Tungsten Dichalcogenide Nanoflake/InGaZnO Thin-Film Heterojunction for Photodetector, Inverter, and AC Rectifier Circuits

Silah Lee; Han Sol Lee; Sanghyuck Yu; Ji Hoon Park; Heesun Bae; Seongil Im

doi:10.1002/aelm.202000026

Tungsten Dichalcogenide Nanoflake/InGaZnO Thin-Film Heterojunction for Photodetector, Inverter, and AC Rectifier Circuits

Silah Lee, Han Sol Lee, Sanghyuck Yu, Ji Hoon Park, Heesun Bae, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Heterojunction PN diode and inverter circuits are fabricated and presented, combining two-dimensional WSe₂ nanoflake and amorphous InGaZnO (a-IGZO) thin film on a glass substrate. A heterojunction p-WSe₂/n-IGZO diode exhibits rectifying characteristics and effectively responds to red light (λ = 620 nm) under a reverse bias. The combination of a heterojunction PN diode and IGZO field effect transistor (FET) leads to a diode-load inverter showing a peak voltage gain of about 12 at a supply voltage of 5 V. The same integration from the PN diode and n-FET displays the capability of visible light detection when a reverse-bias voltage is applied to the PN diode. Furthermore, after oxygen plasma treatment on the PN diode, it shows dramatically enhanced on/off rectification ratio of ≈5 × 10⁵ due to the hole doping effect on the WSe₂ nanoflake. Such an improved PN diode leads to an alternating current rectifier circuit as integrated with IGZO FET.

Original language	English
Article number	2000026
Journal	Advanced Electronic Materials
Volume	6
Issue number	5
DOIs	https://doi.org/10.1002/aelm.202000026
Publication status	Published - 2020 May 1

Bibliographical note

Funding Information:
This research was supported by the Creative Materials Discovery Program (2015M3D1A1068061) and Samsung Display Co., Ltd. Authors also acknowledge the financial support from the National Research Foundation of Korea (2017R1A5A1014862 and 2017R1D1A1B03028257).

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

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10.1002/aelm.202000026

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@article{852662763c024b8aa9c7046708805177,

title = "Tungsten Dichalcogenide Nanoflake/InGaZnO Thin-Film Heterojunction for Photodetector, Inverter, and AC Rectifier Circuits",

abstract = "Heterojunction PN diode and inverter circuits are fabricated and presented, combining two-dimensional WSe2 nanoflake and amorphous InGaZnO (a-IGZO) thin film on a glass substrate. A heterojunction p-WSe2/n-IGZO diode exhibits rectifying characteristics and effectively responds to red light (λ = 620 nm) under a reverse bias. The combination of a heterojunction PN diode and IGZO field effect transistor (FET) leads to a diode-load inverter showing a peak voltage gain of about 12 at a supply voltage of 5 V. The same integration from the PN diode and n-FET displays the capability of visible light detection when a reverse-bias voltage is applied to the PN diode. Furthermore, after oxygen plasma treatment on the PN diode, it shows dramatically enhanced on/off rectification ratio of ≈5 × 105 due to the hole doping effect on the WSe2 nanoflake. Such an improved PN diode leads to an alternating current rectifier circuit as integrated with IGZO FET.",

author = "Silah Lee and Lee, {Han Sol} and Sanghyuck Yu and Park, {Ji Hoon} and Heesun Bae and Seongil Im",

note = "Funding Information: This research was supported by the Creative Materials Discovery Program (2015M3D1A1068061) and Samsung Display Co., Ltd. Authors also acknowledge the financial support from the National Research Foundation of Korea (2017R1A5A1014862 and 2017R1D1A1B03028257).",

year = "2020",

month = may,

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doi = "10.1002/aelm.202000026",

language = "English",

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T1 - Tungsten Dichalcogenide Nanoflake/InGaZnO Thin-Film Heterojunction for Photodetector, Inverter, and AC Rectifier Circuits

AU - Lee, Silah

AU - Lee, Han Sol

AU - Yu, Sanghyuck

AU - Park, Ji Hoon

AU - Bae, Heesun

AU - Im, Seongil

N1 - Funding Information: This research was supported by the Creative Materials Discovery Program (2015M3D1A1068061) and Samsung Display Co., Ltd. Authors also acknowledge the financial support from the National Research Foundation of Korea (2017R1A5A1014862 and 2017R1D1A1B03028257).

PY - 2020/5/1

Y1 - 2020/5/1

N2 - Heterojunction PN diode and inverter circuits are fabricated and presented, combining two-dimensional WSe2 nanoflake and amorphous InGaZnO (a-IGZO) thin film on a glass substrate. A heterojunction p-WSe2/n-IGZO diode exhibits rectifying characteristics and effectively responds to red light (λ = 620 nm) under a reverse bias. The combination of a heterojunction PN diode and IGZO field effect transistor (FET) leads to a diode-load inverter showing a peak voltage gain of about 12 at a supply voltage of 5 V. The same integration from the PN diode and n-FET displays the capability of visible light detection when a reverse-bias voltage is applied to the PN diode. Furthermore, after oxygen plasma treatment on the PN diode, it shows dramatically enhanced on/off rectification ratio of ≈5 × 105 due to the hole doping effect on the WSe2 nanoflake. Such an improved PN diode leads to an alternating current rectifier circuit as integrated with IGZO FET.

AB - Heterojunction PN diode and inverter circuits are fabricated and presented, combining two-dimensional WSe2 nanoflake and amorphous InGaZnO (a-IGZO) thin film on a glass substrate. A heterojunction p-WSe2/n-IGZO diode exhibits rectifying characteristics and effectively responds to red light (λ = 620 nm) under a reverse bias. The combination of a heterojunction PN diode and IGZO field effect transistor (FET) leads to a diode-load inverter showing a peak voltage gain of about 12 at a supply voltage of 5 V. The same integration from the PN diode and n-FET displays the capability of visible light detection when a reverse-bias voltage is applied to the PN diode. Furthermore, after oxygen plasma treatment on the PN diode, it shows dramatically enhanced on/off rectification ratio of ≈5 × 105 due to the hole doping effect on the WSe2 nanoflake. Such an improved PN diode leads to an alternating current rectifier circuit as integrated with IGZO FET.

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