We report on the fabrication of pentacene-based transparent thin-film transistors (TTFT) that consist of Ni Ox, Al Ox, and indium-tin-oxide (ITO) for the source-drain (S/D) electrode, gate dielectric, and gate electrode, respectively. The Ni Ox S/D electrodes of which the work function is well matched to that of pentacene were deposited on a 50-nm -thick pentacene channel by thermal evaporation of NiO powder and showed a moderately low but still effective transmittance of ∼25% in the visible range along with a good sheet resistance of ∼60 Ω/□. The maximum saturation current of our pentacene-based TTFT was about 15 μA at a gate bias of -40 V showing a high field effect mobility of 0.9 cm2 Vs in the dark, and the on/off current ratio of our TTFT was about 5× 105. It is concluded that jointly adopting Ni Ox for the S/D electrode and Al Ox for gate dielectric realizes a high-quality pentacene-based TTFT.
Bibliographical noteFunding Information:
The authors are very appreciative of the financial support from KISTEP Program No. M1-0214-00-0228, and YTCC (Yonsei Techno Cooperation Center, Project Year 2004). They also acknowledge the support from Brain Korea 21 Program. J.H.K. acknowledges financial support from eSSC at POSTECH funded by KOSEF.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)