Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS2 Heterostructure Devices

Servin Rathi, Inyeal Lee, Dongsuk Lim, Jianwei Wang, Yuichi Ochiai, Nobuyuki Aoki, Kenji Watanabe, Takashi Taniguchi, Gwan Hyoung Lee, Young Jun Yu, Philip Kim, Gil Ho Kim

Research output: Contribution to journalArticle

78 Citations (Scopus)

Abstract

Lateral and vertical two-dimensional heterostructure devices, in particular graphene-MoS2, have attracted profound interest as they offer additional functionalities over normal two-dimensional devices. Here, we have carried out electrical and optical characterization of graphene-MoS2 heterostructure. The few-layer MoS2 devices with metal electrode at one end and monolayer graphene electrode at the other end show nonlinearity in drain current with drain voltage sweep due to asymmetrical Schottky barrier height at the contacts and can be modulated with an external gate field. The doping effect of MoS2 on graphene was observed as double Dirac points in the transfer characteristics of the graphene field-effect transistor (FET) with a few-layer MoS2 overlapping the middle part of the channel, whereas the underlapping of graphene have negligible effect on MoS2 FET characteristics, which showed typical n-type behavior. The heterostructure also exhibits a strongest optical response for 520 nm wavelength, which decreases with higher wavelengths. Another distinct feature observed in the heterostructure is the peak in the photocurrent around zero gate voltage. This peak is distinguished from conventional MoS2 FETs, which show a continuous increase in photocurrent with back-gate voltage. These results offer significant insight and further enhance the understanding of the graphene-MoS2 heterostructure.

Original languageEnglish
Pages (from-to)5017-5024
Number of pages8
JournalNano letters
Volume15
Issue number8
DOIs
Publication statusPublished - 2015 Aug 12

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Graphene
Heterojunctions
Monolayers
graphene
Field effect transistors
field effect transistors
Photocurrents
photocurrents
Electric potential
electric potential
Wavelength
Electrodes
electrodes
Drain current
wavelengths
Metals
nonlinearity
Doping (additives)
metals

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Rathi, Servin ; Lee, Inyeal ; Lim, Dongsuk ; Wang, Jianwei ; Ochiai, Yuichi ; Aoki, Nobuyuki ; Watanabe, Kenji ; Taniguchi, Takashi ; Lee, Gwan Hyoung ; Yu, Young Jun ; Kim, Philip ; Kim, Gil Ho. / Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS2 Heterostructure Devices. In: Nano letters. 2015 ; Vol. 15, No. 8. pp. 5017-5024.
@article{a363b78970024c5a86302a40fe13eb75,
title = "Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS2 Heterostructure Devices",
abstract = "Lateral and vertical two-dimensional heterostructure devices, in particular graphene-MoS2, have attracted profound interest as they offer additional functionalities over normal two-dimensional devices. Here, we have carried out electrical and optical characterization of graphene-MoS2 heterostructure. The few-layer MoS2 devices with metal electrode at one end and monolayer graphene electrode at the other end show nonlinearity in drain current with drain voltage sweep due to asymmetrical Schottky barrier height at the contacts and can be modulated with an external gate field. The doping effect of MoS2 on graphene was observed as double Dirac points in the transfer characteristics of the graphene field-effect transistor (FET) with a few-layer MoS2 overlapping the middle part of the channel, whereas the underlapping of graphene have negligible effect on MoS2 FET characteristics, which showed typical n-type behavior. The heterostructure also exhibits a strongest optical response for 520 nm wavelength, which decreases with higher wavelengths. Another distinct feature observed in the heterostructure is the peak in the photocurrent around zero gate voltage. This peak is distinguished from conventional MoS2 FETs, which show a continuous increase in photocurrent with back-gate voltage. These results offer significant insight and further enhance the understanding of the graphene-MoS2 heterostructure.",
author = "Servin Rathi and Inyeal Lee and Dongsuk Lim and Jianwei Wang and Yuichi Ochiai and Nobuyuki Aoki and Kenji Watanabe and Takashi Taniguchi and Lee, {Gwan Hyoung} and Yu, {Young Jun} and Philip Kim and Kim, {Gil Ho}",
year = "2015",
month = "8",
day = "12",
doi = "10.1021/acs.nanolett.5b01030",
language = "English",
volume = "15",
pages = "5017--5024",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "8",

}

Rathi, S, Lee, I, Lim, D, Wang, J, Ochiai, Y, Aoki, N, Watanabe, K, Taniguchi, T, Lee, GH, Yu, YJ, Kim, P & Kim, GH 2015, 'Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS2 Heterostructure Devices', Nano letters, vol. 15, no. 8, pp. 5017-5024. https://doi.org/10.1021/acs.nanolett.5b01030

Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS2 Heterostructure Devices. / Rathi, Servin; Lee, Inyeal; Lim, Dongsuk; Wang, Jianwei; Ochiai, Yuichi; Aoki, Nobuyuki; Watanabe, Kenji; Taniguchi, Takashi; Lee, Gwan Hyoung; Yu, Young Jun; Kim, Philip; Kim, Gil Ho.

In: Nano letters, Vol. 15, No. 8, 12.08.2015, p. 5017-5024.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS2 Heterostructure Devices

AU - Rathi, Servin

AU - Lee, Inyeal

AU - Lim, Dongsuk

AU - Wang, Jianwei

AU - Ochiai, Yuichi

AU - Aoki, Nobuyuki

AU - Watanabe, Kenji

AU - Taniguchi, Takashi

AU - Lee, Gwan Hyoung

AU - Yu, Young Jun

AU - Kim, Philip

AU - Kim, Gil Ho

PY - 2015/8/12

Y1 - 2015/8/12

N2 - Lateral and vertical two-dimensional heterostructure devices, in particular graphene-MoS2, have attracted profound interest as they offer additional functionalities over normal two-dimensional devices. Here, we have carried out electrical and optical characterization of graphene-MoS2 heterostructure. The few-layer MoS2 devices with metal electrode at one end and monolayer graphene electrode at the other end show nonlinearity in drain current with drain voltage sweep due to asymmetrical Schottky barrier height at the contacts and can be modulated with an external gate field. The doping effect of MoS2 on graphene was observed as double Dirac points in the transfer characteristics of the graphene field-effect transistor (FET) with a few-layer MoS2 overlapping the middle part of the channel, whereas the underlapping of graphene have negligible effect on MoS2 FET characteristics, which showed typical n-type behavior. The heterostructure also exhibits a strongest optical response for 520 nm wavelength, which decreases with higher wavelengths. Another distinct feature observed in the heterostructure is the peak in the photocurrent around zero gate voltage. This peak is distinguished from conventional MoS2 FETs, which show a continuous increase in photocurrent with back-gate voltage. These results offer significant insight and further enhance the understanding of the graphene-MoS2 heterostructure.

AB - Lateral and vertical two-dimensional heterostructure devices, in particular graphene-MoS2, have attracted profound interest as they offer additional functionalities over normal two-dimensional devices. Here, we have carried out electrical and optical characterization of graphene-MoS2 heterostructure. The few-layer MoS2 devices with metal electrode at one end and monolayer graphene electrode at the other end show nonlinearity in drain current with drain voltage sweep due to asymmetrical Schottky barrier height at the contacts and can be modulated with an external gate field. The doping effect of MoS2 on graphene was observed as double Dirac points in the transfer characteristics of the graphene field-effect transistor (FET) with a few-layer MoS2 overlapping the middle part of the channel, whereas the underlapping of graphene have negligible effect on MoS2 FET characteristics, which showed typical n-type behavior. The heterostructure also exhibits a strongest optical response for 520 nm wavelength, which decreases with higher wavelengths. Another distinct feature observed in the heterostructure is the peak in the photocurrent around zero gate voltage. This peak is distinguished from conventional MoS2 FETs, which show a continuous increase in photocurrent with back-gate voltage. These results offer significant insight and further enhance the understanding of the graphene-MoS2 heterostructure.

UR - http://www.scopus.com/inward/record.url?scp=84939230676&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84939230676&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.5b01030

DO - 10.1021/acs.nanolett.5b01030

M3 - Article

AN - SCOPUS:84939230676

VL - 15

SP - 5017

EP - 5024

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 8

ER -