Tuning the thickness of black phosphorus: Via ion bombardment-free plasma etching for device performance improvement

Geonyeop Lee, Jong Young Lee, Gwan Hyoung Lee, Jihyun Kim

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Layer-by-layer thinning without structural damage is essential for integrating two-dimensional materials (such as black phosphorus (BP)) in nanoelectronics, because their properties are primarily thickness-dependent. Unfortunately, most known etching processes for black phosphorus carry the possibility of structural degradation due to ion bombardment and thermal attack. In this study, we report a mild chemical thinning method free from causing physical damage, performed by modifying the sample configuration in a conventional reactive ion etching system. The thickness of mechanically exfoliated BP flakes can be easily controlled by modified plasma treatment, and these flakes maintain perfect crystallinity. Field-effect transistors based on thickness-controlled BP showed improved device performance after ion bombardment-free plasma etching. Our work provides a new way to realize the full potential of BP-based electronic devices.

Original languageEnglish
Pages (from-to)6234-6239
Number of pages6
JournalJournal of Materials Chemistry C
Volume4
Issue number26
DOIs
Publication statusPublished - 2016 Jan 1

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

Cite this