Transparent thin-film transistors with pentacene channel, AlOx gate, and NiOx electrodes

Jeong M. Choi, D. K. Hwang, Jae Hoon Kim, Seongil Im

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40 Citations (Scopus)


We report on the fabrication of pentacene-based transparent thin-film transistors (TTFT) that consist of Ni Ox, Al Ox, and indium-tin-oxide (ITO) for the source-drain (S/D) electrode, gate dielectric, and gate electrode, respectively. The Ni Ox S/D electrodes of which the work function is well matched to that of pentacene were deposited on a 50-nm -thick pentacene channel by thermal evaporation of NiO powder and showed a moderately low but still effective transmittance of ∼25% in the visible range along with a good sheet resistance of ∼60 Ω/□. The maximum saturation current of our pentacene-based TTFT was about 15 μA at a gate bias of -40 V showing a high field effect mobility of 0.9 cm2 Vs in the dark, and the on/off current ratio of our TTFT was about 5× 105. It is concluded that jointly adopting Ni Ox for the S/D electrode and Al Ox for gate dielectric realizes a high-quality pentacene-based TTFT.

Original languageEnglish
Article number123505
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number12
Publication statusPublished - 2005 Mar 21

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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