Tunneling Electroresistance Effect with Diode Characteristic for Cross-Point Memory

Hong Sub Lee, Hyung Ho Park

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Cross-point memory architecture (CPMA) by using memristors has attracted considerable attention because of its high-density integration. However, a common and significant drawback of the CPMA is related to crosstalk issues between cells by sneak currents. This study demonstrated the sneak current free resistive switching characteristic of a ferroelectric tunnel diode (FTD) memristor for a CPMA by utilizing a novel concept of a ferroelectric quadrangle and triangle barrier switch. A FTD of Au/BaTiO3 (5 nm)/Nb-doped SrTiO3 (100) was used to obtain a desirable memristive effect for the CPMA. The FTD could reversibly change the shape of the ferroelectric potential from a quadrangle to a triangle. The effect included high nonlinearity and diode characteristics. It was derived from utilizing different sequences of carrier transport mechanisms such as the direct tunneling current, Fowler-Nordheim tunneling, and thermionic emission. The FTD memristor demonstrated the feasibility of sneak current-free high-density CPMA.

Original languageEnglish
Pages (from-to)15476-15481
Number of pages6
JournalACS Applied Materials and Interfaces
Volume8
Issue number24
DOIs
Publication statusPublished - 2016 Jun 22

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Memory architecture
Tunnel diodes
Ferroelectric materials
Diodes
Memristors
Data storage equipment
Thermionic emission
Electron tunneling
Carrier transport
Crosstalk
Field emission
Switches

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

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Tunneling Electroresistance Effect with Diode Characteristic for Cross-Point Memory. / Lee, Hong Sub; Park, Hyung Ho.

In: ACS Applied Materials and Interfaces, Vol. 8, No. 24, 22.06.2016, p. 15476-15481.

Research output: Contribution to journalArticle

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