Tunneling Properties of the Charge Carriers through Sub-2-nm-Thick Oxide in Ge/a - Ge O2/Ge Structures Using the First-Principles Scattering-State Method

Eunjung Ko, Kai Liu, Cheol Seong Hwang, Hyoung Joon Choi, Jung Hae Choi

Research output: Contribution to journalArticle

Abstract

The quantum-mechanical tunneling passing through the sub-2-nm-thick oxide in Ge/a-GeO2/Ge structures is presented, using the first-principles scattering-state method, where a stands for the amorphous phase. The suboxide interface layer (IL) between Ge and the dioxide region (DOX) does not play a critical role in blocking tunneling due to the presence of Ge - Ge bonds in it. The thickness of DOX, where all the Ge has four Ge - O bonds, is the effective tunneling-blocking thickness and the thickness for the thinnest usable a-GeO2 is approximately 0.85 nm. The width and magnitude of the band offset differently affect the tunneling in the sub-2-nm-thick oxide. The valence-band offset is larger and thicker than the conduction-band offset for all the structures, resulting in the smaller tunneling current of the holes than of the electrons. It is also found that the effect of the hydrogen passivation at the IL on tunneling is not evident in semiconductor/a-oxide. The crystallographic orientation of Ge has no distinct effect on the band-gap alignment and the tunneling current in Ge/a-GeO2/Ge structures, consistent with the experimental results about the effect of the Ge orientation on the interface properties.

Original languageEnglish
Article number034016
JournalPhysical Review Applied
Volume11
Issue number3
DOIs
Publication statusPublished - 2019 Mar 7

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charge carriers
oxides
scattering
dioxides
passivity
conduction bands
alignment
valence
hydrogen
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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title = "Tunneling Properties of the Charge Carriers through Sub-2-nm-Thick Oxide in Ge/a - Ge O2/Ge Structures Using the First-Principles Scattering-State Method",
abstract = "The quantum-mechanical tunneling passing through the sub-2-nm-thick oxide in Ge/a-GeO2/Ge structures is presented, using the first-principles scattering-state method, where a stands for the amorphous phase. The suboxide interface layer (IL) between Ge and the dioxide region (DOX) does not play a critical role in blocking tunneling due to the presence of Ge - Ge bonds in it. The thickness of DOX, where all the Ge has four Ge - O bonds, is the effective tunneling-blocking thickness and the thickness for the thinnest usable a-GeO2 is approximately 0.85 nm. The width and magnitude of the band offset differently affect the tunneling in the sub-2-nm-thick oxide. The valence-band offset is larger and thicker than the conduction-band offset for all the structures, resulting in the smaller tunneling current of the holes than of the electrons. It is also found that the effect of the hydrogen passivation at the IL on tunneling is not evident in semiconductor/a-oxide. The crystallographic orientation of Ge has no distinct effect on the band-gap alignment and the tunneling current in Ge/a-GeO2/Ge structures, consistent with the experimental results about the effect of the Ge orientation on the interface properties.",
author = "Eunjung Ko and Kai Liu and Hwang, {Cheol Seong} and Choi, {Hyoung Joon} and Choi, {Jung Hae}",
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Tunneling Properties of the Charge Carriers through Sub-2-nm-Thick Oxide in Ge/a - Ge O2/Ge Structures Using the First-Principles Scattering-State Method. / Ko, Eunjung; Liu, Kai; Hwang, Cheol Seong; Choi, Hyoung Joon; Choi, Jung Hae.

In: Physical Review Applied, Vol. 11, No. 3, 034016, 07.03.2019.

Research output: Contribution to journalArticle

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