Ultra low sheet resistance on poly silicon film by excimer laser activation

Huck Lim, Huaxing Yin, Wenxu Xianyu, Jang Yeon Kwon, Xiaoxin Zhang, Hans S. Cho, Jong Man Kim, Kyung Bae Park, Do Young Kim, Ji Sim Jung, Takashi Noguchi, Takashi Noguchi

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We found that the sheet resistance (Rs) value of phosphorus-doped poly-Si film activated by excimer laser annealing (ELA) has a strong correlation with the crystallinity in the film. At the optimum ELA condition of 10 shots and 450 mJ/cm 2, we achieved a very low Rs value of 60 ohm/sq. in poly-Si films. With laser activation, we could get much lower Rs than with conventional rapid thermal annealing (RTA), for silicon layers of the same crystallinity level. The active dopant diffusion is observed from the energy which is speculated to correspond to the near-complete-melting energy regime during laser irradiation.

Original languageEnglish
Pages (from-to)S47-S50
JournalJournal of the Korean Physical Society
Volume48
Issue numberSUPPL. 1
Publication statusPublished - 2006 Jan 1

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silicon films
excimer lasers
laser annealing
low resistance
activation
crystallinity
shot
lasers
phosphorus
melting
irradiation
annealing
energy
silicon

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Lim, H., Yin, H., Xianyu, W., Kwon, J. Y., Zhang, X., Cho, H. S., ... Noguchi, T. (2006). Ultra low sheet resistance on poly silicon film by excimer laser activation. Journal of the Korean Physical Society, 48(SUPPL. 1), S47-S50.
Lim, Huck ; Yin, Huaxing ; Xianyu, Wenxu ; Kwon, Jang Yeon ; Zhang, Xiaoxin ; Cho, Hans S. ; Kim, Jong Man ; Park, Kyung Bae ; Kim, Do Young ; Jung, Ji Sim ; Noguchi, Takashi ; Noguchi, Takashi. / Ultra low sheet resistance on poly silicon film by excimer laser activation. In: Journal of the Korean Physical Society. 2006 ; Vol. 48, No. SUPPL. 1. pp. S47-S50.
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Lim, H, Yin, H, Xianyu, W, Kwon, JY, Zhang, X, Cho, HS, Kim, JM, Park, KB, Kim, DY, Jung, JS, Noguchi, T & Noguchi, T 2006, 'Ultra low sheet resistance on poly silicon film by excimer laser activation', Journal of the Korean Physical Society, vol. 48, no. SUPPL. 1, pp. S47-S50.

Ultra low sheet resistance on poly silicon film by excimer laser activation. / Lim, Huck; Yin, Huaxing; Xianyu, Wenxu; Kwon, Jang Yeon; Zhang, Xiaoxin; Cho, Hans S.; Kim, Jong Man; Park, Kyung Bae; Kim, Do Young; Jung, Ji Sim; Noguchi, Takashi; Noguchi, Takashi.

In: Journal of the Korean Physical Society, Vol. 48, No. SUPPL. 1, 01.01.2006, p. S47-S50.

Research output: Contribution to journalArticle

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AU - Lim, Huck

AU - Yin, Huaxing

AU - Xianyu, Wenxu

AU - Kwon, Jang Yeon

AU - Zhang, Xiaoxin

AU - Cho, Hans S.

AU - Kim, Jong Man

AU - Park, Kyung Bae

AU - Kim, Do Young

AU - Jung, Ji Sim

AU - Noguchi, Takashi

AU - Noguchi, Takashi

PY - 2006/1/1

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N2 - We found that the sheet resistance (Rs) value of phosphorus-doped poly-Si film activated by excimer laser annealing (ELA) has a strong correlation with the crystallinity in the film. At the optimum ELA condition of 10 shots and 450 mJ/cm 2, we achieved a very low Rs value of 60 ohm/sq. in poly-Si films. With laser activation, we could get much lower Rs than with conventional rapid thermal annealing (RTA), for silicon layers of the same crystallinity level. The active dopant diffusion is observed from the energy which is speculated to correspond to the near-complete-melting energy regime during laser irradiation.

AB - We found that the sheet resistance (Rs) value of phosphorus-doped poly-Si film activated by excimer laser annealing (ELA) has a strong correlation with the crystallinity in the film. At the optimum ELA condition of 10 shots and 450 mJ/cm 2, we achieved a very low Rs value of 60 ohm/sq. in poly-Si films. With laser activation, we could get much lower Rs than with conventional rapid thermal annealing (RTA), for silicon layers of the same crystallinity level. The active dopant diffusion is observed from the energy which is speculated to correspond to the near-complete-melting energy regime during laser irradiation.

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Lim H, Yin H, Xianyu W, Kwon JY, Zhang X, Cho HS et al. Ultra low sheet resistance on poly silicon film by excimer laser activation. Journal of the Korean Physical Society. 2006 Jan 1;48(SUPPL. 1):S47-S50.