Photo and electrically stable transparent ZnO Thin Film Transistors (TFT) for an Active Matrix- Organic Light Emitting Diode (AM-OLED) panel was fabricated. The fabrication of a bottom emission AM-OLED back panel with a transparent ZnO-TFT array, 150 NM thick Indium-Tin-Oxide (ITO) glass was used for the substrate. A 20 nm thick ZnO semiconductor film was deposited by means of plasma assisted atomic layer deposition (PEALD), after source/drain patterning of ITO by wet etching. Trimethylaluminium (TMA) was used as an Al precursor in all the ALD experiments. The electrically table ZnO-TTFT showed quite good photo-stability and full transparent ZnO-TFT array demonstrates a successful operation of a 2.5 inch sized bottom emission AM-blue OLED panel. ZnO-TTFT with a water-vapor precursor processed Al2O3 dielectric is very effective as a driver for an efficient AM-OLED display.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering