In this study, we performed excimer laser activation on Phosphorus or Boron-doped a-Si (amorphous silicon) film. We've got a very low sheet resistance (Rs), Rs was 60 ohm/sq. with phosphorus doping and was 65 ohm/sq. with boron doping at each optimized laser irradiation condition. We've found Rs on activated thin film showed an unprecedented behavior in both cases, because Rs had a strong dependency on the crystallinity of the activated Si film.
|Number of pages||4|
|Journal||Proceedings of International Meeting on Information Display|
|Publication status||Published - 2006 Dec 1|
|Event||5th International Meeting on Information Display - Seoul, Korea, Republic of|
Duration: 2005 Jul 19 → 2005 Jul 23
All Science Journal Classification (ASJC) codes