Tunneling properties versus electronic structures in Si/SiO2/Si junctions from first principles

Eunjung Ko, Kwang Ryeol Lee, Hyoung Joon Choi

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Using first-principles calculations, we study tunneling properties and electronic structures of Si(001)/SiO2/Si(001) junctions in a wide energy range covering the local energy gap in the SiO2 regions. We show that the tunneling spectra T(E) as functions of energy E have overall similarity to the projected densities of states (PDOS) at the centers of the SiO2 regions, but T(E) and PDOS have significant difference in their dependencies on the SiO2 thickness. From the energy dependencies of T(E) and PDOS, distinctive energy ranges are recognized in the valence and conduction bands, reflecting the local electronic structures in the SiO 2 region induced from the Si regions. From the difference in the SiO2-thickness dependencies of T(E) and PDOS and from eigenchannel analysis, we find that the tunneling wave function inside the SiO2 region decreases with a decay rate which itself decreases as the tunneling distance increases, resulting in a smaller averaged decay rate per length for a thicker SiO2 region. These results provide a rich picture for the SiO2 barrier in the aspects of tunneling and local electronic structures, and a theoretical framework generally applicable to other tunneling barriers.

Original languageEnglish
Article number035318
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume88
Issue number3
DOIs
Publication statusPublished - 2013 Jul 29

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Electronic structure
electronic structure
Wave functions
Valence bands
Conduction bands
Electron energy levels
decay rates
Energy gap
energy
conduction bands
coverings
wave functions
valence

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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abstract = "Using first-principles calculations, we study tunneling properties and electronic structures of Si(001)/SiO2/Si(001) junctions in a wide energy range covering the local energy gap in the SiO2 regions. We show that the tunneling spectra T(E) as functions of energy E have overall similarity to the projected densities of states (PDOS) at the centers of the SiO2 regions, but T(E) and PDOS have significant difference in their dependencies on the SiO2 thickness. From the energy dependencies of T(E) and PDOS, distinctive energy ranges are recognized in the valence and conduction bands, reflecting the local electronic structures in the SiO 2 region induced from the Si regions. From the difference in the SiO2-thickness dependencies of T(E) and PDOS and from eigenchannel analysis, we find that the tunneling wave function inside the SiO2 region decreases with a decay rate which itself decreases as the tunneling distance increases, resulting in a smaller averaged decay rate per length for a thicker SiO2 region. These results provide a rich picture for the SiO2 barrier in the aspects of tunneling and local electronic structures, and a theoretical framework generally applicable to other tunneling barriers.",
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Tunneling properties versus electronic structures in Si/SiO2/Si junctions from first principles. / Ko, Eunjung; Lee, Kwang Ryeol; Choi, Hyoung Joon.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 88, No. 3, 035318, 29.07.2013.

Research output: Contribution to journalArticle

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