Trap density probing on top-gate MoS2 nanosheet field-effect transistors by photo-excited charge collection spectroscopy

Kyunghee Choi, Syed Raza Ali Raza, Hee Sung Lee, Pyo Jin Jeon, Atiye Pezeshki, Sung Wook Min, Jin Sung Kim, Woojin Yoon, Sang Yong Ju, Kimoon Lee, Seongil Im

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

Two-dimensional (2D) molybdenum disulfide (MoS2) field-effect transistors (FETs) have been extensively studied, but most of the FETs with gate insulators have displayed negative threshold voltage values, which indicates the presence of interfacial traps both shallow and deep in energy level. Despite such interface trap issues, reports on trap densities in MoS2 are quite limited. Here, we probed top-gate MoS2 FETs with two- (2L), three- (3L), and four-layer (4L) MoS2/dielectric interfaces to quantify deep-level interface trap densities by photo-excited charge collection spectroscopy (PECCS), and reported the result that deep-level trap densities over 1012 cm-2 may exist in the interface and bulk MoS2 near the interface. Transfer curve hysteresis and PECCS measurements show that shallow traps and deep traps are not that different in density order from each other. We conclude that our PECCS analysis distinguishably provides valuable information on deep level interface/bulk trap densities in 2D-based FETs. This journal is

Original languageEnglish
Pages (from-to)5617-5623
Number of pages7
JournalNanoscale
Volume7
Issue number13
DOIs
Publication statusPublished - 2015 Apr 7

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Nanosheets
Field effect transistors
Spectroscopy
Gates (transistor)
Threshold voltage
Electron energy levels
Molybdenum
Hysteresis

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Choi, Kyunghee ; Raza, Syed Raza Ali ; Lee, Hee Sung ; Jeon, Pyo Jin ; Pezeshki, Atiye ; Min, Sung Wook ; Kim, Jin Sung ; Yoon, Woojin ; Ju, Sang Yong ; Lee, Kimoon ; Im, Seongil. / Trap density probing on top-gate MoS2 nanosheet field-effect transistors by photo-excited charge collection spectroscopy. In: Nanoscale. 2015 ; Vol. 7, No. 13. pp. 5617-5623.
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abstract = "Two-dimensional (2D) molybdenum disulfide (MoS2) field-effect transistors (FETs) have been extensively studied, but most of the FETs with gate insulators have displayed negative threshold voltage values, which indicates the presence of interfacial traps both shallow and deep in energy level. Despite such interface trap issues, reports on trap densities in MoS2 are quite limited. Here, we probed top-gate MoS2 FETs with two- (2L), three- (3L), and four-layer (4L) MoS2/dielectric interfaces to quantify deep-level interface trap densities by photo-excited charge collection spectroscopy (PECCS), and reported the result that deep-level trap densities over 1012 cm-2 may exist in the interface and bulk MoS2 near the interface. Transfer curve hysteresis and PECCS measurements show that shallow traps and deep traps are not that different in density order from each other. We conclude that our PECCS analysis distinguishably provides valuable information on deep level interface/bulk trap densities in 2D-based FETs. This journal is",
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Choi, K, Raza, SRA, Lee, HS, Jeon, PJ, Pezeshki, A, Min, SW, Kim, JS, Yoon, W, Ju, SY, Lee, K & Im, S 2015, 'Trap density probing on top-gate MoS2 nanosheet field-effect transistors by photo-excited charge collection spectroscopy', Nanoscale, vol. 7, no. 13, pp. 5617-5623. https://doi.org/10.1039/c4nr06707j

Trap density probing on top-gate MoS2 nanosheet field-effect transistors by photo-excited charge collection spectroscopy. / Choi, Kyunghee; Raza, Syed Raza Ali; Lee, Hee Sung; Jeon, Pyo Jin; Pezeshki, Atiye; Min, Sung Wook; Kim, Jin Sung; Yoon, Woojin; Ju, Sang Yong; Lee, Kimoon; Im, Seongil.

In: Nanoscale, Vol. 7, No. 13, 07.04.2015, p. 5617-5623.

Research output: Contribution to journalArticle

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T1 - Trap density probing on top-gate MoS2 nanosheet field-effect transistors by photo-excited charge collection spectroscopy

AU - Choi, Kyunghee

AU - Raza, Syed Raza Ali

AU - Lee, Hee Sung

AU - Jeon, Pyo Jin

AU - Pezeshki, Atiye

AU - Min, Sung Wook

AU - Kim, Jin Sung

AU - Yoon, Woojin

AU - Ju, Sang Yong

AU - Lee, Kimoon

AU - Im, Seongil

PY - 2015/4/7

Y1 - 2015/4/7

N2 - Two-dimensional (2D) molybdenum disulfide (MoS2) field-effect transistors (FETs) have been extensively studied, but most of the FETs with gate insulators have displayed negative threshold voltage values, which indicates the presence of interfacial traps both shallow and deep in energy level. Despite such interface trap issues, reports on trap densities in MoS2 are quite limited. Here, we probed top-gate MoS2 FETs with two- (2L), three- (3L), and four-layer (4L) MoS2/dielectric interfaces to quantify deep-level interface trap densities by photo-excited charge collection spectroscopy (PECCS), and reported the result that deep-level trap densities over 1012 cm-2 may exist in the interface and bulk MoS2 near the interface. Transfer curve hysteresis and PECCS measurements show that shallow traps and deep traps are not that different in density order from each other. We conclude that our PECCS analysis distinguishably provides valuable information on deep level interface/bulk trap densities in 2D-based FETs. This journal is

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