and driving. The maximum mobility of WSe2-FETs either as switch or as driver is ≈30 cm2 V−1 s−1, in linear regime of the gate voltage sweep range. Digital (ON/OFF-switching) and gray-scale analogue operations of OLED pixel are nicely demonstrated. MoS2 nanosheet FET-based pixel is also demonstrated, although limited to alternating gray scale operation of OLED. Device stability issue is still remaining for future study but TMD channel FETs are very promising and novel for their applications to OLED pixel because of their high mobility and ID ON/OFF ratio.",
author = "Sanghyuck Yu and Kim, {Jin Sung} and Jeon, {Pyo Jin} and Jongtae Ahn and Park, {Jae Chul} and Seongil Im",
year = "2017",
month = "1",
day = "12",
doi = "10.1002/adfm.201603682",
language = "English",
volume = "27",
journal = "Advanced Functional Materials",
issn = "1616-301X",
publisher = "Wiley-VCH Verlag",
number = "2",

}

Transition Metal Dichalcogenide-Based Transistor Circuits for Gray Scale Organic Light-Emitting Displays. / Yu, Sanghyuck; Kim, Jin Sung; Jeon, Pyo Jin; Ahn, Jongtae; Park, Jae Chul; Im, Seongil.

In: Advanced Functional Materials, Vol. 27, No. 2, 1603682, 12.01.2017.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Transition Metal Dichalcogenide-Based Transistor Circuits for Gray Scale Organic Light-Emitting Displays

AU - Yu, Sanghyuck

AU - Kim, Jin Sung

AU - Jeon, Pyo Jin

AU - Ahn, Jongtae

AU - Park, Jae Chul

AU - Im, Seongil

PY - 2017/1/12

Y1 - 2017/1/12

N2 - Two types of transition metal dichalcogenide (TMD) transistors are applied to demonstrate their possibility as switching/driving elements for the pixel of organic light-emitting diode (OLED) display. Such TMD materials are 6 nm thin WSe2 and MoS2 as a p-type and n-type channel, respectively, and the pixel is thus composed of external green OLED and nanoscale thin channel field effect transistors (FETs) for switching and driving. The maximum mobility of WSe2-FETs either as switch or as driver is ≈30 cm2 V−1 s−1, in linear regime of the gate voltage sweep range. Digital (ON/OFF-switching) and gray-scale analogue operations of OLED pixel are nicely demonstrated. MoS2 nanosheet FET-based pixel is also demonstrated, although limited to alternating gray scale operation of OLED. Device stability issue is still remaining for future study but TMD channel FETs are very promising and novel for their applications to OLED pixel because of their high mobility and ID ON/OFF ratio.

AB - Two types of transition metal dichalcogenide (TMD) transistors are applied to demonstrate their possibility as switching/driving elements for the pixel of organic light-emitting diode (OLED) display. Such TMD materials are 6 nm thin WSe2 and MoS2 as a p-type and n-type channel, respectively, and the pixel is thus composed of external green OLED and nanoscale thin channel field effect transistors (FETs) for switching and driving. The maximum mobility of WSe2-FETs either as switch or as driver is ≈30 cm2 V−1 s−1, in linear regime of the gate voltage sweep range. Digital (ON/OFF-switching) and gray-scale analogue operations of OLED pixel are nicely demonstrated. MoS2 nanosheet FET-based pixel is also demonstrated, although limited to alternating gray scale operation of OLED. Device stability issue is still remaining for future study but TMD channel FETs are very promising and novel for their applications to OLED pixel because of their high mobility and ID ON/OFF ratio.

UR - http://www.scopus.com/inward/record.url?scp=85003816140&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85003816140&partnerID=8YFLogxK

U2 - 10.1002/adfm.201603682

DO - 10.1002/adfm.201603682

M3 - Article

VL - 27

JO - Advanced Functional Materials

JF - Advanced Functional Materials

SN - 1616-301X

IS - 2

M1 - 1603682

ER -