Transparent AMOLED display driven by hafnium-indium-zinc oxide thin film transistor array

Tae Sang Kim, Joon Seok Park, Kyoung Seok Son, Ji Sim Jung, Kwang Hee Lee, Wan Joo Maeng, Hyun Suk Kim, Jang Yeon Kwon, Bonwon Koo, Sangyun Lee

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Abstract

The fabrication and electrical characteristics of transparent hafnium-indium-zinc oxide (HIZO) thin film transistors (TFTs) are presented in detail. The devices incorporate an etch stopper structure, which may consist of either a single SiOx layer deposited by plasma enhanced chemical vapor deposition (PECVD) at 150 °C, or a dual stack of SiOx layers grown at 150 °C and 350 °C. The electrical properties suggest that the latter is more effective at protecting the underlying oxide semiconductor in the course of source-drain etching, hence resulting in high performance transparent TFTs. The saturation mobility and the subthreshold swing of the transparent HIZO TFTs fabricated with the dual etch stopper are 7.6 cm2/Vs and 0.30 V/decade, respectively. A 4-inch QVGA (320 × 240) transparent active matrix organic light emitting diode (AMOLED) display was realized using a backplane array of the above TFTs.

Original languageEnglish
Pages (from-to)1253-1256
Number of pages4
JournalCurrent Applied Physics
Volume11
Issue number5
DOIs
Publication statusPublished - 2011 Sep 1

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Kim, T. S., Park, J. S., Son, K. S., Jung, J. S., Lee, K. H., Maeng, W. J., Kim, H. S., Kwon, J. Y., Koo, B., & Lee, S. (2011). Transparent AMOLED display driven by hafnium-indium-zinc oxide thin film transistor array. Current Applied Physics, 11(5), 1253-1256. https://doi.org/10.1016/j.cap.2011.03.031