Tunneling Electroresistance Effect with Diode Characteristic for Cross-Point Memory

Hong Sub Lee, Hyung Ho Park

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Cross-point memory architecture (CPMA) by using memristors has attracted considerable attention because of its high-density integration. However, a common and significant drawback of the CPMA is related to crosstalk issues between cells by sneak currents. This study demonstrated the sneak current free resistive switching characteristic of a ferroelectric tunnel diode (FTD) memristor for a CPMA by utilizing a novel concept of a ferroelectric quadrangle and triangle barrier switch. A FTD of Au/BaTiO3 (5 nm)/Nb-doped SrTiO3 (100) was used to obtain a desirable memristive effect for the CPMA. The FTD could reversibly change the shape of the ferroelectric potential from a quadrangle to a triangle. The effect included high nonlinearity and diode characteristics. It was derived from utilizing different sequences of carrier transport mechanisms such as the direct tunneling current, Fowler-Nordheim tunneling, and thermionic emission. The FTD memristor demonstrated the feasibility of sneak current-free high-density CPMA.

Original languageEnglish
Pages (from-to)15476-15481
Number of pages6
JournalACS Applied Materials and Interfaces
Volume8
Issue number24
DOIs
Publication statusPublished - 2016 Jun 22

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2015R1A2A1A15054541). The experiments atthe PLS were supported in part by MSIP and POSTECH.

Publisher Copyright:
© 2016 American Chemical Society.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Fingerprint Dive into the research topics of 'Tunneling Electroresistance Effect with Diode Characteristic for Cross-Point Memory'. Together they form a unique fingerprint.

Cite this