Two-dimensional electron gas formed on the indium-adsorbed Si (111) 3×3-Au surface

J. K. Kim, K. S. Kim, J. L. McChesney, E. Rotenberg, H. N. Hwang, C. C. Hwang, H. W. Yeom

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Electronic structure of the In-adsorbed Si (111) 3×3-Au surface was investigated by core-level and angle-resolved photoelectron spectroscopy. On the Si (111) 3×3-Au surface, In adsorbates were reported to remove the characteristic domain-wall network and produce a very well-ordered 3×3 surface phase. Detailed band dispersions and Fermi surfaces were mapped for the pristine and In-dosed Si (111) 3×3-Au surfaces. After the In adsorption, the surface bands shift toward a higher binding energy, increasing substantially the electron filling of the metallic band along with a significant sharpening of the spectral features. The resulting Fermi surface indicates the formation of a perfect isotropic two-dimensional electron-gas system filled with 0.3 electrons. This band structure agrees well with that expected, in a recent density-functional theory calculation, for the conjugate-honeycomb trimer model of the pristine Si (111) 3×3-Au surface. Core-level spectra indicate that In adsorbates interact mostly with Si surface atoms. The possible origins of the electronic structure modification by In adsorbates are discussed. The importance of the domain wall and the indirect role of In adsorbates are emphasized. This system provides an interesting playground for the study of two-dimensional electron gas on solid surfaces.

Original languageEnglish
Article number075312
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume80
Issue number7
DOIs
Publication statusPublished - 2009 Aug 20

Fingerprint

Indium
Two dimensional electron gas
indium
electron gas
Adsorbates
Core levels
Fermi surface
Domain walls
Fermi surfaces
Electronic structure
domain wall
electronic structure
Electrons
Photoelectron spectroscopy
trimers
Binding energy
Dispersions
solid surfaces
Band structure
Density functional theory

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Kim, J. K. ; Kim, K. S. ; McChesney, J. L. ; Rotenberg, E. ; Hwang, H. N. ; Hwang, C. C. ; Yeom, H. W. / Two-dimensional electron gas formed on the indium-adsorbed Si (111) 3×3-Au surface. In: Physical Review B - Condensed Matter and Materials Physics. 2009 ; Vol. 80, No. 7.
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abstract = "Electronic structure of the In-adsorbed Si (111) 3×3-Au surface was investigated by core-level and angle-resolved photoelectron spectroscopy. On the Si (111) 3×3-Au surface, In adsorbates were reported to remove the characteristic domain-wall network and produce a very well-ordered 3×3 surface phase. Detailed band dispersions and Fermi surfaces were mapped for the pristine and In-dosed Si (111) 3×3-Au surfaces. After the In adsorption, the surface bands shift toward a higher binding energy, increasing substantially the electron filling of the metallic band along with a significant sharpening of the spectral features. The resulting Fermi surface indicates the formation of a perfect isotropic two-dimensional electron-gas system filled with 0.3 electrons. This band structure agrees well with that expected, in a recent density-functional theory calculation, for the conjugate-honeycomb trimer model of the pristine Si (111) 3×3-Au surface. Core-level spectra indicate that In adsorbates interact mostly with Si surface atoms. The possible origins of the electronic structure modification by In adsorbates are discussed. The importance of the domain wall and the indirect role of In adsorbates are emphasized. This system provides an interesting playground for the study of two-dimensional electron gas on solid surfaces.",
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Two-dimensional electron gas formed on the indium-adsorbed Si (111) 3×3-Au surface. / Kim, J. K.; Kim, K. S.; McChesney, J. L.; Rotenberg, E.; Hwang, H. N.; Hwang, C. C.; Yeom, H. W.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 80, No. 7, 075312, 20.08.2009.

Research output: Contribution to journalArticle

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AB - Electronic structure of the In-adsorbed Si (111) 3×3-Au surface was investigated by core-level and angle-resolved photoelectron spectroscopy. On the Si (111) 3×3-Au surface, In adsorbates were reported to remove the characteristic domain-wall network and produce a very well-ordered 3×3 surface phase. Detailed band dispersions and Fermi surfaces were mapped for the pristine and In-dosed Si (111) 3×3-Au surfaces. After the In adsorption, the surface bands shift toward a higher binding energy, increasing substantially the electron filling of the metallic band along with a significant sharpening of the spectral features. The resulting Fermi surface indicates the formation of a perfect isotropic two-dimensional electron-gas system filled with 0.3 electrons. This band structure agrees well with that expected, in a recent density-functional theory calculation, for the conjugate-honeycomb trimer model of the pristine Si (111) 3×3-Au surface. Core-level spectra indicate that In adsorbates interact mostly with Si surface atoms. The possible origins of the electronic structure modification by In adsorbates are discussed. The importance of the domain wall and the indirect role of In adsorbates are emphasized. This system provides an interesting playground for the study of two-dimensional electron gas on solid surfaces.

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