Trap density of states measured by photon probe on amorphous-InGaZnO thin-film transistors

Youn Gyoung Chang, Dae Hwan Kim, Gunwoo Ko, Kimoon Lee, Jae Hoon Kim, Seongil Im

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Trap density of states (DOS) for two amorphous-InGaZnO thin-film transistors are measured by photoexcited charge-collection spectroscopy (PECCS); free charges trapped at a certain energy level are liberated by the corresponding energetic photons and then electrically collected at the source/drain electrodes. During this photoelectric process, the threshold voltage of TFT shifts and its magnitude provides the DOS information of charge traps. According to the PECCS analysis, the TFT with a channel deposited under high sputtering power appeared more stable than the other device prepared with low sputtering power, showing even less than ∼10-10cm -2 as its totally integrated trap density.

Original languageEnglish
Article number5708165
Pages (from-to)336-338
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number3
DOIs
Publication statusPublished - 2011 Mar 1

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Amorphous films
Thin film transistors
Sputtering
Photons
Spectroscopy
Threshold voltage
Electron energy levels
Electrodes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Chang, Youn Gyoung ; Kim, Dae Hwan ; Ko, Gunwoo ; Lee, Kimoon ; Kim, Jae Hoon ; Im, Seongil. / Trap density of states measured by photon probe on amorphous-InGaZnO thin-film transistors. In: IEEE Electron Device Letters. 2011 ; Vol. 32, No. 3. pp. 336-338.
@article{713b4c5be1984c68850fca9a8b92e985,
title = "Trap density of states measured by photon probe on amorphous-InGaZnO thin-film transistors",
abstract = "Trap density of states (DOS) for two amorphous-InGaZnO thin-film transistors are measured by photoexcited charge-collection spectroscopy (PECCS); free charges trapped at a certain energy level are liberated by the corresponding energetic photons and then electrically collected at the source/drain electrodes. During this photoelectric process, the threshold voltage of TFT shifts and its magnitude provides the DOS information of charge traps. According to the PECCS analysis, the TFT with a channel deposited under high sputtering power appeared more stable than the other device prepared with low sputtering power, showing even less than ∼10-10cm -2 as its totally integrated trap density.",
author = "Chang, {Youn Gyoung} and Kim, {Dae Hwan} and Gunwoo Ko and Kimoon Lee and Kim, {Jae Hoon} and Seongil Im",
year = "2011",
month = "3",
day = "1",
doi = "10.1109/LED.2010.2102739",
language = "English",
volume = "32",
pages = "336--338",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3",

}

Trap density of states measured by photon probe on amorphous-InGaZnO thin-film transistors. / Chang, Youn Gyoung; Kim, Dae Hwan; Ko, Gunwoo; Lee, Kimoon; Kim, Jae Hoon; Im, Seongil.

In: IEEE Electron Device Letters, Vol. 32, No. 3, 5708165, 01.03.2011, p. 336-338.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Trap density of states measured by photon probe on amorphous-InGaZnO thin-film transistors

AU - Chang, Youn Gyoung

AU - Kim, Dae Hwan

AU - Ko, Gunwoo

AU - Lee, Kimoon

AU - Kim, Jae Hoon

AU - Im, Seongil

PY - 2011/3/1

Y1 - 2011/3/1

N2 - Trap density of states (DOS) for two amorphous-InGaZnO thin-film transistors are measured by photoexcited charge-collection spectroscopy (PECCS); free charges trapped at a certain energy level are liberated by the corresponding energetic photons and then electrically collected at the source/drain electrodes. During this photoelectric process, the threshold voltage of TFT shifts and its magnitude provides the DOS information of charge traps. According to the PECCS analysis, the TFT with a channel deposited under high sputtering power appeared more stable than the other device prepared with low sputtering power, showing even less than ∼10-10cm -2 as its totally integrated trap density.

AB - Trap density of states (DOS) for two amorphous-InGaZnO thin-film transistors are measured by photoexcited charge-collection spectroscopy (PECCS); free charges trapped at a certain energy level are liberated by the corresponding energetic photons and then electrically collected at the source/drain electrodes. During this photoelectric process, the threshold voltage of TFT shifts and its magnitude provides the DOS information of charge traps. According to the PECCS analysis, the TFT with a channel deposited under high sputtering power appeared more stable than the other device prepared with low sputtering power, showing even less than ∼10-10cm -2 as its totally integrated trap density.

UR - http://www.scopus.com/inward/record.url?scp=79951952819&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79951952819&partnerID=8YFLogxK

U2 - 10.1109/LED.2010.2102739

DO - 10.1109/LED.2010.2102739

M3 - Article

VL - 32

SP - 336

EP - 338

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 3

M1 - 5708165

ER -