Ultra low sheet resistance on poly silicon film by excimer laser activation

Hyuck Lim, Huaxiang Yin, Wenxu Xianyu, Jang Yeon Kwon, Xiaoxin Zhang, Hans S. Cho, Jong Man Kim, Kyung Bae Park, Do Young Kim, Ji Sim Jung, Takashi Noguchi

Research output: Contribution to journalConference article

Abstract

In this study, we performed excimer laser activation on Phosphorus or Boron-doped a-Si (amorphous silicon) film. We've got a very low sheet resistance (Rs), Rs was 60 ohm/sq. with phosphorus doping and was 65 ohm/sq. with boron doping at each optimized laser irradiation condition. We've found Rs on activated thin film showed an unprecedented behavior in both cases, because Rs had a strong dependency on the crystallinity of the activated Si film.

Original languageEnglish
Pages (from-to)1112-1115
Number of pages4
JournalProceedings of International Meeting on Information Display
Volume2
Publication statusPublished - 2006 Dec 1
Event5th International Meeting on Information Display - Seoul, Korea, Republic of
Duration: 2005 Jul 192005 Jul 23

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Lim, H., Yin, H., Xianyu, W., Kwon, J. Y., Zhang, X., Cho, H. S., Kim, J. M., Park, K. B., Kim, D. Y., Jung, J. S., & Noguchi, T. (2006). Ultra low sheet resistance on poly silicon film by excimer laser activation. Proceedings of International Meeting on Information Display, 2, 1112-1115.