Transition metal dichalcogenides (MoS2, MoSe2, WS2 and WSe2) exfoliation technique has strong influence upon their capacitance

Carmen C. Mayorga-Martinez; Adriano Ambrosi; Alex Yong Sheng Eng; Zdeněk Sofer; Martin Pumera

doi:10.1016/j.elecom.2015.03.017

Transition metal dichalcogenides (MoS₂, MoSe₂, WS₂ and WSe₂) exfoliation technique has strong influence upon their capacitance

Carmen C. Mayorga-Martinez, Adriano Ambrosi, Alex Yong Sheng Eng, Zdeněk Sofer, Martin Pumera

Department of Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

92 Citations (Scopus)

Abstract

Transition metal dichacogenides (TMD) represent an important class of layered compounds which are gaining lately an enormous interest in electrochemistry. Exfoliation of TMD materials to obtain single to few layer sheets is generally obtained through the intercalation of organolithium compounds. Here we investigated and compared the capacitive behavior of four representative TMD materials, i.e. MoS₂, MoSe₂, WS₂ and WSe₂ exfoliated with different organolithium intercalators, such as methyllithium (Me-Li), n-butyllithium (n-Bu-Li) and tert-butyllithium (t-Bu-Li). We found that both the metal/chalcogen composition and the type of intercalator strongly affect the capacitance of the exfoliated materials. These findings shall have profound implications on the construction of high-performance energy storage devices based on TMD.

Original language	English
Pages (from-to)	24-28
Number of pages	5
Journal	Electrochemistry Communications
Volume	56
DOIs	https://doi.org/10.1016/j.elecom.2015.03.017
Publication status	Published - 2015 Jul 1

Bibliographical note

Funding Information:
M.P. acknowledges Tier 2 grant ( MOE2013-T2-1-056 ; ARC 35/13) from the Ministry of Education, Singapore . Z.S. was supported by the Czech Science Foundation (GACR No. 15-09001S ) and by Specific university research (MSMT No. 20/20151 ).

Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.

All Science Journal Classification (ASJC) codes

Electrochemistry

Access to Document

10.1016/j.elecom.2015.03.017

Cite this

@article{f65186de128946808003e5dca0c2fbbb,

title = "Transition metal dichalcogenides (MoS2, MoSe2, WS2 and WSe2) exfoliation technique has strong influence upon their capacitance",

abstract = "Transition metal dichacogenides (TMD) represent an important class of layered compounds which are gaining lately an enormous interest in electrochemistry. Exfoliation of TMD materials to obtain single to few layer sheets is generally obtained through the intercalation of organolithium compounds. Here we investigated and compared the capacitive behavior of four representative TMD materials, i.e. MoS2, MoSe2, WS2 and WSe2 exfoliated with different organolithium intercalators, such as methyllithium (Me-Li), n-butyllithium (n-Bu-Li) and tert-butyllithium (t-Bu-Li). We found that both the metal/chalcogen composition and the type of intercalator strongly affect the capacitance of the exfoliated materials. These findings shall have profound implications on the construction of high-performance energy storage devices based on TMD.",

author = "Mayorga-Martinez, {Carmen C.} and Adriano Ambrosi and Eng, {Alex Yong Sheng} and Zden{\v e}k Sofer and Martin Pumera",

note = "Funding Information: M.P. acknowledges Tier 2 grant ( MOE2013-T2-1-056 ; ARC 35/13) from the Ministry of Education, Singapore . Z.S. was supported by the Czech Science Foundation (GACR No. 15-09001S ) and by Specific university research (MSMT No. 20/20151 ). Publisher Copyright: {\textcopyright} 2015 Elsevier B.V. All rights reserved.",

year = "2015",

month = jul,

day = "1",

doi = "10.1016/j.elecom.2015.03.017",

language = "English",

volume = "56",

pages = "24--28",

journal = "Electrochemistry Communications",

issn = "1388-2481",

publisher = "Elsevier Inc.",

}

TY - JOUR

T1 - Transition metal dichalcogenides (MoS2, MoSe2, WS2 and WSe2) exfoliation technique has strong influence upon their capacitance

AU - Mayorga-Martinez, Carmen C.

AU - Ambrosi, Adriano

AU - Eng, Alex Yong Sheng

AU - Sofer, Zdeněk

AU - Pumera, Martin

N1 - Funding Information: M.P. acknowledges Tier 2 grant ( MOE2013-T2-1-056 ; ARC 35/13) from the Ministry of Education, Singapore . Z.S. was supported by the Czech Science Foundation (GACR No. 15-09001S ) and by Specific university research (MSMT No. 20/20151 ). Publisher Copyright: © 2015 Elsevier B.V. All rights reserved.

PY - 2015/7/1

Y1 - 2015/7/1

N2 - Transition metal dichacogenides (TMD) represent an important class of layered compounds which are gaining lately an enormous interest in electrochemistry. Exfoliation of TMD materials to obtain single to few layer sheets is generally obtained through the intercalation of organolithium compounds. Here we investigated and compared the capacitive behavior of four representative TMD materials, i.e. MoS2, MoSe2, WS2 and WSe2 exfoliated with different organolithium intercalators, such as methyllithium (Me-Li), n-butyllithium (n-Bu-Li) and tert-butyllithium (t-Bu-Li). We found that both the metal/chalcogen composition and the type of intercalator strongly affect the capacitance of the exfoliated materials. These findings shall have profound implications on the construction of high-performance energy storage devices based on TMD.

AB - Transition metal dichacogenides (TMD) represent an important class of layered compounds which are gaining lately an enormous interest in electrochemistry. Exfoliation of TMD materials to obtain single to few layer sheets is generally obtained through the intercalation of organolithium compounds. Here we investigated and compared the capacitive behavior of four representative TMD materials, i.e. MoS2, MoSe2, WS2 and WSe2 exfoliated with different organolithium intercalators, such as methyllithium (Me-Li), n-butyllithium (n-Bu-Li) and tert-butyllithium (t-Bu-Li). We found that both the metal/chalcogen composition and the type of intercalator strongly affect the capacitance of the exfoliated materials. These findings shall have profound implications on the construction of high-performance energy storage devices based on TMD.

UR - http://www.scopus.com/inward/record.url?scp=84928538497&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84928538497&partnerID=8YFLogxK

U2 - 10.1016/j.elecom.2015.03.017

DO - 10.1016/j.elecom.2015.03.017

M3 - Article

AN - SCOPUS:84928538497

VL - 56

SP - 24

EP - 28

JO - Electrochemistry Communications

JF - Electrochemistry Communications

SN - 1388-2481

ER -