Two-dimensional growth of germanium under a diffusion limited aggregation environment

Jaejun Lee, Sung Wook Kim, Youn Ho Park, Jeong Min Park, Yeon Joo Kim, Sangwon Park, Jeen Moon Yang, Heon Jin Choi

Research output: Contribution to journalArticle

Abstract

The discovery of graphene has triggered immense interest in two-dimensional (2D) nanomaterials. However, the 2D growth of several layerstructured crystals such as graphene, MoS2, and black phosphorus is difficult and limited. Here, we report the gas-phase 2D growth of germanium (Ge) with a cubic structure to form Ge nanosheets (GeNSs) using the chemical vapor deposition method. Our investigation revealed that a diffusion limited aggregation (DLA) environment is essential for the 2D growth of Ge that induces a dendritic growth in the <110> direction and suppresses the growth in the [111] direction. The growth behavior was similar to the 2D growth of silicon reported previously. Thus, it can be concluded that a DLA environment is essential for the 2D growth of cubic structured materials. The electron density and mobility of GeNSs were found to be 1.3 × 1015 cm−3 and 792 cm2/Vs, respectively, and their resistivity varied with the intensity of light. [Figure not available: see fulltext.]

Original languageEnglish
Pages (from-to)91-96
Number of pages6
JournalElectronic Materials Letters
Volume13
Issue number1
DOIs
Publication statusPublished - 2017 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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