TY - JOUR
T1 - Ultra low sheet resistance on poly silicon film by excimer laser activation
AU - Lim, Hyuck
AU - Yin, Huaxiang
AU - Xianyu, Wenxu
AU - Kwon, Jang Yeon
AU - Zhang, Xiaoxin
AU - Cho, Hans S.
AU - Kim, Jong Man
AU - Park, Kyung Bae
AU - Kim, Do Young
AU - Jung, Ji Sim
AU - Noguchi, Takashi
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2006
Y1 - 2006
N2 - In this study, we performed excimer laser activation on Phosphorus or Boron-doped a-Si (amorphous silicon) film. We've got a very low sheet resistance (Rs), Rs was 60 ohm/sq. with phosphorus doping and was 65 ohm/sq. with boron doping at each optimized laser irradiation condition. We've found Rs on activated thin film showed an unprecedented behavior in both cases, because Rs had a strong dependency on the crystallinity of the activated Si film.
AB - In this study, we performed excimer laser activation on Phosphorus or Boron-doped a-Si (amorphous silicon) film. We've got a very low sheet resistance (Rs), Rs was 60 ohm/sq. with phosphorus doping and was 65 ohm/sq. with boron doping at each optimized laser irradiation condition. We've found Rs on activated thin film showed an unprecedented behavior in both cases, because Rs had a strong dependency on the crystallinity of the activated Si film.
UR - http://www.scopus.com/inward/record.url?scp=33847373504&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33847373504&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:33847373504
VL - 2
SP - 1112
EP - 1115
JO - Proceedings of International Meeting on Information Display
JF - Proceedings of International Meeting on Information Display
SN - 1738-7558
T2 - 5th International Meeting on Information Display
Y2 - 19 July 2005 through 23 July 2005
ER -