We report on the fabrication of transparent top-gate ZnO nonvolatile memory thin-film transistors (NVM-TFTs) with 200 nm thick poly(vinylidene fluoride/trifluoroethylene) ferroelectric layer; semitransparent 10 nm thin AgOx and transparent 130 nm thick indium-zinc oxide (IZO) were deposited on the ferroelectric polymer as gate electrode by rf sputtering. Our semitransparent NVM-TFT with AgOx gate operates under low voltage write-erase (WR-ER) pulse of ±20 V, but shows some degradation in retention property. In contrast, our transparent IZO-gated device displays very good retention properties but requires anomalously higher pulse of ±70 V for WR and ER states. Both devices stably operated under visible illuminations.
Bibliographical noteFunding Information:
Authors acknowledge the financial support from KOSEF (NRL program: Grant No. 2009-8-0403), from MKE (the fundamental R&D Program for Core Technology of Materials: Grant No. 2008-8-1410 and the IT R&D Program for Smart window with transparent electronic devices: Grant No. 2008-8-0613), and Brain Korea 21 Program. C.H.P. thanks for the Seoul Science Fellowship and Seoam Fellowship.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)