Abstract
A method to measure and tune the spring constant of tips in a cantilever-free array by adjusting the mechanical properties of the elastomeric layer on which it is based is reported. Using this technique, large-area silicon tip arrays are fabricated with spring constants tuned ranging from 7 to 150 N/m. To illustrate the benefit of utilizing a lower spring constant array, the ability to pattern on a delicate 50 nm silicon nitride substrate is explored.
Original language | English |
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Pages (from-to) | 664-667 |
Number of pages | 4 |
Journal | Nano letters |
Volume | 13 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2013 Feb 13 |
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All Science Journal Classification (ASJC) codes
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
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Tuning the spring constant of cantilever-free tip arrays. / Eichelsdoerfer, Daniel J.; Brown, Keith A.; Boya, Radha; Shim, Wooyoung; Mirkin, Chad A.
In: Nano letters, Vol. 13, No. 2, 13.02.2013, p. 664-667.Research output: Contribution to journal › Article
TY - JOUR
T1 - Tuning the spring constant of cantilever-free tip arrays
AU - Eichelsdoerfer, Daniel J.
AU - Brown, Keith A.
AU - Boya, Radha
AU - Shim, Wooyoung
AU - Mirkin, Chad A.
PY - 2013/2/13
Y1 - 2013/2/13
N2 - A method to measure and tune the spring constant of tips in a cantilever-free array by adjusting the mechanical properties of the elastomeric layer on which it is based is reported. Using this technique, large-area silicon tip arrays are fabricated with spring constants tuned ranging from 7 to 150 N/m. To illustrate the benefit of utilizing a lower spring constant array, the ability to pattern on a delicate 50 nm silicon nitride substrate is explored.
AB - A method to measure and tune the spring constant of tips in a cantilever-free array by adjusting the mechanical properties of the elastomeric layer on which it is based is reported. Using this technique, large-area silicon tip arrays are fabricated with spring constants tuned ranging from 7 to 150 N/m. To illustrate the benefit of utilizing a lower spring constant array, the ability to pattern on a delicate 50 nm silicon nitride substrate is explored.
UR - http://www.scopus.com/inward/record.url?scp=84873680997&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84873680997&partnerID=8YFLogxK
U2 - 10.1021/nl304268u
DO - 10.1021/nl304268u
M3 - Article
C2 - 23286875
AN - SCOPUS:84873680997
VL - 13
SP - 664
EP - 667
JO - Nano Letters
JF - Nano Letters
SN - 1530-6984
IS - 2
ER -