Two-dimensional growth of germanium under a diffusion limited aggregation environment

Jaejun Lee, Sung Wook Kim, Youn Ho Park, Jeong Min Park, Yeon Joo Kim, Sangwon Park, Jeen Moon Yang, Heon-Jin Choi

Research output: Contribution to journalArticle

Abstract

The discovery of graphene has triggered immense interest in two-dimensional (2D) nanomaterials. However, the 2D growth of several layerstructured crystals such as graphene, MoS 2 , and black phosphorus is difficult and limited. Here, we report the gas-phase 2D growth of germanium (Ge) with a cubic structure to form Ge nanosheets (GeNSs) using the chemical vapor deposition method. Our investigation revealed that a diffusion limited aggregation (DLA) environment is essential for the 2D growth of Ge that induces a dendritic growth in the <110> direction and suppresses the growth in the [111] direction. The growth behavior was similar to the 2D growth of silicon reported previously. Thus, it can be concluded that a DLA environment is essential for the 2D growth of cubic structured materials. The electron density and mobility of GeNSs were found to be 1.3 × 10 15 cm −3 and 792 cm 2 /Vs, respectively, and their resistivity varied with the intensity of light. [Figure not available: see fulltext.]

Original languageEnglish
Pages (from-to)91-96
Number of pages6
JournalElectronic Materials Letters
Volume13
Issue number1
DOIs
Publication statusPublished - 2017 Jan 1

Fingerprint

Germanium
Agglomeration
Graphite
Nanosheets
Graphene
Electron mobility
Silicon
Nanostructured materials
Phosphorus
Carrier concentration
Chemical vapor deposition
Gases
Crystals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Lee, Jaejun ; Kim, Sung Wook ; Park, Youn Ho ; Park, Jeong Min ; Kim, Yeon Joo ; Park, Sangwon ; Yang, Jeen Moon ; Choi, Heon-Jin. / Two-dimensional growth of germanium under a diffusion limited aggregation environment. In: Electronic Materials Letters. 2017 ; Vol. 13, No. 1. pp. 91-96.
@article{355d52758fd84040bddf7f54808ed67d,
title = "Two-dimensional growth of germanium under a diffusion limited aggregation environment",
abstract = "The discovery of graphene has triggered immense interest in two-dimensional (2D) nanomaterials. However, the 2D growth of several layerstructured crystals such as graphene, MoS 2 , and black phosphorus is difficult and limited. Here, we report the gas-phase 2D growth of germanium (Ge) with a cubic structure to form Ge nanosheets (GeNSs) using the chemical vapor deposition method. Our investigation revealed that a diffusion limited aggregation (DLA) environment is essential for the 2D growth of Ge that induces a dendritic growth in the <110> direction and suppresses the growth in the [111] direction. The growth behavior was similar to the 2D growth of silicon reported previously. Thus, it can be concluded that a DLA environment is essential for the 2D growth of cubic structured materials. The electron density and mobility of GeNSs were found to be 1.3 × 10 15 cm −3 and 792 cm 2 /Vs, respectively, and their resistivity varied with the intensity of light. [Figure not available: see fulltext.]",
author = "Jaejun Lee and Kim, {Sung Wook} and Park, {Youn Ho} and Park, {Jeong Min} and Kim, {Yeon Joo} and Sangwon Park and Yang, {Jeen Moon} and Heon-Jin Choi",
year = "2017",
month = "1",
day = "1",
doi = "10.1007/s13391-017-6182-x",
language = "English",
volume = "13",
pages = "91--96",
journal = "Electronic Materials Letters",
issn = "1738-8090",
publisher = "Springer Netherlands",
number = "1",

}

Two-dimensional growth of germanium under a diffusion limited aggregation environment. / Lee, Jaejun; Kim, Sung Wook; Park, Youn Ho; Park, Jeong Min; Kim, Yeon Joo; Park, Sangwon; Yang, Jeen Moon; Choi, Heon-Jin.

In: Electronic Materials Letters, Vol. 13, No. 1, 01.01.2017, p. 91-96.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Two-dimensional growth of germanium under a diffusion limited aggregation environment

AU - Lee, Jaejun

AU - Kim, Sung Wook

AU - Park, Youn Ho

AU - Park, Jeong Min

AU - Kim, Yeon Joo

AU - Park, Sangwon

AU - Yang, Jeen Moon

AU - Choi, Heon-Jin

PY - 2017/1/1

Y1 - 2017/1/1

N2 - The discovery of graphene has triggered immense interest in two-dimensional (2D) nanomaterials. However, the 2D growth of several layerstructured crystals such as graphene, MoS 2 , and black phosphorus is difficult and limited. Here, we report the gas-phase 2D growth of germanium (Ge) with a cubic structure to form Ge nanosheets (GeNSs) using the chemical vapor deposition method. Our investigation revealed that a diffusion limited aggregation (DLA) environment is essential for the 2D growth of Ge that induces a dendritic growth in the <110> direction and suppresses the growth in the [111] direction. The growth behavior was similar to the 2D growth of silicon reported previously. Thus, it can be concluded that a DLA environment is essential for the 2D growth of cubic structured materials. The electron density and mobility of GeNSs were found to be 1.3 × 10 15 cm −3 and 792 cm 2 /Vs, respectively, and their resistivity varied with the intensity of light. [Figure not available: see fulltext.]

AB - The discovery of graphene has triggered immense interest in two-dimensional (2D) nanomaterials. However, the 2D growth of several layerstructured crystals such as graphene, MoS 2 , and black phosphorus is difficult and limited. Here, we report the gas-phase 2D growth of germanium (Ge) with a cubic structure to form Ge nanosheets (GeNSs) using the chemical vapor deposition method. Our investigation revealed that a diffusion limited aggregation (DLA) environment is essential for the 2D growth of Ge that induces a dendritic growth in the <110> direction and suppresses the growth in the [111] direction. The growth behavior was similar to the 2D growth of silicon reported previously. Thus, it can be concluded that a DLA environment is essential for the 2D growth of cubic structured materials. The electron density and mobility of GeNSs were found to be 1.3 × 10 15 cm −3 and 792 cm 2 /Vs, respectively, and their resistivity varied with the intensity of light. [Figure not available: see fulltext.]

UR - http://www.scopus.com/inward/record.url?scp=85009507877&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85009507877&partnerID=8YFLogxK

U2 - 10.1007/s13391-017-6182-x

DO - 10.1007/s13391-017-6182-x

M3 - Article

VL - 13

SP - 91

EP - 96

JO - Electronic Materials Letters

JF - Electronic Materials Letters

SN - 1738-8090

IS - 1

ER -