Ultra low sheet resistance on poly silicon film by excimer laser activation

Hyuck Lim; Huaxiang Yin; Wenxu Xianyu; Jang Yeon Kwon; Xiaoxin Zhang; Hans S. Cho; Jong Man Kim; Kyung Bae Park; Do Young Kim; Ji Sim Jung; Takashi Noguchi

Ultra low sheet resistance on poly silicon film by excimer laser activation

Hyuck Lim, Huaxiang Yin, Wenxu Xianyu, Jang Yeon Kwon, Xiaoxin Zhang, Hans S. Cho, Jong Man Kim, Kyung Bae Park, Do Young Kim, Ji Sim Jung, Takashi Noguchi

School of Integrated Technology

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this study, we performed excimer laser activation on Phosphorus or Boron-doped a-Si (amorphous silicon) film. We've got a very low sheet resistance (Rs), Rs was 60 ohm/sq. with phosphorus doping and was 65 ohm/sq. with boron doping at each optimized laser irradiation condition. We've found Rs on activated thin film showed an unprecedented behavior in both cases, because Rs had a strong dependency on the crystallinity of the activated Si film.

Original language	English
Pages (from-to)	1112-1115
Number of pages	4
Journal	Proceedings of International Meeting on Information Display
Volume	2
Publication status	Published - 2006
Event	5th International Meeting on Information Display - Seoul, Korea, Republic of Duration: 2005 Jul 19 → 2005 Jul 23

All Science Journal Classification (ASJC) codes

Engineering(all)

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@article{212ad77be8e54ad3991dbdc501d69c7f,

title = "Ultra low sheet resistance on poly silicon film by excimer laser activation",

abstract = "In this study, we performed excimer laser activation on Phosphorus or Boron-doped a-Si (amorphous silicon) film. We've got a very low sheet resistance (Rs), Rs was 60 ohm/sq. with phosphorus doping and was 65 ohm/sq. with boron doping at each optimized laser irradiation condition. We've found Rs on activated thin film showed an unprecedented behavior in both cases, because Rs had a strong dependency on the crystallinity of the activated Si film.",

author = "Hyuck Lim and Huaxiang Yin and Wenxu Xianyu and Kwon, {Jang Yeon} and Xiaoxin Zhang and Cho, {Hans S.} and Kim, {Jong Man} and Park, {Kyung Bae} and Kim, {Do Young} and Jung, {Ji Sim} and Takashi Noguchi",

year = "2006",

language = "English",

volume = "2",

pages = "1112--1115",

journal = "Proceedings of International Meeting on Information Display",

issn = "1738-7558",

note = "5th International Meeting on Information Display ; Conference date: 19-07-2005 Through 23-07-2005",

}

Ultra low sheet resistance on poly silicon film by excimer laser activation. / Lim, Hyuck; Yin, Huaxiang; Xianyu, Wenxu; Kwon, Jang Yeon; Zhang, Xiaoxin; Cho, Hans S.; Kim, Jong Man; Park, Kyung Bae; Kim, Do Young; Jung, Ji Sim; Noguchi, Takashi.

In: Proceedings of International Meeting on Information Display, Vol. 2, 2006, p. 1112-1115.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Ultra low sheet resistance on poly silicon film by excimer laser activation

AU - Lim, Hyuck

AU - Yin, Huaxiang

AU - Xianyu, Wenxu

AU - Kwon, Jang Yeon

AU - Zhang, Xiaoxin

AU - Cho, Hans S.

AU - Kim, Jong Man

AU - Park, Kyung Bae

AU - Kim, Do Young

AU - Jung, Ji Sim

AU - Noguchi, Takashi

PY - 2006

Y1 - 2006

N2 - In this study, we performed excimer laser activation on Phosphorus or Boron-doped a-Si (amorphous silicon) film. We've got a very low sheet resistance (Rs), Rs was 60 ohm/sq. with phosphorus doping and was 65 ohm/sq. with boron doping at each optimized laser irradiation condition. We've found Rs on activated thin film showed an unprecedented behavior in both cases, because Rs had a strong dependency on the crystallinity of the activated Si film.

AB - In this study, we performed excimer laser activation on Phosphorus or Boron-doped a-Si (amorphous silicon) film. We've got a very low sheet resistance (Rs), Rs was 60 ohm/sq. with phosphorus doping and was 65 ohm/sq. with boron doping at each optimized laser irradiation condition. We've found Rs on activated thin film showed an unprecedented behavior in both cases, because Rs had a strong dependency on the crystallinity of the activated Si film.

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M3 - Conference article

AN - SCOPUS:33847373504

VL - 2

SP - 1112

EP - 1115

JO - Proceedings of International Meeting on Information Display

JF - Proceedings of International Meeting on Information Display

SN - 1738-7558

T2 - 5th International Meeting on Information Display

Y2 - 19 July 2005 through 23 July 2005

ER -

Ultra low sheet resistance on poly silicon film by excimer laser activation

Abstract

All Science Journal Classification (ASJC) codes

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