We have fabricated 2.5" QCIF+ bottom emission AM-OLED with aperture ratio of 59.6% using fully transparent ZnO-TFT array and highly conductive oxide/metal/oxide electrode for the first time. The bias stability of ZnO TFT was improved by optimizing ZnO deposition and first gate insulator process. Plasma free process for the gate insulator makes ZnO TFT very stable under electrical bias stress. The Vth shift was less than 0.3 V after V DS=25 V and VGS=15 V application for 60 hours. Transparent ZnO TFT characteristics did not change noticeably under irradiation of visible light.
|Number of pages||4|
|Journal||Digest of Technical Papers - SID International Symposium|
|Publication status||Published - 2008 Oct 30|
|Event||2008 SID International Symposium - Los Angeles, CA, United States|
Duration: 2008 May 20 → 2008 May 21
All Science Journal Classification (ASJC) codes