Transparent photostable ZnO nonvolatile memory transistor with ferroelectric polymer and sputter-deposited oxide gate

C. H. Park, Seongil Im, Jungheum Yun, Gun Hwan Lee, Byoung H. Lee, Myung M. Sung

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

We report on the fabrication of transparent top-gate ZnO nonvolatile memory thin-film transistors (NVM-TFTs) with 200 nm thick poly(vinylidene fluoride/trifluoroethylene) ferroelectric layer; semitransparent 10 nm thin AgOx and transparent 130 nm thick indium-zinc oxide (IZO) were deposited on the ferroelectric polymer as gate electrode by rf sputtering. Our semitransparent NVM-TFT with AgOx gate operates under low voltage write-erase (WR-ER) pulse of ±20 V, but shows some degradation in retention property. In contrast, our transparent IZO-gated device displays very good retention properties but requires anomalously higher pulse of ±70 V for WR and ER states. Both devices stably operated under visible illuminations.

Original languageEnglish
Article number223506
JournalApplied Physics Letters
Volume95
Issue number22
DOIs
Publication statusPublished - 2009 Dec 18

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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