Ultra-highly doped Si1-xGex(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics

H. Kim, G. Glass, P. Desjardins, J. E. Greene

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Ultra-highly doped Si1-xGex(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics'. Together they form a unique fingerprint.

Chemistry

Material Science