Transparent ZnO thin film transistor for the application of high aperture ratio bottom emission AM-OLED display

Sang Hee Ko Park, Minki Ryu, Chi Sun Hwang, Shinhyuk Yang, Chunwon Byun, Jeong Ik Lee, Jaeheon Shin, Sung Min Yoon, Hye Yong Chu, Kyoung Ik Cho, Kimoon Lee, Min Suk Oh, Seongil Im

Research output: Contribution to journalConference article

24 Citations (Scopus)

Abstract

We have fabricated 2.5" QCIF+ bottom emission AM-OLED with aperture ratio of 59.6% using fully transparent ZnO-TFT array and highly conductive oxide/metal/oxide electrode for the first time. The bias stability of ZnO TFT was improved by optimizing ZnO deposition and first gate insulator process. Plasma free process for the gate insulator makes ZnO TFT very stable under electrical bias stress. The Vth shift was less than 0.3 V after V DS=25 V and VGS=15 V application for 60 hours. Transparent ZnO TFT characteristics did not change noticeably under irradiation of visible light.

Original languageEnglish
Pages (from-to)629-632
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume39
Issue number2
Publication statusPublished - 2008 Oct 30
Event2008 SID International Symposium - Los Angeles, CA, United States
Duration: 2008 May 202008 May 21

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Ko Park, S. H., Ryu, M., Hwang, C. S., Yang, S., Byun, C., Lee, J. I., Shin, J., Yoon, S. M., Chu, H. Y., Cho, K. I., Lee, K., Oh, M. S., & Im, S. (2008). Transparent ZnO thin film transistor for the application of high aperture ratio bottom emission AM-OLED display. Digest of Technical Papers - SID International Symposium, 39(2), 629-632.