Tunable Charge Injection via Solution-Processed Reduced Graphene Oxide Electrode for Vertical Schottky Barrier Transistors

Young Jin Choi, Jong Su Kim, Joon Young Cho, Hwi Je Woo, Jeehye Yang, Young Jae Song, Moon Sung Kang, Joong Tark Han, Jeong Ho Cho

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We demonstrate, for the first time, the use of a solution-processed reduced graphene oxide (rGO) layer as a work function tunable electrode in vertical Schottky barrier (SB) transistors. The rGO electrodes were deposited by simple spray-coating onto the substrate. The vertical device structure was formed by sandwiching a N,N′-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) organic semiconductor between rGO and Al electrodes. By varying the voltage applied to the gate electrode, the work function of rGO and thus the SB formed at the rGO-PTCDI-C8 interface could be effectively modulated. The resulting vertical SB transistors based on rGO-PTCDI-C8 heterostructures exhibited excellent electrical properties, including a maximum current density of 17.9 mA/cm2 and an on-off current ratio >103, which were comparable with the values obtained for the devices based on a CVD-grown graphene electrode. The charge injection properties of the vertical devices were systematically investigated through temperature-dependent transport measurements. Charge injection was dominated by thermionic emission at high temperature. As the temperature decreased, however, impurity state-assisted hopping occurred. At low temperature and negative gate voltage, the reduced width of barrier induced by a high drain voltage yielded Fowler-Nordheim tunneling at the interface. The use of scalable solution-processed rGO as a work function tunable electrode in vertical SB transistors opens up new opportunities for realizing future large-area flexible two-dimensional materials-based electronic devices.

Original languageEnglish
Pages (from-to)636-643
Number of pages8
JournalChemistry of Materials
Volume30
Issue number3
DOIs
Publication statusPublished - 2018 Feb 13

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Charge injection
Graphite
Oxides
Graphene
Transistors
Electrodes
Electric potential
Thermionic emission
Temperature
Semiconducting organic compounds
Field emission
Heterojunctions
Chemical vapor deposition
Electric properties
Current density
Impurities
Coatings
Substrates

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

Cite this

Choi, Young Jin ; Kim, Jong Su ; Cho, Joon Young ; Woo, Hwi Je ; Yang, Jeehye ; Song, Young Jae ; Kang, Moon Sung ; Han, Joong Tark ; Cho, Jeong Ho. / Tunable Charge Injection via Solution-Processed Reduced Graphene Oxide Electrode for Vertical Schottky Barrier Transistors. In: Chemistry of Materials. 2018 ; Vol. 30, No. 3. pp. 636-643.
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abstract = "We demonstrate, for the first time, the use of a solution-processed reduced graphene oxide (rGO) layer as a work function tunable electrode in vertical Schottky barrier (SB) transistors. The rGO electrodes were deposited by simple spray-coating onto the substrate. The vertical device structure was formed by sandwiching a N,N′-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) organic semiconductor between rGO and Al electrodes. By varying the voltage applied to the gate electrode, the work function of rGO and thus the SB formed at the rGO-PTCDI-C8 interface could be effectively modulated. The resulting vertical SB transistors based on rGO-PTCDI-C8 heterostructures exhibited excellent electrical properties, including a maximum current density of 17.9 mA/cm2 and an on-off current ratio >103, which were comparable with the values obtained for the devices based on a CVD-grown graphene electrode. The charge injection properties of the vertical devices were systematically investigated through temperature-dependent transport measurements. Charge injection was dominated by thermionic emission at high temperature. As the temperature decreased, however, impurity state-assisted hopping occurred. At low temperature and negative gate voltage, the reduced width of barrier induced by a high drain voltage yielded Fowler-Nordheim tunneling at the interface. The use of scalable solution-processed rGO as a work function tunable electrode in vertical SB transistors opens up new opportunities for realizing future large-area flexible two-dimensional materials-based electronic devices.",
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Tunable Charge Injection via Solution-Processed Reduced Graphene Oxide Electrode for Vertical Schottky Barrier Transistors. / Choi, Young Jin; Kim, Jong Su; Cho, Joon Young; Woo, Hwi Je; Yang, Jeehye; Song, Young Jae; Kang, Moon Sung; Han, Joong Tark; Cho, Jeong Ho.

In: Chemistry of Materials, Vol. 30, No. 3, 13.02.2018, p. 636-643.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Tunable Charge Injection via Solution-Processed Reduced Graphene Oxide Electrode for Vertical Schottky Barrier Transistors

AU - Choi, Young Jin

AU - Kim, Jong Su

AU - Cho, Joon Young

AU - Woo, Hwi Je

AU - Yang, Jeehye

AU - Song, Young Jae

AU - Kang, Moon Sung

AU - Han, Joong Tark

AU - Cho, Jeong Ho

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N2 - We demonstrate, for the first time, the use of a solution-processed reduced graphene oxide (rGO) layer as a work function tunable electrode in vertical Schottky barrier (SB) transistors. The rGO electrodes were deposited by simple spray-coating onto the substrate. The vertical device structure was formed by sandwiching a N,N′-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) organic semiconductor between rGO and Al electrodes. By varying the voltage applied to the gate electrode, the work function of rGO and thus the SB formed at the rGO-PTCDI-C8 interface could be effectively modulated. The resulting vertical SB transistors based on rGO-PTCDI-C8 heterostructures exhibited excellent electrical properties, including a maximum current density of 17.9 mA/cm2 and an on-off current ratio >103, which were comparable with the values obtained for the devices based on a CVD-grown graphene electrode. The charge injection properties of the vertical devices were systematically investigated through temperature-dependent transport measurements. Charge injection was dominated by thermionic emission at high temperature. As the temperature decreased, however, impurity state-assisted hopping occurred. At low temperature and negative gate voltage, the reduced width of barrier induced by a high drain voltage yielded Fowler-Nordheim tunneling at the interface. The use of scalable solution-processed rGO as a work function tunable electrode in vertical SB transistors opens up new opportunities for realizing future large-area flexible two-dimensional materials-based electronic devices.

AB - We demonstrate, for the first time, the use of a solution-processed reduced graphene oxide (rGO) layer as a work function tunable electrode in vertical Schottky barrier (SB) transistors. The rGO electrodes were deposited by simple spray-coating onto the substrate. The vertical device structure was formed by sandwiching a N,N′-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) organic semiconductor between rGO and Al electrodes. By varying the voltage applied to the gate electrode, the work function of rGO and thus the SB formed at the rGO-PTCDI-C8 interface could be effectively modulated. The resulting vertical SB transistors based on rGO-PTCDI-C8 heterostructures exhibited excellent electrical properties, including a maximum current density of 17.9 mA/cm2 and an on-off current ratio >103, which were comparable with the values obtained for the devices based on a CVD-grown graphene electrode. The charge injection properties of the vertical devices were systematically investigated through temperature-dependent transport measurements. Charge injection was dominated by thermionic emission at high temperature. As the temperature decreased, however, impurity state-assisted hopping occurred. At low temperature and negative gate voltage, the reduced width of barrier induced by a high drain voltage yielded Fowler-Nordheim tunneling at the interface. The use of scalable solution-processed rGO as a work function tunable electrode in vertical SB transistors opens up new opportunities for realizing future large-area flexible two-dimensional materials-based electronic devices.

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