TY - JOUR
T1 - Trap-controlled space-charge-limited conduction in amorphous As x Te1-x thin films with ovonic threshold switching
AU - Kim, Taeho
AU - Lee, Dayoon
AU - Kim, Jaeyeon
AU - Sohn, Hyunchul
N1 - Publisher Copyright:
© 2020 The Japan Society of Applied Physics.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2020/4/1
Y1 - 2020/4/1
N2 - Ovonic threshold switching (OTS) in chalcogenide materials has attracted considerable interest for application in electronic devices to suppress leakage current in cross-point array structures. Although OTS appears to originate from an electronic process, the exact mechanism of OTS remains unclear with respect to sub-threshold conduction and threshold switching. In this study, we demonstrated that the sub-threshold conduction characteristics is affected by the structures of the exponentially distributed trap states in amorphous chalcogenide materials. Using binary As x Te1-x thin films, we investigated the effects of trap distribution on OTS characteristics, analyzed the band structures, and developed a trap-controlled space-charge-limited conduction model.
AB - Ovonic threshold switching (OTS) in chalcogenide materials has attracted considerable interest for application in electronic devices to suppress leakage current in cross-point array structures. Although OTS appears to originate from an electronic process, the exact mechanism of OTS remains unclear with respect to sub-threshold conduction and threshold switching. In this study, we demonstrated that the sub-threshold conduction characteristics is affected by the structures of the exponentially distributed trap states in amorphous chalcogenide materials. Using binary As x Te1-x thin films, we investigated the effects of trap distribution on OTS characteristics, analyzed the band structures, and developed a trap-controlled space-charge-limited conduction model.
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U2 - 10.35848/1882-0786/ab827c
DO - 10.35848/1882-0786/ab827c
M3 - Article
AN - SCOPUS:85084920550
VL - 13
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 4
M1 - 045003
ER -