Trap-controlled space-charge-limited conduction in amorphous As x Te1-x thin films with ovonic threshold switching

Taeho Kim, Dayoon Lee, Jaeyeon Kim, Hyunchul Sohn

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Ovonic threshold switching (OTS) in chalcogenide materials has attracted considerable interest for application in electronic devices to suppress leakage current in cross-point array structures. Although OTS appears to originate from an electronic process, the exact mechanism of OTS remains unclear with respect to sub-threshold conduction and threshold switching. In this study, we demonstrated that the sub-threshold conduction characteristics is affected by the structures of the exponentially distributed trap states in amorphous chalcogenide materials. Using binary As x Te1-x thin films, we investigated the effects of trap distribution on OTS characteristics, analyzed the band structures, and developed a trap-controlled space-charge-limited conduction model.

Original languageEnglish
Article number045003
JournalApplied Physics Express
Issue number4
Publication statusPublished - 2020 Apr 1

Bibliographical note

Publisher Copyright:
© 2020 The Japan Society of Applied Physics.

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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