Two-step growth of epitaxial InP layers by metal organic chemical vapor deposition

Young Dae Cho, In Geun Lee, Sun Wook Kim, Dong Hwan Jun, In Hye Choi, Hyuk Min Kwon, Chan Soo Shin, Kyung Ho Park, Won Kyu Park, Dae Hyun Kim, Dae Hong Ko

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this study, we report experimental results on the epitaxial growth of InP layer on GaAs (001) substrate by using MOCVD. We have systematically controlled nucleation steps in order to obtain InP epitaxial layers with high crystallinity quality. The controlling parameters were flow ratio of V/III sources and thicknesses of nucleation layer for nucleation steps. We successfully improved the surface roughness and crystallinity of InP epitaxial layers on GaAs substrates.

Original languageEnglish
Pages (from-to)5168-5172
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume16
Issue number5
DOIs
Publication statusPublished - 2016 May 1

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Organic Chemicals
Metals
Growth
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Cho, Young Dae ; Lee, In Geun ; Kim, Sun Wook ; Jun, Dong Hwan ; Choi, In Hye ; Kwon, Hyuk Min ; Shin, Chan Soo ; Park, Kyung Ho ; Park, Won Kyu ; Kim, Dae Hyun ; Ko, Dae Hong. / Two-step growth of epitaxial InP layers by metal organic chemical vapor deposition. In: Journal of Nanoscience and Nanotechnology. 2016 ; Vol. 16, No. 5. pp. 5168-5172.
@article{ec19f6b73d86455ca4bb0f937c09417a,
title = "Two-step growth of epitaxial InP layers by metal organic chemical vapor deposition",
abstract = "In this study, we report experimental results on the epitaxial growth of InP layer on GaAs (001) substrate by using MOCVD. We have systematically controlled nucleation steps in order to obtain InP epitaxial layers with high crystallinity quality. The controlling parameters were flow ratio of V/III sources and thicknesses of nucleation layer for nucleation steps. We successfully improved the surface roughness and crystallinity of InP epitaxial layers on GaAs substrates.",
author = "Cho, {Young Dae} and Lee, {In Geun} and Kim, {Sun Wook} and Jun, {Dong Hwan} and Choi, {In Hye} and Kwon, {Hyuk Min} and Shin, {Chan Soo} and Park, {Kyung Ho} and Park, {Won Kyu} and Kim, {Dae Hyun} and Ko, {Dae Hong}",
year = "2016",
month = "5",
day = "1",
doi = "10.1166/jnn.2016.12262",
language = "English",
volume = "16",
pages = "5168--5172",
journal = "Journal of Nanoscience and Nanotechnology",
issn = "1533-4880",
publisher = "American Scientific Publishers",
number = "5",

}

Cho, YD, Lee, IG, Kim, SW, Jun, DH, Choi, IH, Kwon, HM, Shin, CS, Park, KH, Park, WK, Kim, DH & Ko, DH 2016, 'Two-step growth of epitaxial InP layers by metal organic chemical vapor deposition', Journal of Nanoscience and Nanotechnology, vol. 16, no. 5, pp. 5168-5172. https://doi.org/10.1166/jnn.2016.12262

Two-step growth of epitaxial InP layers by metal organic chemical vapor deposition. / Cho, Young Dae; Lee, In Geun; Kim, Sun Wook; Jun, Dong Hwan; Choi, In Hye; Kwon, Hyuk Min; Shin, Chan Soo; Park, Kyung Ho; Park, Won Kyu; Kim, Dae Hyun; Ko, Dae Hong.

In: Journal of Nanoscience and Nanotechnology, Vol. 16, No. 5, 01.05.2016, p. 5168-5172.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Two-step growth of epitaxial InP layers by metal organic chemical vapor deposition

AU - Cho, Young Dae

AU - Lee, In Geun

AU - Kim, Sun Wook

AU - Jun, Dong Hwan

AU - Choi, In Hye

AU - Kwon, Hyuk Min

AU - Shin, Chan Soo

AU - Park, Kyung Ho

AU - Park, Won Kyu

AU - Kim, Dae Hyun

AU - Ko, Dae Hong

PY - 2016/5/1

Y1 - 2016/5/1

N2 - In this study, we report experimental results on the epitaxial growth of InP layer on GaAs (001) substrate by using MOCVD. We have systematically controlled nucleation steps in order to obtain InP epitaxial layers with high crystallinity quality. The controlling parameters were flow ratio of V/III sources and thicknesses of nucleation layer for nucleation steps. We successfully improved the surface roughness and crystallinity of InP epitaxial layers on GaAs substrates.

AB - In this study, we report experimental results on the epitaxial growth of InP layer on GaAs (001) substrate by using MOCVD. We have systematically controlled nucleation steps in order to obtain InP epitaxial layers with high crystallinity quality. The controlling parameters were flow ratio of V/III sources and thicknesses of nucleation layer for nucleation steps. We successfully improved the surface roughness and crystallinity of InP epitaxial layers on GaAs substrates.

UR - http://www.scopus.com/inward/record.url?scp=84971510408&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84971510408&partnerID=8YFLogxK

U2 - 10.1166/jnn.2016.12262

DO - 10.1166/jnn.2016.12262

M3 - Article

AN - SCOPUS:84971510408

VL - 16

SP - 5168

EP - 5172

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

SN - 1533-4880

IS - 5

ER -