Abstract
Two-dimensional (2D) molybdenum disulfide (MoS2) field-effect transistors (FETs) have been extensively studied, but most of the FETs with gate insulators have displayed negative threshold voltage values, which indicates the presence of interfacial traps both shallow and deep in energy level. Despite such interface trap issues, reports on trap densities in MoS2 are quite limited. Here, we probed top-gate MoS2 FETs with two- (2L), three- (3L), and four-layer (4L) MoS2/dielectric interfaces to quantify deep-level interface trap densities by photo-excited charge collection spectroscopy (PECCS), and reported the result that deep-level trap densities over 1012 cm-2 may exist in the interface and bulk MoS2 near the interface. Transfer curve hysteresis and PECCS measurements show that shallow traps and deep traps are not that different in density order from each other. We conclude that our PECCS analysis distinguishably provides valuable information on deep level interface/bulk trap densities in 2D-based FETs. This journal is
| Original language | English |
|---|---|
| Pages (from-to) | 5617-5623 |
| Number of pages | 7 |
| Journal | Nanoscale |
| Volume | 7 |
| Issue number | 13 |
| DOIs | |
| Publication status | Published - 2015 Apr 7 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
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Trap density probing on top-gate MoS2 nanosheet field-effect transistors by photo-excited charge collection spectroscopy. / Choi, Kyunghee; Raza, Syed Raza Ali; Lee, Hee Sung; Jeon, Pyo Jin; Pezeshki, Atiye; Min, Sung Wook; Kim, Jin Sung; Yoon, Woojin; Ju, Sang Yong; Lee, Kimoon; Im, Seongil.
In: Nanoscale, Vol. 7, No. 13, 07.04.2015, p. 5617-5623.Research output: Contribution to journal › Article
TY - JOUR
T1 - Trap density probing on top-gate MoS2 nanosheet field-effect transistors by photo-excited charge collection spectroscopy
AU - Choi, Kyunghee
AU - Raza, Syed Raza Ali
AU - Lee, Hee Sung
AU - Jeon, Pyo Jin
AU - Pezeshki, Atiye
AU - Min, Sung Wook
AU - Kim, Jin Sung
AU - Yoon, Woojin
AU - Ju, Sang Yong
AU - Lee, Kimoon
AU - Im, Seongil
PY - 2015/4/7
Y1 - 2015/4/7
N2 - Two-dimensional (2D) molybdenum disulfide (MoS2) field-effect transistors (FETs) have been extensively studied, but most of the FETs with gate insulators have displayed negative threshold voltage values, which indicates the presence of interfacial traps both shallow and deep in energy level. Despite such interface trap issues, reports on trap densities in MoS2 are quite limited. Here, we probed top-gate MoS2 FETs with two- (2L), three- (3L), and four-layer (4L) MoS2/dielectric interfaces to quantify deep-level interface trap densities by photo-excited charge collection spectroscopy (PECCS), and reported the result that deep-level trap densities over 1012 cm-2 may exist in the interface and bulk MoS2 near the interface. Transfer curve hysteresis and PECCS measurements show that shallow traps and deep traps are not that different in density order from each other. We conclude that our PECCS analysis distinguishably provides valuable information on deep level interface/bulk trap densities in 2D-based FETs. This journal is
AB - Two-dimensional (2D) molybdenum disulfide (MoS2) field-effect transistors (FETs) have been extensively studied, but most of the FETs with gate insulators have displayed negative threshold voltage values, which indicates the presence of interfacial traps both shallow and deep in energy level. Despite such interface trap issues, reports on trap densities in MoS2 are quite limited. Here, we probed top-gate MoS2 FETs with two- (2L), three- (3L), and four-layer (4L) MoS2/dielectric interfaces to quantify deep-level interface trap densities by photo-excited charge collection spectroscopy (PECCS), and reported the result that deep-level trap densities over 1012 cm-2 may exist in the interface and bulk MoS2 near the interface. Transfer curve hysteresis and PECCS measurements show that shallow traps and deep traps are not that different in density order from each other. We conclude that our PECCS analysis distinguishably provides valuable information on deep level interface/bulk trap densities in 2D-based FETs. This journal is
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U2 - 10.1039/c4nr06707j
DO - 10.1039/c4nr06707j
M3 - Article
AN - SCOPUS:84925326052
VL - 7
SP - 5617
EP - 5623
JO - Nanoscale
JF - Nanoscale
SN - 2040-3364
IS - 13
ER -