Transparent conductive ZnO:Al films grown by atomic layer deposition for Si-wire-based solar cells

Byeong Yun Oh, Jeong Hwan Kim, Jin Woo Han, Dae-Shik Seo, Hwan Soo Jang, Ho Jin Choi, Seong Ho Baek, Jae Hyun Kim, Gi Seok Heo, Tae Won Kim, Kwang Young Kim

Research output: Contribution to journalArticle

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Abstract

Structural, electrical, and optical properties of atomic layer-controlled Al-doped ZnO (ZnO:Al) films grown by atomic layer deposition (ALD) on glass substrates were characterized at various growth temperatures for use as transparent electrodes. The Al atomic content in ZnO:Al films increased due to the reduced ZnO film growth rate with increasing temperature. The preferred orientation of ZnO:Al films was changed, and the optimum condition for best crystallinity was identified by varying the growth temperature. Furthermore, the carrier concentration of free electron was increased by substituting the Zn sites with Al atoms in the crystal, resulting from monolayer growth based on alternate self-limiting surface chemical reactions. The electrical resistivity of ZnO:Al film grown by ALD at 225 °C reached the lowest value of 8.45 × 10-4 Ω cm, with a carrier mobility of 9.00 cm 2 V-1 s-1 and optical transmittance of ∼93%. This result demonstrates that ZnO:Al films grown by ALD possess excellent potential for applications in electronic devices and displays as transparent electrodes and surface passivation layers.

Original languageEnglish
Pages (from-to)273-279
Number of pages7
JournalCurrent Applied Physics
Volume12
Issue number1
DOIs
Publication statusPublished - 2012 Jan 1

Fingerprint

Atomic layer deposition
atomic layer epitaxy
Solar cells
solar cells
wire
Wire
Growth temperature
Electrodes
Carrier mobility
Opacity
Film growth
electrodes
Passivation
Carrier concentration
Structural properties
Chemical reactions
Monolayers
carrier mobility
Electric properties
Optical properties

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Oh, Byeong Yun ; Kim, Jeong Hwan ; Han, Jin Woo ; Seo, Dae-Shik ; Jang, Hwan Soo ; Choi, Ho Jin ; Baek, Seong Ho ; Kim, Jae Hyun ; Heo, Gi Seok ; Kim, Tae Won ; Kim, Kwang Young. / Transparent conductive ZnO:Al films grown by atomic layer deposition for Si-wire-based solar cells. In: Current Applied Physics. 2012 ; Vol. 12, No. 1. pp. 273-279.
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abstract = "Structural, electrical, and optical properties of atomic layer-controlled Al-doped ZnO (ZnO:Al) films grown by atomic layer deposition (ALD) on glass substrates were characterized at various growth temperatures for use as transparent electrodes. The Al atomic content in ZnO:Al films increased due to the reduced ZnO film growth rate with increasing temperature. The preferred orientation of ZnO:Al films was changed, and the optimum condition for best crystallinity was identified by varying the growth temperature. Furthermore, the carrier concentration of free electron was increased by substituting the Zn sites with Al atoms in the crystal, resulting from monolayer growth based on alternate self-limiting surface chemical reactions. The electrical resistivity of ZnO:Al film grown by ALD at 225 °C reached the lowest value of 8.45 × 10-4 Ω cm, with a carrier mobility of 9.00 cm 2 V-1 s-1 and optical transmittance of ∼93{\%}. This result demonstrates that ZnO:Al films grown by ALD possess excellent potential for applications in electronic devices and displays as transparent electrodes and surface passivation layers.",
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Oh, BY, Kim, JH, Han, JW, Seo, D-S, Jang, HS, Choi, HJ, Baek, SH, Kim, JH, Heo, GS, Kim, TW & Kim, KY 2012, 'Transparent conductive ZnO:Al films grown by atomic layer deposition for Si-wire-based solar cells', Current Applied Physics, vol. 12, no. 1, pp. 273-279. https://doi.org/10.1016/j.cap.2011.06.017

Transparent conductive ZnO:Al films grown by atomic layer deposition for Si-wire-based solar cells. / Oh, Byeong Yun; Kim, Jeong Hwan; Han, Jin Woo; Seo, Dae-Shik; Jang, Hwan Soo; Choi, Ho Jin; Baek, Seong Ho; Kim, Jae Hyun; Heo, Gi Seok; Kim, Tae Won; Kim, Kwang Young.

In: Current Applied Physics, Vol. 12, No. 1, 01.01.2012, p. 273-279.

Research output: Contribution to journalArticle

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AU - Kim, Jeong Hwan

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AU - Seo, Dae-Shik

AU - Jang, Hwan Soo

AU - Choi, Ho Jin

AU - Baek, Seong Ho

AU - Kim, Jae Hyun

AU - Heo, Gi Seok

AU - Kim, Tae Won

AU - Kim, Kwang Young

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N2 - Structural, electrical, and optical properties of atomic layer-controlled Al-doped ZnO (ZnO:Al) films grown by atomic layer deposition (ALD) on glass substrates were characterized at various growth temperatures for use as transparent electrodes. The Al atomic content in ZnO:Al films increased due to the reduced ZnO film growth rate with increasing temperature. The preferred orientation of ZnO:Al films was changed, and the optimum condition for best crystallinity was identified by varying the growth temperature. Furthermore, the carrier concentration of free electron was increased by substituting the Zn sites with Al atoms in the crystal, resulting from monolayer growth based on alternate self-limiting surface chemical reactions. The electrical resistivity of ZnO:Al film grown by ALD at 225 °C reached the lowest value of 8.45 × 10-4 Ω cm, with a carrier mobility of 9.00 cm 2 V-1 s-1 and optical transmittance of ∼93%. This result demonstrates that ZnO:Al films grown by ALD possess excellent potential for applications in electronic devices and displays as transparent electrodes and surface passivation layers.

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