Abstract
In this study, we performed excimer laser activation on Phosphorus or Boron-doped a-Si (amorphous silicon) film. We've got a very low sheet resistance (Rs), Rs was 60 ohm/sq. with phosphorus doping and was 65 ohm/sq. with boron doping at each optimized laser irradiation condition. We've found Rs on activated thin film showed an unprecedented behavior in both cases, because Rs had a strong dependency on the crystallinity of the activated Si film.
| Original language | English |
|---|---|
| Pages (from-to) | 1112-1115 |
| Number of pages | 4 |
| Journal | Proceedings of International Meeting on Information Display |
| Volume | 2 |
| Publication status | Published - 2006 Dec 1 |
| Event | 5th International Meeting on Information Display - Seoul, Korea, Republic of Duration: 2005 Jul 19 → 2005 Jul 23 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
Fingerprint Dive into the research topics of 'Ultra low sheet resistance on poly silicon film by excimer laser activation'. Together they form a unique fingerprint.
Cite this
Lim, H., Yin, H., Xianyu, W., Kwon, J. Y., Zhang, X., Cho, H. S., Kim, J. M., Park, K. B., Kim, D. Y., Jung, J. S., & Noguchi, T. (2006). Ultra low sheet resistance on poly silicon film by excimer laser activation. Proceedings of International Meeting on Information Display, 2, 1112-1115.